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http://dx.doi.org/10.6117/kmeps.2020.27.3.041

Effect of Co Interlayer on the Interfacial Reliability of SiNx/Co/Cu Thin Film Structure for Advanced Cu Interconnects  

Lee, Hyeonchul (JCET STATS ChipPAC Korea LTD.)
Jeong, Minsu (Amkor Technology Korea Inc.)
Kim, Gahui (School of Materials Science and Engineering, Andong National University)
Son, Kirak (School of Materials Science and Engineering, Andong National University)
Park, Young-Bae (School of Materials Science and Engineering, Andong National University)
Publication Information
Journal of the Microelectronics and Packaging Society / v.27, no.3, 2020 , pp. 41-47 More about this Journal
Abstract
The effect of Co interlayer on the interfacial reliability of SiNx/Co/Cu thin film structure for advanced Cu interconnects was systematically evaluated by using a double cantilever beam test. The interfacial adhesion energy of the SiNx/Cu thin film structure was 0.90 J/㎡. This value of the SiNx/Co/Cu thin film structure increased to 9.59 J/㎡.Measured interfacial adhesion energy of SiNx/Co/Cu structure was around 10 times higher than SiNx/Cu structure due to CoSi2 reaction layer formation at SiNx/Co interface, which was confirmed by X-ray photoelectron spectroscopy analysis. The interfacial adhesion energy of SiNx/Co/Cu structure decreased sharply after post-annealing at 200℃ for 24 h due to Co oxidation at SiNx/Co interface. Therefore, it is required to control the CoO and Co3O4 formation during the environmental storage of the SiNx/Co/Cu thin film to achieve interfacial reliability for advanced Cu interconnections.
Keywords
Cu interconnect; Co; Adhesion; Double-cantilever beam test; Post-annealing;
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