Effect of Co Interlayer on the Interfacial Reliability of SiNx/Co/Cu Thin Film Structure for Advanced Cu Interconnects |
Lee, Hyeonchul
(JCET STATS ChipPAC Korea LTD.)
Jeong, Minsu (Amkor Technology Korea Inc.) Kim, Gahui (School of Materials Science and Engineering, Andong National University) Son, Kirak (School of Materials Science and Engineering, Andong National University) Park, Young-Bae (School of Materials Science and Engineering, Andong National University) |
1 | M. H. Lin, Y. L. Lin, K. P. Chang, K. C. Su, and T. Wang, "Copper interconnect electromigration behaviors in various structures and lifetime improvement by cap/dielectric interface treatment", Microelectron. Reliab., 45, 1061 (2005). DOI |
2 | H. W. Yao, K. Y. Yiang, P. Justison, M. Rayasam, O. Aubel, and J. Poppe, "Stress migration model for Cu interconnect reliability analysis", J. Appl. Physic., 110, 073504 (2001). DOI |
3 | C. K. Hu and R. Rosenberg, "Capping Layer Effects on Electromigration in Narrow Cu Lines", AIP Conference Proceedings, 741(1), 97 (2004). |
4 | J. R. Lloyd, M. W. Lane, E. G. Liniger, C. K. Hu, T. M. Shaw, and R. Rosenberg, "Electromigration and adhesion", IEEE Transactions on Dev. & Mater. Reliab., 5(1), 113 (2005). DOI |
5 | L. D. L. S. Valladares, D. H. Salinas, A. B. Dominguez, D. A. Najarro, S. I. Khondaker, T. Mitrelias, C. H. W. Barnes, J. A. Aguiar, and Y. Majima, "Crystallization and electrical resistivity of O and CuO obtained by thermal oxidation of Cu thin films on /Si substrates", Thin Solid Films, 520, 6368 (2012). DOI |
6 | J. J. Chang, C. P. Liu, T. E. Hsieh, and Y. L. Wang, "The study of diffusion and nucleation for formation by oxidemediated cobalt silicidation", Surf. Coat. Technol., 200, 3314 (2006). DOI |
7 | A. Sharma, S. Tripathi, and T. Shripathi, "X-ray photoelectron study of annealed Co thin film on Si surface", Applied Surface Science, 256, 530 (2009). DOI |
8 | T. Nguyen, H. L. Ho, D. E. Kotecki, and T. D. Nguyen, "Reaction study of cobalt and silicon nitride", J. Mater. Res., 8(9), 2354 (1993). DOI |
9 | I. Lee, S. Kim, J. Yun, I. Park, and T. S. Kim, "Interfacial toughening of solute on processed Ag nanoparticle thin films by organic residuals", Nanotechnology, 23, 485704 (2012). DOI |
10 | T. C. Wang, Y. L. Cheng, Y. L. Wang, T. E. Hsieh, G. J. Hwang, and C. F. Chen, "Comparison of characteristics and integration of copper diffusion-barrier dielectrics", Thin Solid Films, 498, 36 (2006). DOI |
11 | J. K. Kim, H. O. Kang, W. J. Hwang, J. M. Yang, and Y. B. Park, "Effect of Post-Chemical-Mechanical Polishing Surface Treatments on the Interfacial Adhesion Energy between Cu and a Capping Layer", Jpn. J. Appl. Phys., 52, 10MC05 (2013). DOI |
12 | M. S. Jeong, J. K. Kim, H. O. Kang, W. J. Hwang, and Y. B. Park, "Effects of Wet Chemical Treatment and Thermal Cycle Conditions on the Interfacial Adhesion Energy of Cu/ thin Film Interfaces", J. Microelectric. Pack. Soc., 21(1), 45 (2014). |
13 | E. J. Jang, S. Hyun, H. J. Lee, and Y. B. Park, "Effect of Wet Pretreatment on Interfacial Adhesion Energy of Cu-Cu Thermocompression Bond for 3D IC Packages", J. Electron. Mater., 38(12), 2449 (2009). DOI |
14 | D. Priyadarshini, S. Nguyen, H. Shobha, S. Cohen, T. Shaw, E. Liniger, C. K. Hu, C. Parks, E. Adams, J. Burnham, A. H. Simon, G. Bonilla, A. Grill, D. Canaperi, D. Edelstein, D. Collins, M. Balseanu, M. Stolfi, and J. Ren, K. Shah, "Advanced metal and dielectric barrier cap films for Cu low k interconnects", Proc. IEEE International interconnect Technology Conference Advanced Metallization Conference, San Jose, CA, USA, 185 (2014). |
15 | C. C. Yang, P. Flaitz, B. Li, F. Chen, C. Christiansen, S. Y. Lee, P. Ma, and D. Edelstein, "Co capping layer Cu/low-k interconnect", Microelectronic Enginnering, 92, 79 (2012). DOI |
16 | C. C. Yang, B. Li, H. Shobha, S. Nguyen, A. Grill, W. Ye, J. AuBuchon, M. Shek, and D. Edelstein, "In Situ Co/SiC(N,H) Capping Layers for Cu/Low-k Interconnects", Electron. Dev. Lett., 33(4), 588 (2012). DOI |
17 | M. W. Lane, E. G. Liniger, and J. R. Lloyd, "Relationship between interfacial adhesion and electromigration in Cu metallization", J. Appl. Phys., 98, 1417 (2003). |
18 | M. Lane, "Interface fracture", Annu. Rev. Mater. Res., 33, 29 (2003). DOI |
19 | H. H. Kim, W. Han, H. S. Lee, B. G. Min, and B. J. Kim, "Preparation and characterization of silicon nitride (Si N)-coatedcarbon fibers and their effects on thermal properties in composites", Materials Science and Engineering: B, 200, 132 (2015). DOI |
20 | S. I. Raider, R. Flitsch, J. A. Aboaf, and W. A. Pliskin, "Surface Oxidation of Silicon Nitride Film", J. Electrochem. Soc., 123(4), 560 (1976). DOI |
21 | I. Platzman, R. Brener, H. Haick, and R. Tannenbaum, "Oxidation of Polycrystalline Copper Thin Films at Ambient Conditions", J. Phys. Chem., C112, 1101 (2008). |