• Title/Summary/Keyword: fullCMOS

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Design of a Full-Wave Rectifier with Vibration Detector for Energy Harvesting Applications (에너지 하베스팅 응용을 위한 진동 감지기가 있는 전파정류 회로 설계)

  • Ka, Hak-Jin;Yu, Chong-Gun
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2017.10a
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    • pp.421-424
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    • 2017
  • This paper describes a full-wave rectifiers for energy harvesting circuit using vibration detector. The designed circuit operates only when the vibration is detected through the vibration detector and the active diode. When there is no vibration, the comparator is turned off to prevent leakage of energy stored in the $C_{STO}$. The energy stored in the capacitor is used to drive the level converter and the active diode. The energy stored in the capacitor is supplied to an active diode designed as an output power. The vibration detector is implemented with Schmitt Trigger and Peak Detector with Hysteresis function. The proposed circuit is designed in a CMOS 0.35um technology and its functionality has been verified through extensive simulations. The designed chip occupies $590{\mu}m{\times}583{\mu}m$.

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Design of an Energy Harvesting Full-Wave Rectifier Using High-Performance Comparator (고성능 비교기를 이용한 에너지 하베스팅 전파정류회로 설계)

  • Lee, Dong-Jun;Yu, Chong-Gun
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2017.10a
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    • pp.429-432
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    • 2017
  • In this paper, a full - wave rectifying harvesting circuit with a high-performance comparator is designed. Designed circuits are divided into Negative Voltage Converter and Active Diode stages. The comparator included in the active diode stage is implemented as a 3-stage type and divided into pre-amplification, decision circuit, and output buffer stages. The main purpose of this comparator is to reduce the propagation delay and improve the voltage and power efficiency of the harvesting circuit. The proposed circuit is designed with magna $0.35{\mu}m$ CMOS process and its operation is verified by simulation. The chip area of the designed energy harvesting circuit is $900{\mu}m{\times}712{\mu}m$.

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Design of Efficient 8bit CMOS AD Converter for SOC Application (SOC 응용을 위한 효율적인 8비트 CMOS AD 변환기 설계)

  • Kwon, Seung-Tag
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.12
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    • pp.22-28
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    • 2008
  • This paper designed a efficient 8-bit CMOS analog-to-digital converter(ADC) for an SOC(System On Chip) application. The architecture consists of two modified 4-bit full-flash ADCs, it has been designed using a more efficient architecture. This is to predict roughly the range in which input signal residers and can be placed in the proximity of input signal based on initial prediction. The prediction of input signal is made available by introducing a voltage estimator. For 4-bit resolution, the modified full-flash ADC need only 6 comparators. So a 8-bit ADC require only 12 comparators and 32 resistors. The speed of this ADC is almost similar to conventional full-flash ADC, but the die area consumption is much less due to reduce numbers of comparators and registors. This architecture uses even fewer comparator than half-flash ADC. The circuits which are implemented in this paper is simulated with LT SPICE tool of computer.

Analysis and Optimization of the CMOS Transistors for RF Applications with Various Channel Width and Length (CMOS 트랜지스터의 채널 폭 및 길이 변화에 따른 RF 특성분석 및 최적화)

  • Choi, Jeong-Ki;Lee, Sang-Gug;Song, Won-Chul
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.8
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    • pp.9-16
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    • 2000
  • MOS transistors are fabricated and evaluated for RF IC applications such as mobile communication systems using 0.35m CMOS process. Characteristics of MOSFETs are analyzed at various channel length, width and bias conditions. From the analysis, cut-off frequency ($f_T$) is independent on channel width but maximum oscillation frequency ($f_{max}$) tends to derease as the channel width increases. As channel length increases, $f_T$ and fmax decrease. $f_T$ is 22GHz and fmax is 28GHz at its maximum value. High frequency noise performance is improved with larger channel width and smaller channel length at same bias conditions. NFmin at 2GHz is 0.45dB as a minimum value. From the evaluation, MOSFETs designed using 0.35m CMOS process demonstrated a full potential for the commercial RF ICs for mobile communication systems near 2GHz. And optimization methods of the CMOS transistors for RF applications are presented in this paper.

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Design and Implementation of a RFID Transponder Chip using CMOS Process (CMOS 공정을 이용한 무선인식 송수신 집적회로의 설계 및 제작)

  • 신봉조;박근형
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.10
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    • pp.881-886
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    • 2003
  • This paper describes the design and implementation of a passive transponder chip for RFID applications. Passive transponders do not have their own power supply, and therefore all power required for the operation of a passive transponder must be drawn from the field of the reader. The designed transponder consists of a full wave rectifier to generate a dc supply voltage, a 128-bit mask ROM to store the information, and Manchester coding and load modulation circuits to be used for transmitting the information from the transponder to the reader. The transponder with a size 410 x 900 ${\mu}$m$^2$ has been fabricated using 0.65 ${\mu}$m 2-poly, 2-metal CMOS process. The measurement results show the data transmission rate of 3.9 kbps at RF frequency 125 kHz.

Clinical comparison of intraoral CMOS and PSP detectors in terms of time efficiency, patient comfort, and subjective image quality

  • Kamburoglu, Kivanc;Samunahmetoglu, Ercin;Eratam, Nejlan;Sonmez, Gul;Karahan, Sevilay
    • Imaging Science in Dentistry
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    • v.52 no.1
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    • pp.93-101
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    • 2022
  • Purpose: This study compared the effectiveness of complementary metal-oxide semiconductors (CMOS) and photostimulable phosphor (PSP) plates as intraoral imaging systems in terms of time efficacy, patient comfort, and subjective image quality assessment in real clinical settings. Materials and Methods: Fifty-eight patients (25 women and 33 men) were included. Patients were referred for a full-mouth radiological examination including 1 bitewing radiograph (left and right) and 8 periapical radiographs for each side (left maxilla/mandible and right maxilla/mandible). For each patient, 1 side of the dental arch was radiographed using a CMOS detector, whereas the other side was radiographed using a PSP detector, ensuring an equal number of left and right arches imaged by each detector. Clinical application time, comfort/pain, and subjective image quality were assessed for each detector. Continuous variables were summarized as mean±standard deviation. Differences between detectors were evaluated using repeated-measures analysis of variance. P<0.05 was accepted as significant. Results: The mean total time required for all imaging procedures with the CMOS detector was significantly lower than the mean total time required for imaging procedures with PSP (P<0.05). The overall mean patient comfort scores for the CMOS and PSP detectors were 4.57 and 4.48, respectively, without a statistically significant difference (P>0.05). The performance of both observers in subjectively assessing structures was significantly higher when using CMOS images than when using PSP images for all regions (P<0.05). Conclusion: The CMOS detector was found to be superior to the PSP detector in terms of clinical time efficacy and subjective image quality.

A Selective Current-supplying Parallel A/D Converter (선택적 전류공급구조를 갖는 병렬형 A/D 변환기)

  • Yang, Jung-Wook;Kim, Ook;Kim, Won-Chan
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.18 no.12
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    • pp.1983-1993
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    • 1993
  • A power-reduction technique for full-flash A/D converters is proposed. As the resolution of a full-flash A/D converter increases linearly, the number of comparators increases exponentially. The power dissipation is generally larger than other A/D converter architectures because there are many comparators, and they are operating continuously. In this proposed architecture, only a selected number of conmarators are made to operate instead of activating all the comparators of the full-flash A/D convertor. To determine whichcomparators should be activated, voltage levelfider circuits are used. A new clock driver is developed to suppress the dynamic glitch noise which is fed back into the input stage of the comparator. By using this clock driver, the glitch noise in the current source is reduced to one fourth of that when the typical clock signal is applied. The proposed architecture has been implemented with 1.2 m 5GHz BiCMOS technology. The maximum conversion speed is 350Msamples/s. and dissipates only 900mW.

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Design and Optimization of Full Comparator Based on Quantum-Dot Cellular Automata

  • Hayati, Mohsen;Rezaei, Abbas
    • ETRI Journal
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    • v.34 no.2
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    • pp.284-287
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    • 2012
  • Quantum-dot cellular automata (QCA) is one of the few alternative computing platforms that has the potential to be a promising technology because of higher speed, smaller size, and lower power consumption in comparison with CMOS technology. This letter proposes an optimized full comparator for implementation in QCA. The proposed design is compared with previous works in terms of complexity, area, and delay. In comparison with the best previous full comparator, our design has 64% and 85% improvement in cell count and area, respectively. Also, it is implemented with only one clock cycle. The obtained results show that our full comparator is more efficient in terms of cell count, complexity, area, and delay compared to the previous designs. Therefore, this structure can be simply used in designing QCA-based circuits.

A Low Power Analog CMOS Vision Chip for Edge Detection Using Electronic Switches

  • Kim, Jung-Hwan;Kong, Jae-Sung;Suh, Sung-Ho;Lee, Min-Ho;Shin, Jang-Kyoo;Park, Hong-Bae;Choi, Chang-Auck
    • ETRI Journal
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    • v.27 no.5
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    • pp.539-544
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    • 2005
  • An analog CMOS vision chip for edge detection with power consumption below 20mW was designed by adopting electronic switches. An electronic switch separates the edge detection circuit into two parts; one is a logarithmic compression photocircuit, the other is a signal processing circuit for edge detection. The electronic switch controls the connection between the two circuits. When the electronic switch is OFF, it can intercept the current flow through the signal processing circuit and restrict the magnitude of the current flow below several hundred nA. The estimated power consumption of the chip, with $128{\times}128$ pixels, was below 20mW. The vision chip was designed using $0.25{\mu}m$ 1-poly 5-metal standard full custom CMOS process technology.

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A CMOS Cell Driver Model to Capture the Effects of Coupling Capacitances (결합 커패시턴스의 영향을 고려한 CMOS 셀 구동 모델)

  • Cho, Kyeong-Soon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.11
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    • pp.41-48
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    • 2005
  • The crosstalk effects that can be observed in the very dee submicron semiconductor chips are due to the coupling capacitances between interconnect lines. The accuracy of the full-chip timing analysis is determined by the accuracy of the estimated propagation delays of cells and interconnects within the chip. This paper presents a CMOS cell driver model and delay calculation algerian capturing the crosstalk effects due to the coupling capacitances. The proposed model and algorithm were implemented in a delay calculation program and used to estimate the propagation delays of the benchmark circuits extracted from a chip layout. We observed that the average discrepancy from HSPICE simulation results is within $1\%$ for the circuits with a victim affected by $0\~10$ aggressors.