• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.554-562
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• 2015

This paper presents the design and analysis of gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor (FinFET). The three-dimensional (3-D) technology computer-aided design (TCAD) simulations were performed to analyze the direct-current (DC) and radio-frequency (RF) characteristics for AlGaN/GaN FinFETs. The fin width ($W_{fin}$) and the height of GaN layer ($H_{GaN}$) are the design parameters used to improve the electrical performances of gate-recessed AlGaN/GaN FinFET.

• Journal of Electrical Engineering and Technology
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• v.8 no.6
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• pp.1497-1502
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• 2013

Recently, the junctionless (JL) transistors realized by a single-type doping process have attracted attention instead of the conventional metal-oxide-semiconductor field-effect transistors (MOSFET). The JL transistor can overcome MOSFET's problems such as the thermal budget and short-channel effect. Thus, the JL transistor is considered as great alternative device for a next generation low standby power silicon system. In this paper, the JL FinFET was simulated with a three dimensional (3D) technology computer-aided design (TCAD) simulator and optimized for DC characteristics according to device dimension and doping concentration. The design variables were the fin width ($W_{fin}$), fin height ($H_{fin}$), and doping concentration ($D_{ch}$). After the optimization of DC characteristics, RF characteristics of JL FinFET were also extracted.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.508-517
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• 2014

We design and analyze the n-channel junctionless fin-shaped field-effect transistor (JL FinFET) with 10-nm gate length and compare its performances with those of the conventional bulk-type fin-shaped FET (conventional bulk FinFET). A three-dimensional (3-D) device simulations were performed to optimize the device design parameters including the width ($W_{fin}$) and height ($H_{fin}$) of the fin as well as the channel doping concentration ($N_{ch}$). Based on the design optimization, the two devices were compared in terms of direct-current (DC) and radio-frequency (RF) characteristics. The results reveal that the JL FinFET has better subthreshold swing, and more effectively suppresses short-channel effects (SCEs) than the conventional bulk FinFET.

• IEIE Transactions on Smart Processing and Computing
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• v.5 no.1
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• pp.10-16
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• 2016

In this paper, a design for a fully digital voltage sensor using a 32-nm fin-type field-effect transistor (FinFET) is presented. A new characteristic of the double gate p-type FinFET (p-FinFET) is examined and proven appropriate for sensing voltage variations. On the basis of this characteristic, a novel technique for designing low-power voltage-to-time converters is presented. Then, we develop a digital voltage sensor with a voltage range of 0.7 to 1.1V at a 50-mV resolution. The performance of the proposed sensor is evaluated under a range of voltages and process variations using Simulation Program with Integrated Circuit Emphasis (SPICE) simulations, and the sensor is proven capable of operating under ultra-low power consumption, high linearity, and fairly high-frequency conditions (i.e., 100 MHz).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.133-134
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• 2006

A simple doping method to fabricate a very thin channel body of the n-type fin field-effect-transistor (FinFET) with a 20 nm gate length by solid-phase-diffusion (SPD) process is presented. Using As-doped spin-on-glass as a diffusion source of arsenic and the rapid thermal annealing, the n-type source-drain extensions with a three-dimensional structure of the FinFET devices were doped. The junction properties of arsenic doped regions were investigated by using the $n^+$-p junction diodes which showed excellent electrical characteristics. Single channel and multi-channel n-type FinFET devices with a gate length of 20-100 nm was fabricated by As-SPD and revealed superior device scalability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.5
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• pp.394-398
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• 2007

A simple doping method to fabricate a very thin channel body of the nano-scaled n-type fin field-effect-transistor (FinFET) by arsenic solid-Phase-diffusion (SPD) process is presented. Using the As-doped spin-on-glass films and the rapid thermal annealing for shallow junction, the n-type source-drain extensions with a three-dimensional structure of the FinFET devices were doped. The junction properties of arsenic doped regions were investigated by using the $n^+$-p junction diodes which showed excellent electrical characteristics. The n-type FinFET devices with a gate length of 20-100 nm were fabricated by As-SPD and revealed superior device scalability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.3
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• pp.169-172
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• 2020

In this paper, the effect of hot carrier injection on an n-bulk fin field-effect transistor (FinFET) is analyzed. The hot carrier injection method is applied to determine the performance change after injection in two ways, channel hot electron (CHE) and drain avalanche hot carrier (DAHC), which have the greatest effect at room temperature. The optimum condition for CHE injection is V_G=V_D, and the optimal condition for DAHC injection can be indirectly confirmed by measuring the peak value of the substrate current. Deterioration by DAHC injection affects not only hot electrons formed by impact ionization, but also hot holes, which has a greater impact on reliability than CHE. Further, we test the amount of drain voltage that can be withstood, and extracted the lifetime of the device. Under CHE injection conditions, the drain voltage was able to maintain a lifetime of more than 10 years at a maximum of 1.25 V, while DAHC was able to achieve a lifetime exceeding 10 years at a 1.05-V drain voltage, which is 0.2 V lower than that of CHE injection conditions.