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http://dx.doi.org/10.5573/JSTS.2015.15.5.554

Design and Analysis of Gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor  

Jang, Young In (School of Electronics Engineering, Kyungpook National University)
Seo, Jae Hwa (School of Electronics Engineering, Kyungpook National University)
Yoon, Young Jun (School of Electronics Engineering, Kyungpook National University)
Eun, Hye Rim (School of Electronics Engineering, Kyungpook National University)
Kwon, Ra Hee (School of Electronics Engineering, Kyungpook National University)
Lee, Jung-Hee (School of Electronics Engineering, Kyungpook National University)
Kwon, Hyuck-In (School of Electrical and Electronics engineering, Chung-Ang University)
Kang, In Man (School of Electronics Engineering, Kyungpook National University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.15, no.5, 2015 , pp. 554-562 More about this Journal
Abstract
This paper presents the design and analysis of gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor (FinFET). The three-dimensional (3-D) technology computer-aided design (TCAD) simulations were performed to analyze the direct-current (DC) and radio-frequency (RF) characteristics for AlGaN/GaN FinFETs. The fin width ($W_{fin}$) and the height of GaN layer ($H_{GaN}$) are the design parameters used to improve the electrical performances of gate-recessed AlGaN/GaN FinFET.
Keywords
AlGaN/GaN; recessed gate; fin-type field-effect transistor (FinFET); 3-D TCAD;
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