[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.4313/JKEM.2007.20.5.394

Fabrication of SOI FinFET Devices using Arsenic Solid-phase-diffusion

Cho, Won-Ju (Department of Electronic Materials Engineering, Kwangwoon University)
Koo, Hyun-Mo (Department of Electronic Materials Engineering, Kwangwoon University)
Lee, Woo-Hyun (Department of Electronic Materials Engineering, Kwangwoon University)
Koo, Sang-Mo (Department of Electronic Materials Engineering, Kwangwoon University)
Chung, Hong-Bay (Department of Electronic Materials Engineering, Kwangwoon University)

Publication Information

Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.20, no.5, 2007 , pp. 394-398 More about this Journal

Abstract

A simple doping method to fabricate a very thin channel body of the nano-scaled n-type fin field-effect-transistor (FinFET) by arsenic solid-Phase-diffusion (SPD) process is presented. Using the As-doped spin-on-glass films and the rapid thermal annealing for shallow junction, the n-type source-drain extensions with a three-dimensional structure of the FinFET devices were doped. The junction properties of arsenic doped regions were investigated by using the $n^+$ -p junction diodes which showed excellent electrical characteristics. The n-type FinFET devices with a gate length of 20-100 nm were fabricated by As-SPD and revealed superior device scalability.

Keywords

Solid phase diffusion; Ultra-shallow junction; Nano-scale; FinFET; As-doped spin-on-glass;

Citations & Related Records

Reference

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