• Proceedings of the Korean Geotechical Society Conference
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• 2006.03a
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• pp.1187-1194
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• 2006

This study analyzed characteristics of soft ground consolidation according to depths of vertical drain. As the result, when the depth ratio of vertical drains (L/D) were 0.5, 0.7, and 1.0, consolidation characteristics were similar up to 70% in consolidation degree under one-dimensional drain condition. However, above this degree, consolidation speed became slower as L/D became smaller. Two-dimensional drain condition also showed a similar tendency, but when L/D was 1.0, the consolidation speed was relatively higher.

• Electrical & Electronic Materials
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• v.9 no.6
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• pp.558-563
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• 1996

We fabricated high voltage hydrogenerated amorphous silicon thin film transistors (a Si:H HVTFT) and investigated its temperature dependent characteristics of from 303 K to 363 K. The results show that the drain current was decreased at low gate voltage and increased at high gate voltage exponentially. According to the increasing the thickness of a Si layer, drain current increased. Difference of drain current at 363 K was increasd at the lower gate voltage and decreased at the higher gate voltage. When the drain and gate voltage of 100 V applied, the drain current increased linearly with rise temperature.

• Journal of Chest Surgery
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• v.46 no.3
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• pp.223-225
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• 2013

Chest draining is a common procedure for treating pleural effusion. Perforation of the heart is a rare often fatal complication of chest drain insertion. We report a case of a 76-year-old female patient suffering from congestive heart failure. At presentation, unilateral opacity of the left chest observed on a chest X-ray was interpreted as massive pleural effusion, so an attempt was made to drain the left pleural space. Malposition of the chest drain was suspected because blood was draining in a pulsatile way from the catheter. Computed tomography revealed perforation of the left ventricle. Mini-thoracotomy was performed and the drain extracted successfully.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.2
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• pp.110-116
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• 2009

The prominent advantages of Dual Material Surrounding Gate (DMSG) MOSFETs are higher speed, higher current drive, lower power consumption, enhanced short channel immunity and increased packing density, thus promising new opportunities for scaling and advanced design. In this Paper, we present Transconductance-to-drain current ratio and electric field distribution model for dual material surrounding gate (DMSGTs) MOSFETs. Transconductance-to-drain current ratio is a better criterion to access the performance of a device than the transconductance. This proposed model offers the basic designing guidance for dual material surrounding gate MOSFETs.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.2
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• pp.235-238
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• 2008

This paper explores 28 nm MOSFET design for LSTP(Low Standby Power) applications using TCAD(Technology Computer Aided Design) simulation. Simulated results show that the leakage current of the MOSFET is increasingly dominated by GIDL(Gate Induced Drain Leakage) instead of a subthreshold leakage as the Source/Drain extension doping increases. The GIDL current can be reduced by grading lateral abruptness of the drain at the expense of a higher Source/Drain series resistance. For 28 nm MOSFET suggested in ITRS, we have shown Source/Drain design becomes even more critical to meet both leakage current and performance requirement.

• Proceedings of the Korean Geotechical Society Conference
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• 2009.03a
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• pp.743-749
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• 2009

In this study, the field test for suction drain method which does not require a surcharge load and a sealing sheet was performed at west seashore's site constructed by the dredged and reclaimed clay. The improvements of soft ground by suction drain method was analyzed by the results of real-time field measurement, SPT(Standard Penetration Test) and laboratory tests. The results indicated that the soft ground improvement is effective the vertical drain method used with vacuum pressure rather than surcharge load with considering settlements, dissipation of pore water pressure and shear strength.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.303-306
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• 2005

We report the self-aligned low temperature poly silicon (LTPS) TFT process using simple doping process. In conventional LTPS-TFT, the Lightly Doped Drain (LDD) doping and source/drain doping are processed separately by aligning the gate with the source and drain during the gate lithography step. This ne w process not only fabricates fully self-aligned low temperature poly silicon TFTs with symmetric LDD structure but also simplifies the process flow with combined source/drain doping and LDD doping in one step. LDD doping process can be achieved using only source/drain doping process according to the new structure. In this paper, the TFT characteristics of NMOS and PMOS using the new doping process will be discussed.

• Structural Engineering and Mechanics
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• v.3 no.5
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• pp.429-443
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• 1995

The deformational response of plastic board drains installed to accelerate consolidation of soft soils, is examined as a problem of downdrag. The drain is modelled as a beam-column in which the axial load increases nonlinearly with depth. The soil response is represented by the Winkler medium whose coefficient of subgrade modulus increases linearly with depth. The governing equations for the drain-soil system are derived and solved as an eigenvalue problem. The critical buckling loads and the shape of the drain are obtained as functions of the normalized subgrade modulus of the soil at the top, the parameters signifying the variation of axial load along the length of the drain and the increase of subgrade modulus with depth. The derived deformed shapes of the drain are consistent with the observed ones.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.579-580
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• 2006

Simple nonoverlapped source/drain-to-gate MOSFETs to suppress GIDL (gate-induced drain leakage) is simulated with SILVACO simulation tool. Changing spacer thickness for adjusting length of Drain to Gate nonoverlapped region, this simulation observes on/off characteristic of nonoverlapped source/drain-to-gate MOSFETs. Off current is dramatically decreased with S/D to gate nonoverlapped length increasing. The result shows that maximum on/off current ratio is achieved by adjusting nonoverlapped length.

• Proceedings of the Korean Geotechical Society Conference
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• 2002.10a
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• pp.529-536
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• 2002

The purpose of this paper os to present and discuss some of flow and drain observed in modelling results. Because dredged fill ground of Yul-Chon located in the south coast of Korea is very soft, this ground should be improved after operation of surface stabilization. There are surface stabilization method such as chemical stabilization, desiccation, horizontally vacuum drain, replacement, and geosynthetics. In Yul-Chon, PTM(Progressive Trenching Method) is adopted to provide the necessity condition of surface desiccation. In the case trench in the dredged soft ground is formed by PTM equipment, pore water in the ground is drained through trench. There, drain and desiccation of surface ground increase, and bearing capacity is improved. In this research, when trench in the dredged soft ground is formed by PTM equipment, permeable characteristics and drain efficiency of pore-water are analyzed using SEEP/W software package. Results show variation of total head, pressure head, flux, hydraulic gradient, and flow quantity.