• ETRI Journal
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• v.25 no.3
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• pp.195-202
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• 2003

This paper proposes a new LDMOSFET structure with a trenched sinker for high-power RF amplifiers. Using a low-temperature, deep-trench technology, we succeeded in drastically shrinking the sinker area to one-third the size of the conventional diffusion-type structure. The RF performance of the proposed device with a channel width of 5 mm showed a small signal gain of 16.5 dB and a maximum peak power of 32 dBm with a power-added efficiency of 25% at 2 GHz. Furthermore, the trench sinker, which was applied to the guard ring to suppress coupling between inductors, showed an excellent blocking performance below -40 dB at a frequency of up to 20 GHz. These results confirm that the proposed trenched sinker should be an effective technology both as a compact sinker for RF power devices and as a guard ring against coupling.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.66-74
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• 2012

In this paper, the impact of segregation layer density ($N_{DSL}$) and length ($L_{DSL}$) on scalability and analog/RF performance of dopant-segregated Schottky barrier (DSSB) SOI MOSFET has been investigated in sub-30 nm regime. It has been found that, although by increasing the $N_{DSL}$ the increased off-state leakage, short-channel effects and the parasitic capacitances limits the scalability, the reduced Schottky barrier width at source-to-channel interface improves the analog/RF figures of merit of this device. Moreover, although by reducing the $L_{DSL}$ the increased voltage drop across the underlap length reduces the drive current, the increased effective channel length improves the scalability of this device. Further, the gain-bandwidth product in a common-source amplifier based on optimized DSSB SOI MOSFET has improved by ~40% over an amplifier based on raised source/drain ultrathin-body SOI MOSFET. Thus, optimizing $N_{DSL}$ and $L_{DSL}$ of DSSB SOI MOSFET makes it a suitable candidate for future nanoscale analog/RF circuits.

• ETRI Journal
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• v.41 no.4
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• pp.536-548
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• 2019

In this study, an electronically steerable parasitic array radiator (ESPAR) antenna via analog radio frequency (RF) switches for a single RF chain MIMO system is presented. The proposed antenna elements are spaced at ${\lambda}/64$, and the antenna size is miniaturized via a dielectric radome. The optimum reactance load value is calculated via the beamforming load search algorithm. A switch simplifies the design and implementation of the reactance loads and does not require additional complex antenna matching circuits. The measured impedance bandwidth of the proposed ESPAR antenna is 1,500 MHz (1.75 GHz-3.25 GHz). The proposed antenna exhibits a beam pattern that is reconfigurable at 2.48 GHz due to changes in the reactance value, and the measured peak antenna gain is 4.8 dBi. The reception performance is measured by using a $4{\times}4$ BPSK signal. The measured average SNR is 17 dB when using the proposed ESPAR antenna as a transmitter, and the average SNR is 16.7 dB when using a four-conventional monopole antenna.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.52 no.11
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• pp.657-661
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• 2003

In this paper, we designed a portable digital pressure algometer which not only can measure the pain level objectively and quantitatively, but also is able to do RF communication. This system consists of pressure sensor for pain measurement, analog signal analysis, digital hardware based on PIC16C73B, RF communication and display. To evaluate the performance of the developed system, we measured pressure threshold using commercial analog PA(Pressure Algometer) and the proposed system, and then evaluated the correlation and confidence. Using linear regression analysis, standard deviation of 0.1731 and R-square value of 99.3% were obtained. In conclusion, the above results showed good performance and its usability in measuring the pain clinically.

• Journal of Broadcast Engineering
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• v.21 no.5
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• pp.803-815
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• 2016

In this paper, we design a direct radio frequency (RF) sampling receiver for multiband GNSS signals and demonstrate its performance. The direct RF sampling is a technique that does not use an analog mixer, but samples the passband signal directly, and all receiver processes are done in digital domain, whereas the conventional intermediate frequency (IF) receiver samples the IF band signals. In contrast to the IF sampling receiver, the RF sampling receiver is less complex in hardware, reconfigurable, and simultaneously converts multiband signals to digital signals with an analog-to-digital (AD) converter. The reconfigurability and simultaneous reception are very important in military applications where rapid change to other system is needed when a system is jammed by an enemy. For simultaneous reception of multiband signals, the sampling frequency should be selected with caution by considering the carrier frequencies, bandwidths, desired intermediate frequencies, and guard bands. In this paper, we select a sampling frequency and design a direct RF sampling receiver to receive multiband global navigation satellite system (GNSS) signals such as GPS L1, GLONASS G1 and G2 signals. The receiver is implemented with a commercial AD converter and software. The receiver performance is demonstrated by receiving the real signals.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.5
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• pp.501-509
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• 2011

Software defined radio(SDR) has a goal that places the analog-to-digital converter(ADC) as near the antenna as possible. But current technique actually can't do analog-to-digital converting about RF band signals. So one method is studying that samples RF band signals to IF band. One of the ways Sub-Sampling technique can convert signals from RF band to IF band without oscillator. If Sub-Sampling technique is used, over 2 bands can convert signals from RF band to IF band. But due to the filter performance in RF band, it is possible to generate interference between signals that is converted in low frequency band. The effect degrades performance. In this paper, we propose one method that uses time division multiplexing(TDM) method as a solution to avoid interference between signals. By doing TDM and Sub-Sampling at the same time that method can get signals without large changes of structures.

• ETRI Journal
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• v.21 no.4
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• pp.1-8
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• 1999

Thick metal 0.8${\mu}m$ CMOS technology on high resistivity substrate(RF CMOS technology) is demonstrated for the L-band RF IC applications, and we successfully implemented it to the monolithic 900 MHz and 1.9 GHz CMOS LNAs for the first time. To enhance the performance of the RF circuits, MOSFET layout was optimized for high frequency operation and inductor quality was improved by modifying the technology. The fabricated 1.9 GHz LNA shows a gain of 15.2 dB and a NF of 2.8 dB at DC consumption current of 15mA that is an excellent noise performance compared with the offchip matched 1.9 GHz CMOS LNAs. The 900 MHz LNA shows a high gain of 19 dB and NF of 3.2 dB despite of the performance degradation due to the integrating of a 26 nH inductor for input match. The proposed RF CMOS technology is a compatibel process for analog CMOS ICs, and the monolithic LNAs employing the technology show a good and uniform RF performance in a five inch wafer.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.3
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• pp.277-283
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• 2016

In this paper, a system of self-interference signal cancelation for in-band full duplex has been implemented and tested in RF/analog region. The system performance has been evaluated with NI5791 platform and NI Flex RIO. Due to the low power level of the NI5791, the RF signal is amplified by SKYWORKS SE2565T power amplifier. A circulator is used to feed the antenna both the transmitter and receiver. The RF FIR filter is designed by twelve delay taps in two different groups, and the interval between each delay tap is designed to have 100 ps. The amplified signal is distributed to antenna and the FIR filter by use of a 10 dB directional coupler. The tap coefficients of the RF FIR filter are tuned to estimate the self-interference signal coming from antenna reflection and the leakage of the circulator, and the self-interference signal is subtracted. The system is test with 802.11a/g 20 MHz OFMD at 2.56 GHz, and the output power of the amplifier of 0 dBm. The self-interference signal is canceled out by 53 dB.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.83-87
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• 2023

In the field of electronics and semiconductor technology, innovative semiconductor material research to replace Si is actively ongoing. However, while research on alternative materials is underway, there is a significant lack of studies regarding the relationship between 2D materials used as channels in transistors, especially parasitic resistance, and RF (radio frequency) applications. This study systematically analyzes the impact on electrical performance with a focus on various transistor structures to address this gap. The research results confirm that access resistance and contact resistance act as major factors contributing to the degradation of semiconductor device performance, particularly when highly scaled down. As the demand for high-frequency RF components continues to grow, establishing guidelines for optimizing component structures and elements to achieve desired RF performance is crucial. This study aims to contribute to this goal by providing structural guidelines that can aid in the design and development of next-generation RF transistors using 2D materials as channels.

• 전자공학회논문지 IE
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• v.44 no.2
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• pp.1-7
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• 2007

The increasing high frequency capabilities of CMOS have resulted in increased RF and analog design in CMOS. Design of RF and analog circuits depends critically on device S-parameter characteristics, magnitude of real and imaginary components and their behavior as a function of frequency. Utilization of scaled high performance CMOS technologies poses challenges as concerns for reliability degradation mechanisms increase. It is important to understand and quantify the effects of the reliability degradation mechanisms on the S-parameters and in turn on small signal model parameters. Various physical effects influencing small-signal parameters, especially the transconductance and capacitances and their degradation dependence, are discussed in detail. The measured S-parameters of H-gate and T-gate devices in a frequency range from 0.5GHz to 40GHz. All intrinsic and extrinsic parameters are extracted from S-parameters measurements at a single bias point in saturation. In this paper we discuss the analysis of the small signal equivalent circuits of RF SOI MOSFET's verificated for the purpose of exacting the change of parameter of small signal equivalent model followed by device flame.