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Small signal model and parameter extraction of SOI MOSFET's  

Lee, Byung-Jin (Dept. of Electronic Engineering, Univ. of Incheon)
Park, Sung-Wook (Dept. of Info. & Communications, Yuhan College)
Ohm, Woo-Yong (Dept. of Dig. Elec. & Info. Inha Tech. College)
Publication Information
전자공학회논문지 IE / v.44, no.2, 2007 , pp. 1-7 More about this Journal
Abstract
The increasing high frequency capabilities of CMOS have resulted in increased RF and analog design in CMOS. Design of RF and analog circuits depends critically on device S-parameter characteristics, magnitude of real and imaginary components and their behavior as a function of frequency. Utilization of scaled high performance CMOS technologies poses challenges as concerns for reliability degradation mechanisms increase. It is important to understand and quantify the effects of the reliability degradation mechanisms on the S-parameters and in turn on small signal model parameters. Various physical effects influencing small-signal parameters, especially the transconductance and capacitances and their degradation dependence, are discussed in detail. The measured S-parameters of H-gate and T-gate devices in a frequency range from 0.5GHz to 40GHz. All intrinsic and extrinsic parameters are extracted from S-parameters measurements at a single bias point in saturation. In this paper we discuss the analysis of the small signal equivalent circuits of RF SOI MOSFET's verificated for the purpose of exacting the change of parameter of small signal equivalent model followed by device flame.
Keywords
RF; Small-signal model; Parameter; SOI; Hot-carrier;
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