• Transactions on Electrical and Electronic Materials
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• 제7권5호
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• pp.257-261
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• 2006

Nano-structured carbon nitride $(CN_x)$ films were prepared by reactive RF magnetron sputtering with a DC bias at various deposition conditions, and the physical and electrical properties were investigated. FTIR spectrum indicated an ${alpha}C_3N_4$ peak in the films. The carbon nitride film deposited on Si substrate had a nano-structured surface morphology. The grain size was about 20 nm and the deposition rate was $1.7{\mu}m/hr$. When the $N_2/Ar$ ratio was 3/7, the level of nitrogen incorporation was 34.3 at%. The film had a low dielectric constant. The metal-insulator-semiconductor (MIS) capacitors that the carbon nitride was deposited as insulators, exhibited a typical C-V characteristics.

• Bulletin of the Korean Chemical Society
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• 제33권5호
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• pp.1523-1526
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• 2012

In this work, we prepared activated multi-walled carbon nanotubes/polyacrylonitrile (A-MWCNTs/C) composites by film casting and activation method. Electrochemical properties of the composites were investigated in terms of serving as MWCNTs-based electrode materials for electric double layer capacitors (EDLCs). As a result, the A-MWCNTs/C composites had much higher BET specific surface area, and pore volume, and lower volume ratio of micropores than those of pristine MWCNTs/PAN ones. Furthermore, some functional groups were added on the surface of the A-MWCNTs/C composites. The specific capacitance of the A-MWCNTs/C composites was more than 4.5 times that of the pristine ones at 0.1 V discharging voltage owing to the changes of the structure and surface characteristics of the MWCNTs by activation process.

• 한국정보통신학회논문지
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• 제17권10호
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• pp.2387-2394
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• 2013

이 논문에서는 스퍼의 크기를 줄이기 위해 전압제어발진기(VCO)의 주기마다 전하가 전달되는 새로운 루프필터의 구조를 제안하였다. 일반적인 위상고정루프의 루프필터는 저항과 커패시터를 포함하고 있다. 제안한 루프필터는 커패시터와 스위치만으로도 안정적으로 동작한다. 회로는 1.8V $0.18{\mu}m$ CMOS 공정의 파라미터를 이용하여 HSPICE로 시뮬레이션을 수행하였고 회로의 동작을 검증하였다.

• 한국전기전자재료학회논문지
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• 제26권12호
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• pp.867-871
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• 2013

The Ti adhesion layers were deposited onto the glass substrate for transparent capacitors using $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO) dielectric thin films. Graphene was transferred onto the Ti/glass substrate after growing onto the Ni/$SiO_2$/Si using rapid-thermal pulse CVD (RTPCVD). The BMNO dielectric thin films were investigated for the microstructure, dielectric and leakage properties in the case of capacitors with and without Ti adhesion layers. Leakage current and dielectric properties were strongly dependent on the Ti adhesion layers grown for graphene bottom electrode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.241-241
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• 2009

For the Radio Frequency Integrated Passive Device (RFIPD) application, we have successfully developed and characterized high break-down voltage metal-insulator-metal (MIM) capacitors with 2,000 ${\AA}$ plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which deposited with $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $250^{\circ}C$ chamber temperature. At the PECVD process condition of gas mixing rate (0.957), working pressure (0.9 Torr), and RF power (60 W), the AFM RMS value of about 2,000 ${\AA}$ silicon nitride on the bottom metal was the lowest of 0.862 nm and break-down electric field was the highest of about 8.0 MV/cm with the capacitance density of 326.5 $pF/mm^2$.

• ETRI Journal
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• 제23권1호
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• pp.23-32
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• 2001

Examination of the statistical variation of integrated passive components is crucial for designing and characterizing the performance of multichip module (MCM) substrates. In this paper, the statistical analysis of parallel plate capacitors with gridded plates manufactured in a multilayer low temperature cofired ceramic (LTCC) process is presented. A set of integrated capacitor structures is fabricated, and their scattering parameters are measured for a range of frequencies from 50 MHz to 5 GHz. Using optimized equivalent circuits obtained from HSPICE, mean and absolute deviation is calculated for each component of each device model. Monte Carlo Analysis for the capacitor structures is then performed using HSPICE. Using a comparison of the Monte Carlo results and measured data, it is determined that even a small number of sample structures, the statistical variation of the component values provides an accurate representation of the overall capacitor performance.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 ITC-CSCC -1
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• pp.642-645
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• 2002

This paper introduces a way to realize high-pass, band-stop and all-pass transfer functions using Operational Transconductance Amplifiers (OTAs) and grounded capacitors. The basic circuit configuration is constructed with five OTAs and two grounded capacitors. In the circuit with the proportional block, it is shown that the circuit parameters can be independently set and electronically tuned by the transconductance gains. Although the circuit configuration has been Down, it seems that the feature for realizing the high-pass, the band-pass and the all-pass transfer functions makes the structure more attractive and useful. An example is given together with simulated results by PSPICE.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2001년도 추계 기술심포지움
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• pp.21-27
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• 2001

Epoxy/BaTiO$_3$composite film type capacitors with excellent stability at room temperature, uniform thickness, and electrical properties over a large area were successfully fabricated. We fabricated composite capacitor films with good film formation capability and easy process ability, from ACF-resin as a matrix and two kinds of BaTiO$_3$powders as fillers to increase the dielectric constant of the composite film. The crystal structure of the powders and its effects on dielectric constant of the films were investigated by X-ray diffraction. DSC and dielectric properties tests were conducted to decide the right curing temperature and the optimum amount of the curing agent. As a result, the capacitors of $7{\mu}{\textrm}{m}$ thick film with 10nF/cm2 and low leakage current were successfully demonstrated.

• 마이크로전자및패키징학회지
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• 제24권3호
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• pp.1-6
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• 2017

As the performance and density of IC devices increase, especially the clock frequency increases, power grid network integrity problems become more challenging. To resolve these power integrity problems, the use of passive devices such as resistor, inductor, and capacitor is very important. To manage the power integrity with little noise or ripple, decoupling capacitors are essential in electronic packaging. The decoupling capacitors are classified into voltage regulator capacitor, board capacitor, package capacitor, and on-chip capacitor. For next generation packaging technologies such as 3D packaging or wafer level packaging on-chip MIM decoupling capacitor is the key element for power distribution and delivery management. This paper reviews the use and necessity of on-chip decoupling capacitor.

• 한국전기전자재료학회논문지
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• 제18권8호
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• pp.685-689
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• 2005

In the fabrication and design of MLCCs (Multilayer Ceramic Capacitors) with Ni inner electrode for medium and high voltage, reliability and dielectric breakdown mode have been investigated. For thickness of green sheet, the relationship between the rated voltage versus the thickness of green sheet. Increasing the thickness of green sheet increases the dielectric breakdown voltage. However, a practical limit to this linear relationship occurs at 30 urn and above. As the thickness of green sheet increased, dielectric breakdown voltage and weibull coefficient is increased, but abruptly decrease at 30 urn and 36 urn. When 24 urn of green sheet thickness, weibull coefficient and dielectric breakdown voltage were 13.58 and 70 V/um respectively. The results enabling the MLCCs to demonstrate high levels of reliability at medium and high voltage.