Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effect of Ti Adhesion Layer on the Electrical Properties of BMNO Capacitor Using Graphene Bottom Electrodes

그래핀 하부전극을 이용하여 BMNO 케페시터의 특성 향상을 위한 Ti Adhesion Layer의 효과

  • Park, Byeong-Ju (Department of Materials Engineering, Chungnam National University) ;
  • Yoon, Soon-Gil (Department of Materials Engineering, Chungnam National University)
  • Received : 2013.11.18
  • Accepted : 2013.11.22
  • Published : 2013.12.01
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Abstract

The Ti adhesion layers were deposited onto the glass substrate for transparent capacitors using $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO) dielectric thin films. Graphene was transferred onto the Ti/glass substrate after growing onto the Ni/$SiO_2$/Si using rapid-thermal pulse CVD (RTPCVD). The BMNO dielectric thin films were investigated for the microstructure, dielectric and leakage properties in the case of capacitors with and without Ti adhesion layers. Leakage current and dielectric properties were strongly dependent on the Ti adhesion layers grown for graphene bottom electrode.

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References

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