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http://dx.doi.org/10.4313/TEEM.2006.7.5.257

Electrical Properties of MIM and MIS Structure using Carbon Nitride Films  

Lee, Hyo-Ung (Department of Electronic Engineering, Kyungnam University)
Lee, Sung-Pil (Department of Electronic Engineering, Kyungnam University)
Publication Information
Transactions on Electrical and Electronic Materials / v.7, no.5, 2006 , pp. 257-261 More about this Journal
Abstract
Nano-structured carbon nitride $(CN_x)$ films were prepared by reactive RF magnetron sputtering with a DC bias at various deposition conditions, and the physical and electrical properties were investigated. FTIR spectrum indicated an ${alpha}C_3N_4$ peak in the films. The carbon nitride film deposited on Si substrate had a nano-structured surface morphology. The grain size was about 20 nm and the deposition rate was $1.7{\mu}m/hr$. When the $N_2/Ar$ ratio was 3/7, the level of nitrogen incorporation was 34.3 at%. The film had a low dielectric constant. The metal-insulator-semiconductor (MIS) capacitors that the carbon nitride was deposited as insulators, exhibited a typical C-V characteristics.
Keywords
Nano-structure; Carbon nitride; RF magnetron sputter; MIS capacitors;
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Times Cited By KSCI : 1  (Citation Analysis)
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