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http://dx.doi.org/10.4313/JKEM.2013.26.12.867

Effect of Ti Adhesion Layer on the Electrical Properties of BMNO Capacitor Using Graphene Bottom Electrodes  

Park, Byeong-Ju (Department of Materials Engineering, Chungnam National University)
Yoon, Soon-Gil (Department of Materials Engineering, Chungnam National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.26, no.12, 2013 , pp. 867-871 More about this Journal
Abstract
The Ti adhesion layers were deposited onto the glass substrate for transparent capacitors using $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO) dielectric thin films. Graphene was transferred onto the Ti/glass substrate after growing onto the Ni/$SiO_2$/Si using rapid-thermal pulse CVD (RTPCVD). The BMNO dielectric thin films were investigated for the microstructure, dielectric and leakage properties in the case of capacitors with and without Ti adhesion layers. Leakage current and dielectric properties were strongly dependent on the Ti adhesion layers grown for graphene bottom electrode.
Keywords
Ti adhesion layer; Graphene electrode; BMNO capacitor; RTPCVD;
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