• 조명전기설비학회논문지
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• 제25권11호
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• pp.98-102
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• 2011

This paper describes inverse E class frequency multiplier which is lower inductance and peak switching voltage than E class frequency multiplier. The frequency multiplier is designed to generate 5.8[GHz] frequency by doubling the input frequency 2.9[GHz]. The peak switching voltage of designed inverse E class frequency multiplier with 11[V] is lower 4[V] than that of E class frequency multiplier with 15[V]. The inverse E class frequency multiplier has a conversion gain 6[dB] at output power 21[dBm] and maximum 35[%] power efficiency.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제55권8호
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• pp.416-422
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• 2006

With the increasing demand for renewable energy, distributed power included in fuel cells have been studied and developed as a future energy source. For this system, a power conversion circuit is necessary to interface the generated power to the utility. In many cases, a high step-up dc/dc converter is needed to boost low input voltage to high voltage output. Conventional methods using cascade dc/dc converters cause extra complexity and higher cost. The conventional topologies to get high output voltage use flyback dc/dc converters. They have the leakage components that cause stress and loss of energy that results in low efficiency. This paper presents a high boost converter with a voltage multiplier and a coupled inductor. The secondary voltage of the coupled inductor is rectified using a voltage multiplier and series-connected with the boost voltage of primary voltage of the coupled inductor. Therefore, high boost voltage is obtained with low duty cycle. Theoretical analysis and experimental results verify the proposed solutions using a 300W prototype.

• Journal of electromagnetic engineering and science
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• 제14권1호
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• pp.25-30
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• 2014

This paper discusses the design of a high frequency Greinacher voltage multiplier as rectifier; it has a greater conversion efficiency and higher output direct current (DC) voltage at high power compared to a simple halfwave rectifier. Multiple diodes in the Greinacher voltage multiplier with distributed circuits consume excited power to the rectifier equally, thereby increasing the overall power capacity of the rectifier system. The proposed rectifiers are a Greinacher voltage doubler and a Greinacher voltage quadrupler, which consist of only diodes and distributed circuits for high frequency applications. For each rectifier, the RF-to-DC conversion efficiency and output DC voltage for each input power and load resistance are analyzed for the maximum conversion efficiency. The input power with maximum conversion efficiency of the designed Greinacher voltage doubler and quadrupler is 3 and 7 dB higher, respectively;than that of the halfwave rectifier.

• Journal of Electrical Engineering and Technology
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• 제12권1호
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• pp.189-197
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• 2017

This paper elaborates two novel proposed topologies (type-I and type-II) of the high step-up DC-DC converter using switched inductor and voltage multiplier cell. The advantages of these proposed topologies are the less voltage stress on semiconductor devices, low device count, high power conversion efficiency, high switch utilization factor and high diode utilization factor. We analyze the Type-II topologies operating principle and mathematical analysis in detail in continuous conduction mode. High-intensity discharge lamp for the automotive application can use the derived topologies. The proposed converters give better performance when compared to the existing types. Also, it is found that the proposed type-II converter has relatively higher voltage gain compared to the type-I converter. A 40 W, 12 V input voltage and 72 V output voltage has developed for the type-II converter and the performances are validated.

• 한국음향학회지
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• 제19권1호
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• pp.84-88
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• 2000

본 논문에서는 저전압에서 동작하는 CMOS 아날로그 4상한 멀티플라이어를 설계하였다. 제안된 멀티플라이어는 2개의 완전 차동 트랜스컨덕터로 구성되고 공급 전압을 VT+2VDS,sat+VDS,triode로 낮게 유지할 수 있다. 설계된 아날로그 4상한 멀티플라이어는 1.2V 공급전압에서 0.25㎛ CMOS n-well 공정 파라미터를 이용하여 HSPICE 시뮬레이션 하였다. 시뮬레이션 결과 0.7VP-P 최대 입력에서 THD는 1.28%이다.

• 대한전자공학회논문지SD
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• 제44권1호
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• pp.16-21
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• 2007

본 논문은 기존의 전압 체배기를 개선하여, 전압발생 효율과 전류 구동능력을 향상시킨 이중 경로 전파 전압 체배기를 제안하고 제작하여 특성을 측정하였다. 제안된 회로는 종래의 회로에 비하여 4개의 다이오드가 추가로 필요하나, 이로 인한 면적증가는 무시할 수 있는 수준이다. 시뮬레이션 결과에 의하면, 제안된 회로의 출력 전력은 종래회로에 비하여 약 2배 정도 향상되었다. 제작된 칩의 측정결과로부터 제안된 회로의 전압이득은 부하전류를 구동하지 않는 조건에서, 종래 회로보다 약 51% 정도 향상되었다. 제안된 회로는 UHF 대역 주파수 이상의 RFID 태그와 수동형 센서의 전압 체배기로써 사용하기에 적합하다.

• 대한전자공학회논문지SD
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• 제40권12호
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• pp.72-79
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• 2003

본 논문에서는 CMOS 다치 논리회로를 이용한 32×32 Modified Booth 곱셈기를 제시하였다. 이 곱셈기는 Radix-4 알고리즘을 이용하였으며, 전류모드 CMOS 4차 논리회로로 구현하였다. 설계한 곱셈기는 트랜지스터 수를 기존의 전압 모드 2진 논리 곱셈기에 비해 63.2%, 이전의 다치 논리 곱셈기에 비해 37.3% 감소시켰다. 이 곱셈기는 내부 구조를 규칙적으로 배열하여 확장성을 갖도록 하였다. 설계한 회로는 3.3V의 공급전압과 단위전류 10㎂를 사용하여, 0.3㎛ CMOS 기술을 이용하여 구현하였으며 HSPICE를 사용하여 검증하였다. 시뮬레이션 결과, 설계한 곱셈기는 5.9㎱의 최대 전달지연시간과 16.9mW의 평균 전력소모 특성을 갖는다.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2005년도 종합학술발표회 논문집 Vol.15 No.1
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• pp.279-284
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• 2005

We investigated the impedance matching characteristics of UHF-band RFID tag antenna and tag chip for increased reading range. A voltage multiplier designed using 0.4 $\mu$m zero-$V_T$ MOSFET showed that DC output voltage of about 2 V can be obtained using standard CMOS process. The input impedance of the voltage multiplier was examined to achieve impedance matching to the RFID tag antenna using analytical and numerical approaches. The input impedance of the voltage multiplier could be varied in a wide range by selecting the size of MOSFET and the number of multiplying stages, and thus can be impedance matched to a tag antenna in presence of other tag circuit blocks. A meander line inductively-coupled RFID tag antenna operating at UHF band also shows the feasibility of impedance matching to tile RFID tag chip.

• The Journal of the Acoustical Society of Korea
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• 제18권3E호
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• pp.44-48
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• 1999

The CMOS four-quadrant analog multiplier for low-voltage low-power applications are presented in this thesis. The circuit approach is based on the characteristic of the LV (Low-Voltage) composite transistor which is one of the useful analog building block. SPICE simulations are carried out to examine the performances of the designed multiplier. Simulation results are obtained by 0.6㎛ CMOS parameters with 2V power supply. The basic configuration of the multiplier is the CMOS Gilbert cell with two LV composite transistors. The linear input range of the multiplier is over ±0.4V with a linearity error of less than 1.3%. The measured -3dB bandwidth is 288MHz and the power dissipation is 255 ㎼.

• 대한전자공학회논문지
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• 제2권2호
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• pp.9-16
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• 1965

The characteristics of electronic multipliers and their accuracy are analyzed. From the analysis a low cost, four-quadrant timedivision electronic multiplier jis built. This multiplier produces an output voltage equal to 0.01 of the instantaneous product of two input voltage representing independent variables. Each input may either be constant or vary with time over a range of ${\pm}$100 volts. Drift and noise in this multiplier are kept at very low level and dynamic response is below 0.5 decibels up to 700 cycles per second. Methods of testing this multiplier and the results are also described. It is shown that the results agree with theoretical values satisfactorily.