• Biotechnology and Bioprocess Engineering:BBE
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• 제7권6호
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• pp.371-374
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• 2002

Production of poly(3-hydroxybutyrate-co-3-hydroxyvalerate)［P(3HB/V)］, by fed-batch culture of recombinant Escherichia coli harboring a plasmid containing the Alcaligenes latus polyhy-droxyalkanoate (PHA) biosynthesis genes, was examined in two pilot-scale fermentors with air supply only, In a 30 L fermentor having a XLa value of 0.11 S­$^1$, the final P(3HB/V) concentration and the P(3HB/V) content obtained were 29.6 g/L and 70.1 wt%, respectively giving a productivity of 1.37 g P(3HB/V)/L-h. In a 300 L fermentor having a XLa of 0.03 S­$^1$, the P(3HB/V) concentration and the P(3HB/V) content were 20.4 g/L and 69 wt%, respectively giving a productivity of 1.06g P(3HB/V)/L-h. These results suggest that economical production of P(3HB/V) is possible by fed-batch culture of recombinant E. coli in a large-scale fermentor having low KLa value.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1787-1790
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• 1996

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 E
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• pp.1743-1745
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• 1998

Insulators of 154kV T/L have been frequently damaged by fault currents. Arcing horn is a very effective and economic method for protection of insulators from the flashover. We developed arcing horns for 154kV T/L in order to protect insulators from the arc[1]. This paper analyzes the status of insulator failures in 154kV T/L after installation of the arcing horns.

• 전기전자학회논문지
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• 제24권3호
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• pp.859-866
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• 2020

본 논문에서는 2.9 V ~ 5.6V의 넓은 입력 전압 범위를 가지는 웨어러블 AMOLED용 2-채널 DC-DC 변환기를 설계한다. 양전압 V_POS는 과도한 입력전압이 인가된다 하더라도 정상 출력 전압을 생성되는 OPC를 내장하고, 경부하 효율을 제고하기 위한 SPWM-PWM 듀얼모드 및 파워 트랜지스터 3-분할을 적용한 부스트 변환기로 설계한다. 음전압 V_NEG는 전력 효율을 높이기 위해 0.5x 인버팅 차지펌프를 이용해 설계한다. 제안된 DC-DC 변환기는 0.18-㎛ BCDMOS 공정으로 설계하였다. DC-DC 변환기는 2.9V~5.6V의 입력 전압에 대해 4.6V의V_POS와 -0.6V~-2.3V의 V_NEG 전압을 생성한다. 또한 1mA~70mA 부하전류에서 49%~92%의 전력효율과 최대 20mV의 출력 리플을 가졌다.

• 대한화학회지
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• 제61권1호
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• pp.12-15
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• 2017

We presented a mapping the work function of the vanadium pentoxide ($V_2O_5$) nanonet structures by scanning Kelvin probe microscopy (SKPM). In this measurement, the $V_2O_5$ nanonet was self-assembled via dropping the solution of $V_2O_5$ nanowires (NWs) onto the $SiO_2$ substrate and drying the solvent, resulting in the networks of $V_2O_5$ NWs. We found that the SKPM signal as a surface potential of $V_2O_5$ nanonet is attributed to the contact potential difference (CPD) between the work functions of the metal tip and the $V_2O_5$ nanonet. We generated the histograms of the CPD signals obtained from the SKPM mapping of the $V_2O_5$ nanonet as well as the highly ordered pyrolytic graphite (HOPG) which is used as a reference for the calibration of the SKPM tip. By using the histogram peaks of the CPD signals, we successfully estimated the work function of ~5.1 eV for the $V_2O_5$ nanonet structures. This work provides a possibility of a nanometer-scale imaging of the work function of the various nanostructures and helps to understand the electrical characteristics of the future electronic devices.

• Nuclear Engineering and Technology
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• 제49권1호
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• pp.209-215
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• 2017

Fast neutron irradiation was used to improve the switching speed of a 600-V nonpunch-through insulated gate bipolar transistor. Fast neutron irradiation was carried out at 30-MeV energy in doses of $1{\times}10^8n/cm^2$, $1{\times}10^9n/cm^2$, $1{\times}10^{10}n/cm^2$, and $1{\times}10^{11}n/cm^2$. Electrical characteristics such as current-voltage, forward on-state voltage drop, and switching speed of the device were analyzed and compared with those prior to irradiation. The on-state voltage drop of the initial devices prior to irradiation was 2.08 V, which increased to 2.10 V, 2.20 V, 2.3 V, and 2.4 V, respectively, depending on the irradiation dose. This effect arises because of the lattice defects generated by the fast neutrons. In particular, the turnoff delay time was reduced to 92 nanoseconds, 45% of that prior to irradiation, which means there is a substantial improvement in the switching speed of the device.

• Journal of applied mathematics & informatics
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• 제27권5_6호
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• pp.1157-1163
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• 2009

Let G be a graph with vertex set V(G) and let f be a nonnegative integer-valued function defined on V(G). A spanning subgraph F of G is called a fractional f-factor if $d^h_G$(x)=f(x) for all x $\in$ for all x $\in$ V (G), where $d^h_G$ (x) = ${\Sigma}_{e{\in}E_x}$ h(e) is the fractional degree of x $\in$ V(F) with $E_x$ = {e : e = xy $\in$ E|G|}. In this paper it is proved that if ${\delta}(G){\geq}{\frac{b^2(k-1)}{a}},\;n>\frac{(a+b)(k(a+b)-2)}{a}$ and $|N_G(x_1){\cup}N_G(x_2){\cup}{\cdots}{\cup}N_G(x_k)|{\geq}\frac{bn}{a+b}$ for any independent subset ${x_1,x_2,...,x_k}$ of V(G), then G has a fractional f-factor. Where k $\geq$ 2 be a positive integer not larger than the independence number of G, a and b are integers such that 1 $\leq$ a $\leq$ f(x) $\leq$ b for every x $\in$ V(G). Furthermore, we show that the result is best possible in some sense.

• 대한수학회보
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• 제49권4호
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• pp.715-736
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• 2012

Brown provided a structure theorem for a class of perfect ideals of grade 3 with type ${\lambda}$ > 0. We introduced a skew-symmetrizable matrix to describe a structure theorem for complete intersections of grade 4 in a Noetherian local ring. We construct a class of perfect ideals I of grade 3 with type 2 defined by a certain skew-symmetrizable matrix. We present the Hilbert function of the standard $k$-algebras R/I, where R is the polynomial ring $R=k[v_0,v_1,{\ldots},v_m]$ over a field $k$ with indeterminates $v_i$ and deg $v_i=1$.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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• pp.355-358
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• 2004

In this work, N-LDMOSFET(Lateral Double diffused MOSFET) was designed and fabricated on SOI(Silicon-On-Insulator) substrate, for such applications as motor controllers and high voltage switches, fuel injection controller systems in automobile and SSR(Solid State Rexay)etc. The LDMOSFET was designed to overcome the floating body effects that appear in the conventional thick SOI MOS structure by adding p+ region in source region. Also, RESURF(Reduced SURface Field) structure was proposed in this work in order to reduce a large on-resistance of LDMOSFET when operated keeping high break down voltage. Breakdown voltage was 268v in off-state ($V_{GS}$=OV) at room temperature in $22{\mu}m$ drift length LDMOSFET. When 5V of $V_{GS}$ and 30V of $V_{DS}$ applied, the on resistance(Ron), the transcon ductance($G_m$) and the threshold voltage($V_T$) was 1.76k$\Omega$, 79.7uA/V and 1.85V respectively.

• 한국지진공학회:학술대회논문집
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• 한국지진공학회 2006년도 학술발표회 논문집
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• pp.56-63
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• 2006

Facilities of 76skV Substation(S/S) play an important role in electric power supply grids. Various power facilities of 765kV S/S might be damaged enormously if a strong earthquake occurs. In an effort to mitigate possible earthquake disasters, KEPRI (Korea Electric Power Research Institute) set forth plans to verify seismic safety of the facilities of 765kV S/S. To accomplish the task, an earthquake monitoring systems is constructed at four 765kV S/S sites(Shin-AnSung, Shin-TaeBaek, Shin-SeoSan and Shin-GaPyung). Data from these earthquake monitoring stations are being transmitted via satellite communication. Currently, KEPRI is operating an earthquake monitoring system in freefield of Shin-SeoSan S/S (NSS) tentatively, Also, the data from NSS is preliminarily analyzed using the horizontal to vertical (H/V) spectrum ratio method. The method of H/V spectrum ratio has been used to infer site amplification without previous knowledge of near surface geology. The results of data analysis shorts good S/N ratio and amplification of 20-25 Hz by site effect. In the near future, the accumulated data is expected to provide a basis for assessing and predicting any damages to integrity of 765kV S/S facilities by earthquakes.