Nuclear Engineering and Technology

Korean Nuclear Society (한국원자력학회)
권호 표지
DOI QR코드

DOI QR Code

Improvement of Switching Speed of a 600-V Nonpunch-Through Insulated Gate Bipolar Transistor Using Fast Neutron Irradiation

  • Received : 2016.03.23
  • Accepted : 2016.08.30
  • Published : 2017.02.25
Download PDF
⟨ Previous Next ⟩

Abstract

Fast neutron irradiation was used to improve the switching speed of a 600-V nonpunch-through insulated gate bipolar transistor. Fast neutron irradiation was carried out at 30-MeV energy in doses of $1{\times}10^8n/cm^2$, $1{\times}10^9n/cm^2$, $1{\times}10^{10}n/cm^2$, and $1{\times}10^{11}n/cm^2$. Electrical characteristics such as current-voltage, forward on-state voltage drop, and switching speed of the device were analyzed and compared with those prior to irradiation. The on-state voltage drop of the initial devices prior to irradiation was 2.08 V, which increased to 2.10 V, 2.20 V, 2.3 V, and 2.4 V, respectively, depending on the irradiation dose. This effect arises because of the lattice defects generated by the fast neutrons. In particular, the turnoff delay time was reduced to 92 nanoseconds, 45% of that prior to irradiation, which means there is a substantial improvement in the switching speed of the device.

Keywords

References

  1. T. Matsudai, H. Nozaki, S. Umekawa, M. Tanaka, M. Kobayashi, H. Hattori, A. Nakagawa, Advanced 60 ${\mu}m$ thin 600 V punch-through IGBT concept for extremely low forward voltage and low turn-off loss. In Power Semiconductor Devices and ICs, 2001. ISPSD'01. Proceedings of the 13th International Symposium on (pp. 441-444). IEEE.
  2. S.M. Kang, T.J. Eom, S.J. Kim, H.W. Kim, J.Y. Cho, C. Lee, Reverse recovery characteristics and defect distribution in an electron-irradiated silicon p-n junction diode, Mater. Chem. Phys. 84 (2004) 187-191. https://doi.org/10.1016/j.matchemphys.2003.11.030
  3. B. Weis, M. Bruckmann, A New Gate Driver Circuit for Improved Turn-off Characteristics of High Current IGBT Modules, Records of IEEE 33rd Annual Industry Applications Conference, IAS 1998, vol. 2, pp. 1073-1077, St. Louis, MO, USA, Oct. 1998.
  4. M.T. Rahimo, S.R. Jones, C-Class Ultra-fast Recovery Diodes for High Speed Switching Application, Power Division Semelab plc, Lutterworth, UK, 2000.
  5. B.J. Baliga, Power Semiconductor Devices, PWS Publishing Company, Boston, MA, 1996, p. 476.
  6. B.J. Baliga, E. Sun, Comparison of gold, platinum, and electron irradiation for controlling lifetime in power rectifiers, IEEE Trans. Electron Devices 24 (1977) 985.
  7. P. Cova, R. Menozzi, M. Portesine, M. Bianconi, E. Gombia, R. Mosca, Experimental and numerical study of H+ irradiated p-i-n diodes for snubberless applications, Solid State Electron 49 (2005) 183. https://doi.org/10.1016/j.sse.2004.08.011
  8. P. Hazdra, J. Vobecky, K. Brand, Optimum lifetime structuring in silicon power diodes by means of various irradiation techniques, Nucl. Instrum. Methods Phys. Res. Sect. B 186 (2002) 414. https://doi.org/10.1016/S0168-583X(01)00898-9
  9. T.P. Chow, D.N. Pattanayak, A. Mogro-Campero, B.J. Baliga, M.S. Adler, Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 1992, IEEE, Minneapolis, MN, USA, 7-8, Oct, 1992.
  10. B.J. Baliga, Modern Power Devices, Wiley, New York, 1996, p. 52.
  11. A. Guerra, K. Andoh, S. Fimiani, Ultra-fast Recovery Diodes Meet Today's Requirements for High Frequency Operation and Power Ratings in SMPS Applications, International Rectifier White Paper, 2000.
  12. A. Mogro-Campero, R.P. Love, M.F. Chang, R.F. Dyer, Shorter turn-off times in insulated gate transistors by proton implantation, IEEE Electron Device Lett. 6 (1985) 224. https://doi.org/10.1109/EDL.1985.26105
  13. M. Mori, H. Kobayashi, T. Saiki, M. Nagasu, J. Sakano, R. Seitou, 3.3 kV punchthrough IGBT with low loss and fast switching, IEEE (1997) 229-232.
  14. J.W. Shin, S.I. Bak, C.M. Ham, E.J. In, D.Y. Kim, K.J. Min, Y. Zhou, T.S. Park, S.W. Hong, V.N. Bhoraskar, Nucl. Instrum. Methods Phys. Res. Sect. A 797 (2015) 304-310. https://doi.org/10.1016/j.nima.2015.06.042
  15. D.B. Pelowitz, MCNP6 User's Manual Version 1.0, LA-CP-13-006342013, Los Alamos National Security, LLC.
  16. Z.H. Tong, S.S. Ang, W.D. Brown, Microelectron. Reliab. 36 (1996) 1489-1498. https://doi.org/10.1016/0026-2714(95)00174-3

Cited by

  1. Design of a RF Switch Used in Redundant Atomic Clock Configurations vol.19, pp.10, 2017, https://doi.org/10.3390/s19102331
  2. Microwave photoconductance decay measurements of n- and p-type silicon irradiated with neutrons and protons vol.185, pp.None, 2017, https://doi.org/10.1016/j.radphyschem.2021.109501