• Proceedings of the KIPE Conference
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• 2017.07a
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• pp.138-139
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• 2017

This paper describes the design and implementation of a trigger circuit which can be series connected with main pulse circuit for a xenon flash lamp driver. For generating high voltage, the trigger circuit is designed as an inductive energy storage pulsed power modulator with 2 state step-up circuit consisting of a boost converter and a flyback circuit. In order to guarantee pulse width, a resonant capacitor on the output side of the flyback circuit is designed. This capacitor limits the output voltage to protect the flyback switch. In addition, to protect another power supply of xenon flash lamp driver from trigger pulse, the high voltage transformer which can carry the full current of main pulse is designed. To verify the proposed design, the trigger circuit is developed with the specification of maximum 23 kV, 0.6 J/pulse output and tested with a xenon flash lamp driver consisting of a main pulse circuit and a simmer circuit.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.05a
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• pp.735-739
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• 2002

PTB(Power Transfer Breaker) is a device which incorporate the functions of ACB(Air Circuit Breaker) and ATS(Automatic Transfer Switch). ACB is a circuit breaker against overload and ATS is a switching device to transfer the load between two electric power sources. An existing PTB design based upon the 5 bar & cam mechanism has been regarded to be too complex and thus a simpler 4 bar mechanism with trigger lock is proposed. Experimentation and optimization of the trigger lock is presented.

• ETRI Journal
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• v.35 no.5
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• pp.797-807
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• 2013

In this paper, an input receiver with a hysteresis characteristic that can work at voltage levels between 0.9 V and 5 V is proposed. The input receiver can be used as a wide voltage range Schmitt trigger also. At the same time, reliable circuit operation is ensured. According to the research findings, this is the first time a wide voltage range Schmitt trigger is being reported. The proposed circuit is compared with previously reported input receivers, and it is shown that the circuit has better noise immunity. The proposed input receiver ends the need for a separate Schmitt trigger and input buffer. The frequency of operation is also higher than that of the previously reported receiver. The circuit is simulated using HSPICE at 0.35-${\mu}m$ standard thin oxide technology. Monte Carlo analysis is conducted at different process conditions, showing that the proposed circuit works well for different process conditions at different voltage levels of operation. A noise impulse of ($V_{CC}/2$) magnitude is added to the input voltage to show that the receiver receives the correct logic level even in the presence of noise. Here, $V_{CC}$ is the fixed voltage supply of 3.3 V.

• ETRI Journal
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• v.37 no.1
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• pp.97-106
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• 2015

In this paper, MOS-triggered silicon-controlled rectifier (SCR)-based electrostatic discharge (ESD) protection circuits for mobile application in 3.3 V I/O and SCR-based ESD protection circuits with floating N+/P+ diffusion regions for inverter and light-emitting diode driver applications in 20 V power clamps were designed. The breakdown voltage is induced by a grounded-gate NMOS (ggNMOS) in the MOS-triggered SCR-based ESD protection circuit for 3.3 V I/O. This lowers the breakdown voltage of the SCR by providing a trigger current to the P-well of the SCR. However, the operation resistance is increased compared to SCR, because additional diffusion regions increase the overall resistance of the protection circuit. To overcome this problem, the number of ggNMOS fingers was increased. The ESD protection circuit for the power clamp application at 20 V had a breakdown voltage of 23 V; the product of a high holding voltage by the N+/P+ floating diffusion region. The trigger voltage was improved by the partial insertion of a P-body to narrow the gap between the trigger and holding voltages. The ESD protection circuits for low- and high-voltage applications were designed using $0.18{\mu}m$ Bipolar-CMOS-DMOS technology, with $100{\mu}m$ width. Electrical characteristics and robustness are analyzed by a transmission line pulse measurement and an ESD pulse generator (ESS-6008).

• Proceedings of the KIPE Conference
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• 2018.07a
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• pp.51-53
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• 2018

This paper describes the design and implementation of a circuit consisting of a simmer power supply unit and a series trigger unit that can be applicable to xenon lamp driving. An LCC resonant converter based on the continuous conduction mode (CCM) is applied to the simmer circuit and by using the current output control it is possible to maintain the ionization of the lamp which has the negative resistance load characteristic. At the same time, in order to generate a high voltage, a series trigger circuit which has a number of capacitors and diodes is designed. The generated high trigger output voltage could ionize the xenon gas. This paper explains the configuration and features of the integrated circuit system, and verifies the proposed design and stable operation of the xenon lamp. The experimental and simulation results show the not only rationality but also stability of the proposed circuit.

• Journal of the Korean Institute of Telematics and Electronics
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• v.15 no.3
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• pp.30-34
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• 1978

A bridge inverter circuit with a paralled resonant circuit load is analyzed. The approach to the circuit analysis leads to reasonable reality. The limit of trigger frequency, the range of SCR turn-off time, the peak capacitor voltage and the relation between the load current and trigger rate are derived for the suitable design criteria. Numerical method is used for calculation of transcendental equation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.4
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• pp.42-50
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• 2003

This paper presents an embedded RC oscillator which has temperature compensation circuits. The conventional RC oscillator has frequency deviation about 15%, which is caused by variation of resistors and the reference voltage of schmitt trigger from the temperature condition. In this paper, the proposed circuit use a CMOS bandgap reference having balanced current temperature coefficients as a triggering voltage of schmitt trigger. The constant current sources consist of current mirror circuit with the positive and negative temperature coefficient. The proposed circuit shows less 3% frequency deviation for variation of temperature, supply voltage and process parameters.

• Proceedings of the KSME Conference
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• 2001.11a
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• pp.810-814
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• 2001

power transfer breaker is a device used to transfer the load from the electricity power line to the emergency generators. In case of overload, it also functions as a circuit breaker. In this work, a new mechanism for the device is suggested. Among the various design challenges, optimization of the trigger mechanism is identified as of central importance. Optimal design decisions are made with the use of Taguchi method.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.625-631
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• 2014

We propose a compact power-on reset circuit consisting of a switched capacitor, a capacitor, and a Schmitt trigger inverter. A switched capacitor working with a clock signal charges the capacitor. Thus, the voltage across the capacitor is increased toward the supply voltage. The circuit provides a reset pulse until the voltage across the capacitor reaches the high threshold voltage of the Schmitt trigger inverter. The proposed circuit is simple, compact, has no static power consumption, and works for a wide range of power-on rising times. Furthermore, the clock signal is available while the reset pulse is activated. The proposed circuit works for up to 6 s of power-on rising time, and occupies a $60{\times}30{\mu}m^2$ active area.

• Journal of IKEEE
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• v.21 no.2
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• pp.150-153
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• 2017

In this paper, a structure of GCNMOS based ESD protection circuit using floating-body technique is proposed. TCAD simulation of Synopsys was used to compare with the conventional GGNMOS and GCNMOS. Compared with the conventional GCNMOS, the proposed ESD protection circuit has lower trigger voltage and faster turn-on-time than conventional circuit because of the added NMOSFET. In the simulation result, the triggering voltage of the proposed ESD protection circuit is 4.86V and the turn-on-time is 1.47ns.