• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.15 no.5
• /
• pp.201-206
• /
• 2015

A new electronically stopband tunable filter is proposed with three-input single-output using Operational Transconductance Amplifier (OTA) in this paper. The proposed filter provides band pass, low pass and high pass multifunctional responses. Centre frequency ($f_c$) and quality factor (Q) of the realized filters could independently tuned without disturbing each other. Various network sensitivity and non-ideal characteristic analysis are done to check the sensitivity and parasitic effect of different circuit parameters. The CMOS realization of filter is done with 1.8V-0.18um process parameters and HSPICE simulation results are presented to assert the presented theory.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.50 no.6
• /
• pp.91-98
• /
• 2013

Magnetic sensor chip for measuring bio-magnetism is implemented in $0.18{\mu}m$ CMOS technology. The magnetic sensor chip consists of a small-sized high inductance coil sensor and an instrumentation amplifier (IA). High inductance coil sensor with suitable sensitivity and bandwidth for measurement of bio-magnetic signal is designed using electromagnetic field simulation. Low gm operational transconductance amplifier (OTA) using transconductance reduction techniques is designed for on-chip solution. Output signal sensitivity of magnetic sensor chip is $3.25fT/{\mu}V$ and reference noise of 21.1fT/${\surd}$Hz. Proposed IA is designed along with band pass filters(BPF) to reduce magnetic signal noise by using current feedback techniques. Proposed IA achieves a common mode rejection ratio of 117.5dB while the input noise referred is kept below $0.87{\mu}V$.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.47 no.1
• /
• pp.52-59
• /
• 2010

This paper proposes a high-resolution and high-frame rate CMOS image sensor with column-wise cyclic ADC. The proposed ADC uses the sharing techniques of OTAs and capacitors for low-power consumption and small silicon area. The proposed ADC was verified implementing the prototype chip as QVGA image sensor. The measured maximum frame rate is 120 fps, and the power consumption is 130 mW. The power supply is 3.3 V, and the die size is $4.8\;mm\;{\times}\;3.5\;mm$. The prototype chip was fabricated in a 2-poly 3-metal $0.35-{\mu}m$ CMOS process.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.54 no.3
• /
• pp.109-113
• /
• 2005

It has been reported that the failure phenomenon and variation of electrical characteristic due to the effect of electrostatic discharge(ESD) in silicon devices. But we had fess reports about the phenomenon due to the ESD in the compound semiconductors. So there are a lot of difficulty to the phenomenon analysis and to select the protection method of main circuits or the devices. It has not been reported that the relation between the ESD stress and GaN devices, which is remarkable to apply the operation in high temperature and high voltage due to the superior material characteristic. We studied that the characteristic variation of the AlGaN/GaN HEMT current, the leakage current, the transconductance(gm) and the failure phenomenon of device due to the ESD stress. We have applied the ESD stress by transmission line pulse(TLP) method, which is widely used in ESD stress experiments, and observed the variation of the electrical characteristic before and after applying the ESD stress. The on-current trended to increase after applying the ESD stress. The leakage current and transconductance were changed slightly. The failure point of device was mainly located in middle and edge sides of the gate, was considered the increase of temperature due to a leakage current. The GaN devices have poor thermal characteristic due to usage of the sapphire substrate, so it have been shown to easily fail at low voltage compared to the conventional GaAs devices.

• Proceedings of the KIEE Conference
• /
• 2006.07c
• /
• pp.1297-1298
• /
• 2006

Omega-shaped-gate (OSG) nanowire-based field effect transistors (FETs) have been attracted recently attention due to their highdevice performance expected from theoretical simulations among nanowire-based FETs with other gate geometries. OSG FETs with the channels of ZnO nanowires were successfully fabricated in this study with photolithographic processes. In the OSG FETs fabricated on oxidized Si substrates, the channels of ZnO nanowires with diameters of about 60 nm are coated surroundingly by $Al_{2}O_{3}$ as gate dielectrics with atomic layer deposition. About 80 % of the surfaces of the nanowires coated with $Al_{2}O_{3}$ is covered with gate metal to form OSG FETs. A representative OSG FET fabricated in this study exhibits a mobility of 98.9 $cm^{2}/Vs$, a peak transconductance of 0.4 ${\mu}S$, and an Ion/Ioff ratio of $10^6$ the value of the Ion/Ioff ratio obtained from this OSG FET is the highest among nanowire-based FETs, to our knowledge. Its mobility, peak transconductance, and Ion/Ioff ratio arc remarkably enhanced by 11.5, 32, and $10^6$ times, respectively, compared with a back-gate FET with the same ZnO nanowire channel as utilized in the OSG FET.

• Journal of Convergence for Information Technology
• /
• v.11 no.7
• /
• pp.104-110
• /
• 2021

A novel selective oxidation process has been developed for low source/drain (S/D) series resistance of the fin channel metal oxide semiconductor field effect transistor (MOSFET). Using this technique, the selective oxidation fin-channel MOSFET (SoxFET) has the gate-all-around structure and gradually enhanced S/D extension regions. The SoxFET demonstrated over 70% reduction in S/D series resistance compared to the control device. Moreover, it was found that the SoxFET behaved better in performance, not only a higher drive current but also higher transconductances with suppressing subthreshold swing and drain induced barrier lowering (DIBL) characteristics, than the control device. The saturation current, threshold voltage, peak linear transconductance, peak saturation transconductance, subthreshold swing, and DIBL for the fabricated SoxFET are 305 ㎂/㎛, 0.33 V, 13.5 𝜇S, 76.4 𝜇S, 78 mV/dec, and 62 mV/V, respectively.

• Proceedings of the KIEE Conference
• /
• 1999.07d
• /
• pp.1910-1912
• /
• 1999

This paper was described electrical characteristics of Metal/GaN contact for application of GaN thin films. The lowest contact resistivity was $1.7\times10^{-7}[\Omega-cm^2]$ at Ti/Al Structure. Mean while, GaN MESFETs have been fabricated with a 250 nm thick channel on a high resistivity GaN layer grown by GAIVBE system. For a gate-source diode reverse bias of 35 V, the gate leakage current was $120{\mu}A$. From the data, we estimate the transconductance for our GaN MESFET to be 25 mS/mm.

• Transactions on Electrical and Electronic Materials
• /
• v.16 no.2
• /
• pp.78-81
• /
• 2015

Pure ZnO and ZnO nanowires doped with 3 wt.% Ga (‘3GZO’) were grown by pulsed laser deposition in a furnace system. The doping of Ga in ZnO nanowires was analyzed by observing the optical and chemical properties of the doped nanowires. The diameter and length of nanowires were under 200 nm and several ${\mu}m$, respectively. Changes of significant resistance were observed and the sensitivities of ZnO and 3GZO nanowires were compared. The sensitivities of ZnO and 3GZO nanowire sensors measured at 300℃ for 1 ppm of ethanol gas were 97% and 48%, respectively.

• Journal of IKEEE
• /
• v.12 no.3
• /
• pp.172-175
• /
• 2008

An improved triangular/square-wave VCO using OTAs is presented. It consists of two OTAs, a timing capacitor, and a resistor. A prototype circuit built with commercially available components exhibits less than 0.01% nonlinearity in its current-to-frequency transfer characteristic from 0.2 to 14 kHz and 450 ppm/$^{\circ}C$ temperature coefficient of frequency over $-20^{\circ}C$ to $40^{\circ}$.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.54 no.1
• /
• pp.18-22
• /
• 2005

We have proposed and fabricated a dual gate AlGaN/GaN high electron mobility transistor (HEMT), which exhibits the low leakage current and the high breakdown voltage for the high voltage switching applications. The additional gate between the main gate and the drain is specially designed in order to decrease the electric field concentration at the drain-side of the main gate. The leakage current of the proposed HEMT is decreased considerably and the breakdown voltage increases without sacrificing any other electric characteristics such as the transconductance and the drain current. The experimental results show that the breakdown voltage and the leakage current of proposed HEMT are 362 V and 75 nA while those of the conventional HEMT are 196 V and 428 nA, respectively.