Browse > Article

A Dual Gate AlGaN/GaN High Electron Mobility Transistor with High Breakdown Voltages  

Ha Min-Woo (서울대학교 전기공학부)
Lee Seung-Chul (서울대학교 전기공학부)
Her Jin-Cherl (서울대학교 전기공학부)
Seo Kwang-Seok (서울대학교 전기공학부)
Han Min-Koo (서울대학교 전기공학부)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.54, no.1, 2005 , pp. 18-22 More about this Journal
Abstract
We have proposed and fabricated a dual gate AlGaN/GaN high electron mobility transistor (HEMT), which exhibits the low leakage current and the high breakdown voltage for the high voltage switching applications. The additional gate between the main gate and the drain is specially designed in order to decrease the electric field concentration at the drain-side of the main gate. The leakage current of the proposed HEMT is decreased considerably and the breakdown voltage increases without sacrificing any other electric characteristics such as the transconductance and the drain current. The experimental results show that the breakdown voltage and the leakage current of proposed HEMT are 362 V and 75 nA while those of the conventional HEMT are 196 V and 428 nA, respectively.
Keywords
GaN; AlGaN; HEMT; Dual Gate; Breakdown Voltage;
Citations & Related Records
연도 인용수 순위
  • Reference
1 Yuji Koyama, Tamotsu Hashizue, and Hideki Hasegawa, 'Formation processes and properties of Schottky and ohmic contacts on n-type GaN for field effect transistor applications', Solid-State Electronics, no. 43, pp. 1483-1488, Aug., 1999   DOI   ScienceOn
2 Seung-Chul Lee, Jin-Cherl Her, Kwang-Seok Seo, and Min-Koo Han, 'High Breakdown AlGaN/GaN HEMT Employing Floating Gate', Proc, of 20th Nordic Semiconductor Meeting, pp. 45-46, Aug., 2003
3 Seung-Chul Lee, Jin-Cherl Her, Soo-Seong Kim, Min-Woo Ha, Kwang-Seok Seo, Yearn-Ik Choi, and Min-Koo Han, 'A New Vertical GaN Schottky Barrier Diode with Floating Metal Ring for High Breakdown Voltage', Proc. of 2004 International Symposium on Power Semiconductor Devices & ICs, pp. 319-322, May, 2004   DOI
4 V. A. Dmitriev, K. G. Irvine, C. H. Carter Jr., N. I. Kuznetsov, and E. V. Kalinina, 'Electric breakdown in GaN p-n junctions', Applied Physics Letter, vol. 68, no. 2, pp. 230-231, Jan., 1996   DOI
5 Wataru Saito, Yoshiharu Takada, Masahiko Kura-guchi, Kunio Tsuda, Ichiro Omura, Tsuneo Ogura, and Hiromichi Ohashi, 'High Breakdown Voltage AlGaN-GaN Power HEMT Design and High Current Density Switching Behavior', IEEE Trans. Electron Devices, vol. 50, no. 12, pp. 2528-2531, Dec., 2003   DOI   ScienceOn
6 N. Q. Zhang, S. Keller, G. Parish, S. Heikmann, S. P. DenBaars, and U. K. Mishra, 'High breakdown GaN HEMT with overlapping gate structure,' IEEE Electron Device Lett., vol. 21, pp. 421-423, Sept. 2000   DOI   ScienceOn
7 Ching-Hui Chen, Robert Coffie, K. Krishnamurthy, Stacia Keller, Mark Rodwell, and Umesh K. Mishra, 'Dual-Gate AlGaN/GaN Modulation-Doped Field Effect Transistor with Cut-Off Frequencies fT > 60 GHz', IEEE Device Letter, vol. 21, no. 12, pp. 549-551, Dec., 2000   DOI
8 S. N. Mohammad, Z. Fan, A. E. Botchkarev, W. Kim, O. Aktas, A. Salvador A, and H. Morkorc, 'Near-ideal platinum-GaN Schottky diodes', IEE Electron Letter, vol. 32, no. 6, pp. 598-599, March, 1996   DOI   ScienceOn
9 I. Daurniller, C. Kirchner, M. Karnp, K. J. Ebeling, and E. Kohn, 'Evaluation of the temperature stability of AlGaN/GaN heterostructure FET's,' IEEE Electron Device Lett., vol. 20, no. 9, pp. 448 - 450, Sep. 1999   DOI   ScienceOn