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http://dx.doi.org/10.4313/TEEM.2015.16.2.78

Sensing Properties of Ga-doped ZnO Nanowire Gas Sensor  

Lee, Sang Yeol (Department of Semiconductor Engineering, Cheongju University)
Publication Information
Transactions on Electrical and Electronic Materials / v.16, no.2, 2015 , pp. 78-81 More about this Journal
Abstract
Pure ZnO and ZnO nanowires doped with 3 wt.% Ga (‘3GZO’) were grown by pulsed laser deposition in a furnace system. The doping of Ga in ZnO nanowires was analyzed by observing the optical and chemical properties of the doped nanowires. The diameter and length of nanowires were under 200 nm and several ${\mu}m$, respectively. Changes of significant resistance were observed and the sensitivities of ZnO and 3GZO nanowires were compared. The sensitivities of ZnO and 3GZO nanowire sensors measured at 300℃ for 1 ppm of ethanol gas were 97% and 48%, respectively.
Keywords
Metal-oxide-semiconductor field-effect transistor; lateral asymmetric channel doping; transconductance; on-state drain current; channel-hot-carrier degradation;
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