• Journal of Institute of Control, Robotics and Systems
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• v.17 no.11
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• pp.1125-1131
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• 2011

This paper presents a control theoretic approach to realizing fault tolerance in asynchronous sequential circuits. The considered asynchronous circuit is assumed to work in space environment and is subject to faults caused by total ionizing dose (TID) effects. In our setting, TID effects cause permanent changes in state transition characteristics of the asynchronous circuit. Under a certain condition of reachability redundancy, it is possible to design a corrective controller so that the closed-loop system can maintain the normal behavior despite occurrences of TID faults. As a case study, the proposed control scheme is applied to an asynchronous arbiter implemented in FPGA.

• Journal of IKEEE
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• v.27 no.3
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• pp.303-307
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• 2023

In this paper, the creation of an Electron-Hole Pair due to Total Ionizing Dose (TID) effects inside the oxide of a Buried Channel Array Transistor (BCAT) device is induced, resulting in an increase in leakage current and threshold due to an increase in hole trap charge at the oxide interface. By comparing and simulating changes in voltage with the previously proposed Partial Isolation Buried Channel Array Transistor (Pi-BCAT) structure, the characteristics in leakage current and threshold voltage changed regardless of the increased oxide area of the Pi-BCAT device, compared to the asymmetrically doped BCAT structure. It shows superiority.

• Journal of Astronomy and Space Sciences
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• v.33 no.3
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• pp.229-236
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• 2016

We present proton-induced single event effects (SEEs) and γ-ray-induced total ionizing dose (TID) data for 1 Gbit lowpower double data rate synchronous dynamic random access memory (LPDDR SDRAM) fabricated on a 5 μm epitaxial layer (54 nm complementary metal-oxide-semiconductor (CMOS) technology). We compare our radiation tolerance data for LPDDR SDRAM with those of general DDR SDRAM. The data confirms that our devices under test (DUTs) are potential candidates for space flight applications.

• Journal of Electrical Engineering and Technology
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• v.12 no.4
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• pp.1619-1626
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• 2017

Electronic components that are used in high-level radiation environment require a semiconductor device having a radiation-hardened characteristic. In this paper, we proposed a radiation-hardened I-gate n-MOSFET (n-type Metal Oxide Semiconductors Field Effect Transistors) using a layout modification technique only. The proposed I-gate n-MOSFET structure is modified as an I-shaped gate poly in order to mitigate a radiation-induced leakage current in the standard n-MOSFET structure. For verification of its radiation-hardened characteristic, the M&S (Modeling and Simulation) of the 3D (3-Dimension) structure is performed by TCAD (Technology Computer Aided Design) tool. In addition, we carried out an evaluation test using a $Co^{60}$ gamma-ray source of 10kGy(Si)/h. As a result, we have confirmed the radiation-hardened level up to a total ionizing dose of 20kGy(Si).

• Bulletin of the Korean Space Science Society
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• 2005.04a
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• pp.143-147
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• 2005

This paper describes the analysis of radiation environment and effects. TID(Total ionizing Dose) and SEE(Single Event Effects) analysis are implemented. The HAUSAT-2 is a 25kg class nanosatellite which is operated at sun-synchronous orbit at an altitude 650km. Trapped proton and Electron, Solar Proton, Galactic Cosmic Ray models are considered to HAUSAT-2 radiation environment model. Total Dose-depth curve provides TID degree and components are verified by DMBP method and Sectoring analysis. SEE are analysed with Radiation Test Report. Existing Radiation Test Reports are use to SEE analysis of HAUSAT-2.

• Nuclear Engineering and Technology
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• v.54 no.12
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• pp.4422-4430
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• 2022

Studying the effects of gamma radiation on the instrumentation and control (I&C) system of a nuclear power plant is critical to the successful and reliable operation of the plant. In the accidental scenario, the adverse environment of ionizing radiation affects the performance of the I&C system and it leads to inaccurate and incomprehensible results. This paper reports the effects of gamma radiation on the AT89C51RD2, a commercial-off-the-shelf 8-bit high-performance flash microcontroller. The microcontroller, selected for the device under test for this study is used in the remote terminal unit for a nuclear power plant. The custom circuits were made to test the microcontroller under different gamma doses using a ⁶⁰Co gamma source in both ex-situ and in-situ modes. The device was exposed to a maximum dose of 1.5 kGy. Under this hostile environment, the performance of the microcontroller was studied in terms of device current and voltage changes. It was observed that the microcontroller device can operate up to a total absorbed dose of approximately 0.6 kGy without any failure or degradation in its performance.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.6
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• pp.85-90
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• 2013

In this paper, 6bit SAR ADC tolerant to ionizing radiation is presented. Radiation tolerance is achieved by using the Dummy Gate Assisted (DGA) MOSFET which was proposed to suppress the leakage current induced by ionizing radiation and its comparing sample is designed with the conventional MOSFET. The designed ADC consists of binary capacitor DAC, dynamic latch comparator, and digital logic and was fabricated using a standard 0.35um CMOS process. Irradiation was performed by Co-60 gamma ray. After the irradiation, ADC designed with the conventional MOSFET did not operate properly. On the contrary, ADC designed with the DGA MOSFET showed a little parametric degradation of which DNL was increased from 0.7LSB to 2.0LSB and INL was increased from 1.8LSB to 3.2LSB. In spite of its parametric degradation, analog to digital conversion in the ADC with DGA MOSFET was found to be possible.

• Journal of Semiconductor Engineering
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• v.1 no.3
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• pp.81-87
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• 2020

An instrumentation amplifier (IA) and an analog-to-digital converter (ADC) are essential circuit blocks for accurate and robust sensor readout systems. This paper introduces recent advances in radiation-hardening by design (RHBD) techniques applied for the sensor readout integrated circuits (IC), e.g., the three-op-amp IA and the successive-approximation register (SAR) ADC, operating against total ionizing dose (TID) and singe event effect (SEE) in harsh radiation environments. The radiation-hardened IA utilized TID monitoring and adaptive reference control to compensate for transistor parameter variations due to radiation effects. The radiation-hardened SAR ADC adopts delay-based double-feedback flip-flops to prevent soft errors which flips the data bits. Radiation-hardened IA and ADC were verified through compact model simulation, and fabricated CMOS chips were measured in radiation facilities to confirm their radiation tolerance.

• Nuclear Engineering and Technology
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• v.54 no.6
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• pp.2198-2203
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• 2022

As robotics become more sophisticated, there are a growing number of generic systems being used for routine tasks in nuclear environments to reduce risk to radiation workers. The nuclear sector has called for more commercial-off-the-shelf (COTS) devices and components to be used in preference to nuclear specific hardware, enabling robotic operations to become more affordable, reliable, and abundant. To ensure reliable operation in nuclear environments, particularly in high-gamma facilities, it is important to quantify the tolerance of electronic systems to ionizing radiation. To deliver their full potential to end-users, mobile robots require sophisticated autonomous behaviors and sensing, which requires significant computational power. A popular choice of computing system, used in low-cost mobile robots for nuclear environments, is the UP Core single board computer. This work presents estimates of the total ionizing dose that the UP Core running the Robot Operating System (ROS) can withstand, through gamma irradiation testing using a Co-60 source. The units were found to fail on average after 111.1 ± 5.5 Gy, due to faults in the on-board power management circuitry. Its small size and reasonable radiation tolerance make it a suitable candidate for robots in nuclear environments, with scope to use shielding to enhance operational lifetime.

• Nuclear Engineering and Technology
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• v.51 no.5
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• pp.1428-1435
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• 2019

The total ionizing dose (TID) and non ionizing energy loss (NIEL) effects of 100 MeV phosphorous ($P^{7+}$) and 80 MeV nitrogen ($N^{6+}$) ions on 200 GHz silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were examined in the total dose range from 1 to 100 Mrad(Si). The in-situ I-V characteristics like Gummel characteristics, excess base current (${\Delta}I_B$), net oxide trapped charge ($N_{OX}$), current gain ($h_{FE}$), avalanche multiplication (M-1), neutral base recombination (NBR) and output characteristics ($I_C-V_{CE}$) were analysed before and after irradiation. The significant degradation in device parameters was observed after $100MeV\;P^{7+}$ and $80MeV\;N^{6+}$ ion irradiation. The $100MeV\;P^{7+}$ ions create more damage in the SiGe HBT structure and in turn degrade the electrical characteristics of SiGe HBTs more when compared to $80MeV\;N^{6+}$. The SiGe HBTs irradiated up to 100 Mrad of total dose were annealed from $50^{\circ}C$ to $400^{\circ}C$ in different steps for 30 min duration in order to study the recovery of electrical characteristics. The recovery factors (RFs) are employed to analyse the contribution of room temperature and isochronal annealing in total recovery.