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http://dx.doi.org/10.5140/JASS.2016.33.3.229

Proton and γ-ray Induced Radiation Effects on 1 Gbit LPDDR SDRAM Fabricated on Epitaxial Wafer for Space Applications  

Park, Mi Young (Korea Advanced Institute of Science and Technology)
Chae, Jang-Soo (Korea Advanced Institute of Science and Technology)
Lee, Chol (Korea Advanced Institute of Science and Technology)
Lee, Jungsu (Korea Advanced Institute of Science and Technology)
Shin, Im Hyu (Korea Advanced Institute of Science and Technology)
Kim, Ji Eun (Korea Polar Research Institute)
Publication Information
Journal of Astronomy and Space Sciences / v.33, no.3, 2016 , pp. 229-236 More about this Journal
Abstract
We present proton-induced single event effects (SEEs) and γ-ray-induced total ionizing dose (TID) data for 1 Gbit lowpower double data rate synchronous dynamic random access memory (LPDDR SDRAM) fabricated on a 5 μm epitaxial layer (54 nm complementary metal-oxide-semiconductor (CMOS) technology). We compare our radiation tolerance data for LPDDR SDRAM with those of general DDR SDRAM. The data confirms that our devices under test (DUTs) are potential candidates for space flight applications.
Keywords
LPDDR; DDR; SDRAM; single event effects; total ionizing dose;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
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