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http://dx.doi.org/10.5370/JEET.2017.12.4.1619

Implementation of a Radiation-hardened I-gate n-MOSFET and Analysis of its TID(Total Ionizing Dose) Effects  

Lee, Min-Woong (Dept. of Nuclear convergence technology, Korea Atomic Energy Research Institute)
Lee, Nam-Ho (Dept. of Nuclear convergence technology, Korea Atomic Energy Research Institute)
Jeong, Sang-Hun (Dept. of Nuclear convergence technology, Korea Atomic Energy Research Institute)
Kim, Sung-Mi (Dept. of Electronic Engineering, Chonbuk National University)
Cho, Seong-Ik (Dept. of Electronic Engineering, Chonbuk National University)
Publication Information
Journal of Electrical Engineering and Technology / v.12, no.4, 2017 , pp. 1619-1626 More about this Journal
Abstract
Electronic components that are used in high-level radiation environment require a semiconductor device having a radiation-hardened characteristic. In this paper, we proposed a radiation-hardened I-gate n-MOSFET (n-type Metal Oxide Semiconductors Field Effect Transistors) using a layout modification technique only. The proposed I-gate n-MOSFET structure is modified as an I-shaped gate poly in order to mitigate a radiation-induced leakage current in the standard n-MOSFET structure. For verification of its radiation-hardened characteristic, the M&S (Modeling and Simulation) of the 3D (3-Dimension) structure is performed by TCAD (Technology Computer Aided Design) tool. In addition, we carried out an evaluation test using a $Co^{60}$ gamma-ray source of 10kGy(Si)/h. As a result, we have confirmed the radiation-hardened level up to a total ionizing dose of 20kGy(Si).
Keywords
I-gate n-MOSFET; Radiation-hardened level; Layout modification technique; Radiation-induced leakage current; Total ionizing dose;
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Times Cited By KSCI : 1  (Citation Analysis)
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