• 폴리머
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• 제29권4호
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• pp.392-398
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• 2005

Layer-by-layer(LbL) 흡착에 의한 poly(ethylene-alt-m미? anhydride) (PEMAh)/poly(4-vinyl pyridine) (P4VP) 자기조립 다층박막을 제조하였다. 자기조립 다층막을 이루는 PEMAh/P4VP 두 고분자 사이의 수소 결합과 정전기적 인력이 다층막을 이루는 원동력이라는 것이 푸리에 변환 적외선(FT-IR) 분광분석에 의해서 확인되었다. 다층막의 균일한 자기조립 과정은 PEMAh/P4VP 이중층막의 적층 수 증가에 따른 UV-vis 스펙트럼의 256 nm에서 나타나는 P4VP 특성 흡수 피크의 선형적 증가에 의해서 확인할 수 있었다. 다층막을 이루는 고분자 전해질 담지 용액의 조건 변화가 다층막 형성에 미치는 영향을 살펴보기 위하여 두 고분자 용액의 농도 및 PEMAh 담지용액의 pH를 변화시키면서 다층막을 제조하였다. 다층막의 두께, 흡착된 고분자 전해질 질량 및 표면 거칠기의 변화를 UV-vis 분광 분석, 수정진동자 미량저울(quartz crystal microbalance;QCM) 및 원자 힘 현미경(atomic force microscopy;AFM)을 이용하여 측정하였다.

• Journal of Korean Vacuum Science & Technology
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• 제3권2호
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• pp.116-120
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• 1999

Possible role of hydrogen atoms on the formation of microcrystalline silicon films was schematically investigated using a plasma enhanced chemical vapor deposition system. A layer-by-layer technique that can alternate deposition of ${\alpha}$-Si thin film and then exposure of H2 plasma was used for this end. The experimental process was extensively carried out under different hydrogen plasma times (t2) at a fixed number of 20 cycles in the deposition. structural properties, such as crystalline volume fractions and grain shapes were analyzed by using a Raman spectroscopy and a scanning electron microscopy. Electrical transports were characterized by the temperature dependence of the dark conductivity that gives rise to the calculation of activation energy (Ea). Optical absorption was measured using an ultra violet spectrophotometer, resulting in the optical energy gap (Eopt). Our experimental results indicate that both of the hydrogen etching and the structural relaxation effects on the film surface seem to be responsible for the growth mechanism of the crystallites in the ${\mu}$c-si films.

• 공업화학
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• 제16권1호
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• pp.112-116
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• 2005

본 연구에서는 생체재료 표면개질의 방법으로 유-무기 박막 형성에 관한 방법을 연구하였다. Collagen의 분해 시 얻어진 gelatin을 polystyrene 배양접시에 2 h 동안 흡착시켜 gelatin 흡착층을 형성하였다. Gelatin 흡착중에 calcium과 phosphorus 과포화 이온용액을 주입하여 calcium phosphate (CaP) 박막을 제조하였다. 박막 형성 초기에 박막의 핵들이 나타나는 것을 관찰하였다. 처리시간에 따라 CaP 박막에 성장하여 배양접시의 바닥표면 전체에 형성된 것을 볼 수 있었다. 형성된 gelatin/CaP 복합 박막의 특징은 3차원 공간에서 다공성이 높은 표면 구조를 형성하였다. Attenuated total reflectance Fourier transform infra-red spectroscopy (ATR-FTIR)을 이용하여 CaP 박막의 화학적 성질을 분석한 결과, 박막 형성 초기에는 무결정 형태의 박막이 형성되고, 시간이 경과됨에 따라 결정성이 약간 증가하지만, 결정성이 낮은 CaP에서 나타나는 흡수피크의 존재 등을 통하여 본 연구에서 제조한 CaP 박막은 poorly crystalline CaP 박막임을 확인하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.305-308
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• 2004

We present a novel process for the ultra low temperature (<150$^{\circ}C$) polycrystalline silicon (ULTPS) TFT for the flexible display applications on the plastic substrate. The sequential lateral solidification (SLS) was used for the crystallization of the amorphous silicon film deposited by rf magnetron sputtering, resulting in high mobility polycrystalline silicon (poly-Si) film. The gate dielectric was composed of thin $SiO_2$ formed by plasma oxidation and $Al_2O_3$ deposited by plasma enhanced atomic layer deposition. The breakdown field of gate dielectric on poly-Si film showed above 6.3 MV/cm. Laser activation reduced the source/drain resistance below 200 ${\Omega}$/ㅁ for n layer and 400 ${\Omega}$/ㅁ for p layer. The fabricated ULTPS TFT shows excellent performance with mobilities of 114 $cm^2$/Vs (nMOS) and 42 $cm^2$/Vs (pMOS), on/off current ratios of 4.20${\times}10^6$ (nMOS) and 5.7${\times}10^5$ (PMOS).

• 태양에너지
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• 제10권3호
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• pp.46-52
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• 1990

P층의 정공농도를 높이기 위하여 ${\delta}$-doped P층을 갖는 새로 구상된 a-Si 태양전지를 제작하였다. ${\delta}$-doped P층은 0.1-0.5 원자층의 박막 B층과 undoped a-Si의 여러층으로 구성되어 있다. B층은 광 CVD법과 열분해기법으로 증착시켰다. ${\delta}$-doped P층 박막에 대한 구조적, 광학적 및 전기적 특성을 FTIR, AES, SIMS등을 이용하여 평가하였다. 이 연구의 결과로서는 ${\delta}$-doped P층을 갖는 태양전지에 대하여 12.5%의 에너지변환효율을 달성하였다.

• 반도체디스플레이기술학회지
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• 제19권2호
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• pp.72-76
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• 2020

The author demonstrated organic ferroelectric thin-film transistors with ferroelectric materials of P(VDF-TrFE) and an amorphous oxide semiconducting In-Ga-Zn-O channel on the silicon substrates. The organic ferroelectric layers were deposited on an oxide semiconductor layer by Langmuir-Blodgett method and then annealed at 128℃ for 30min. The carrier mobility and current on/off ratio of the memory transistors showed 9 ㎠V^-1s^-1 and 6 orders of magnitude, respectively. We can conclude from the obtained results that proposed memory transistors were quite suitable to realize flexible and werable electronic applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.318-319
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• 2008

In this article, magnetic properties of multiferroic bi-layer $BiFeO_3$ (BFO)/$BaTiO_3$ (BTO) thin films were studied. It was found that the magnetization increased by the insertion of BTO buffer layer even though the interfacial stress was slightly relaxed, which indicated a coupling between the ferroelectric and ferromagnetic orders. Furthermore, with slightly increase of BFO film thickness, both BFO and BFO/BTO bi-layer films showed anisotropic magnetic properties with higher in-plane magnetization than the values measured out-of-plane. These are attributable to strain constraint effect at the interface.

• 한국전기전자재료학회논문지
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• 제20권3호
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• pp.240-244
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• 2007

We investigated the diffraction grating efficiency by the Diode Pumped Solid State(DPSS 532 nm) laser beam wavelength to improve the diffraction efficiency on $As_{40}Ge_{10}Se_{15}S_{35},\;Ag/As_{40}Ge_{10}Se_{15}S_{35}$ and $As_{40}Ge_{10}Se_{15}S_{35}/Ag/As_{40}Ge_{10}Se_{15}S_{35}$ thin film. Diffraction efficiency was obtained from DPSS laser, used (P:P)polarized laser beam on each thin films. As a result, for the laser beam intensity in $0.24mW/cm^2$, single $As_{40}Ge_{10}Se_{15}S_{35}$ thin film shows the highest value of 0.161% diffraction efficiency at 300 s and for laser beam intensity in $2.4mW/cm^2$, it was recorded with the fastest speed of 50 s(0.013%), which the diffraction grating forming speed is faster than that of $0.24mW/cm^2$ beam. $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ double layer and $As_{40}Ge_{10}Se_{15}S_{35}/Ag/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layered thin film also show the faster grating forming speed at $2.4mW/cm^2$ and higher value of diffraction efficiency at $0.24mW/cm^2$.

• 한국재료학회지
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• 제26권2호
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• pp.84-89
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• 2016

We present the rectifying and nitrogen monoxide (NO) gas sensing properties of an oxide semiconductor heterostructure composed of n-type zinc oxide (ZnO) and p-type copper oxide thin layers. A CuO thin layer was first formed on an indium-tin-oxide-coated glass substrate by sol-gel spin coating method using copper acetate monohydrate and diethanolamine as precursors; then, to form a p-n oxide heterostructure, a ZnO thin layer was spin-coated on the CuO layer using copper zinc dihydrate and diethanolamine. The crystalline structures and microstructures of the heterojunction materials were examined using X-ray diffraction and scanning electron microscopy. The observed current-voltage characteristics of the p-n oxide heterostructure showed a non-linear diode-like rectifying behavior at various temperatures ranging from room temperature to $200^{\circ}C$. When the spin-coated ZnO/CuO heterojunction was exposed to the acceptor gas NO in dry air, a significant increase in the forward diode current of the p-n junction was observed. It was found that the NO gas response of the ZnO/CuO heterostructure exhibited a maximum value at an operating temperature as low as $100^{\circ}C$ and increased gradually with increasing of the NO gas concentration up to 30 ppm. The experimental results indicate that the spin-coated ZnO/CuO heterojunction structure has significant potential applications for gas sensors and other oxide electronics.

• 한국전기전자재료학회논문지
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• 제19권12호
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• pp.1140-1143
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• 2006

We report on the fabrication of P3HT-based thin-film transistors (TFTs) for liquid crystal display that consist of $NiO_x$, poly-vinyl phenol (PVP), and Ni for the source-drain (S/D) electrodes, gate dielectric layer, and gate electrode, respectively The $NiO_x$ S/D electrodes of which the work function is well matched to that of P3HT are deposited on a P3HT channel by electron-beam evaporation of NiO powder. The maximum saturation current of our P3HT-based TFT is about $15{\mu}A$ at a gate bias of -30 V showing a high field effect mobility of $0.079cm^2/Vs$ in the dark, and the on/off current ratio of our TFT is about $10^5$. It is concluded that jointly adopting $NiO_x$ for the S/D electrodes and PVP for gate dielectric realizes a high-quality P3HT-based TFT.