한국정보디스플레이학회:학술대회논문집
- 2004.08a
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- Pages.305-308
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- 2004
Ultra low temperature polycrystalline silicon thin film transistor using sequential lateral solidification and atomic layer deposition techniques
- Lee, J.H. (Basic Research Lab., ETRI) ;
- Kim, Y.H. (Basic Research Lab., ETRI) ;
- Sohn, C.Y. (Basic Research Lab., ETRI) ;
- Lim, J.W. (Basic Research Lab., ETRI) ;
- Chung, C.H. (Basic Research Lab., ETRI) ;
- Park, D.J. (Basic Research Lab., ETRI) ;
- Kim, D.W. (Basic Research Lab., ETRI) ;
- Song, Y.H. (Basic Research Lab., ETRI) ;
- Yun, S.J. (Basic Research Lab., ETRI) ;
- Kang, K.Y. (Basic Research Lab., ETRI)
- Published : 2004.08.23
Abstract
We present a novel process for the ultra low temperature (<150
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