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P(VDF-TrFE) Thin Film Transistors using Langmuir-Blodgett Method  

Kim, Kwang-Ho (Division of Energy & Optical Technology Convergence, Cheongju University)
Publication Information
Journal of the Semiconductor & Display Technology / v.19, no.2, 2020 , pp. 72-76 More about this Journal
Abstract
The author demonstrated organic ferroelectric thin-film transistors with ferroelectric materials of P(VDF-TrFE) and an amorphous oxide semiconducting In-Ga-Zn-O channel on the silicon substrates. The organic ferroelectric layers were deposited on an oxide semiconductor layer by Langmuir-Blodgett method and then annealed at 128℃ for 30min. The carrier mobility and current on/off ratio of the memory transistors showed 9 ㎠V-1s-1 and 6 orders of magnitude, respectively. We can conclude from the obtained results that proposed memory transistors were quite suitable to realize flexible and werable electronic applications.
Keywords
Langmuir-Blodgett; Nonvolatile Memory; Organic Ferroelectric; P(VDF-TrFE); Thin Film Transistor;
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