[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.4313/JKEM.2007.20.3.240

Holographic Data Grating Formation of As₄₀Ge₁₀Se₁₅S₃₅ Single Layer, Ag/As₄₀Ge₁₀Se₁₅S₃₅ Double Layer and As₄₀Ge₁₀Se₁₅S₃₅/Ag/As₄₀/Ge₁₀Se₁₅S₃₅ Multi-layer Thin Films with the DPSS Laser

Ju, Long-Yun (광운대학교 전자재료공학과)
Chung, Hong-Bay (광운대학교 전자재료공학과)

Publication Information

Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.20, no.3, 2007 , pp. 240-244 More about this Journal

Abstract

We investigated the diffraction grating efficiency by the Diode Pumped Solid State(DPSS 532 nm) laser beam wavelength to improve the diffraction efficiency on $As_{40}Ge_{10}Se_{15}S_{35},\;Ag/As_{40}Ge_{10}Se_{15}S_{35}$ and $As_{40}Ge_{10}Se_{15}S_{35}/Ag/As_{40}Ge_{10}Se_{15}S_{35}$ thin film. Diffraction efficiency was obtained from DPSS laser, used (P:P)polarized laser beam on each thin films. As a result, for the laser beam intensity in $0.24mW/cm^2$ , single $As_{40}Ge_{10}Se_{15}S_{35}$ thin film shows the highest value of 0.161% diffraction efficiency at 300 s and for laser beam intensity in $2.4mW/cm^2$ , it was recorded with the fastest speed of 50 s(0.013%), which the diffraction grating forming speed is faster than that of $0.24mW/cm^2$ beam. $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ double layer and $As_{40}Ge_{10}Se_{15}S_{35}/Ag/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layered thin film also show the faster grating forming speed at $2.4mW/cm^2$ and higher value of diffraction efficiency at $0.24mW/cm^2$ .

Keywords

DPSS laser; AsGeSeS; (P:P)polarized; Diffraction efficiency AsGeSeS/Ag/AsGeSeS;

Citations & Related Records

Reference

1	Y. Utsugi and S. Zembutsu, 'Diffraction efficiency of relief-type gratings in amorphous chalcogenide films', Optics Communications, Vol. 17, No. 1, p. 28, 1976 DOI ScienceOn
2	T. V. Galstyan and M. A. Duguay, 'Photoinduced self-developing relief grating in thin film chalcogenide $As_{2}S_{3}$ galsses', Journal of Lightwave Technology, Vol. 15, No. 8, p. 1343, 1997 DOI ScienceOn
3	J. Teteris and M. Reinfelde, 'Holographic recording in amorphous chalcogenide semiconductor thin films', Journal of None-crystalline Solids, Vol. 326&327, p. 494, 2003
4	S. J. Jang, C. H. Yeo, J. I. Park, H. Y. Lee, and H. B. Chung, 'The photoinduced anisotropy(PA) by Ag polarized-photodoping in amorphous chalcogenide thin films', J. of KIEEME (in Korean), Vol. 13, No. 6, p. 533, 2000
5	J. Y. Chun, S. H. Park, H. Y. Lee, and H. B. Chung, 'Estimation of the anisotropy magnitude in amorphous $As_{40}Ge_{10}S_{35}Se_{15}$ thin films by an interference method', J. of KIEEME (in Korean), Vol. 11, No. 9, p. 746, 1998
6	Y. Ohmachi and T. Igo, 'Laser-induced refractive-index change in As-S-Se glasses', Appl. Phys. Lett., Vol. 20, No. 12, p. 506, 1972
7	T. Igo and Y. Toyoshima, 'A reversible optical change in the As-Se-Geglasses', Jpn. J. Appl. Phys., Vol. 11, p. 117, 1972 DOI
8	S. J. Zilker, T. Bieringer, D. Haarer, R. S. Stein, J. W. van Egmond, and S. G. Kostromine, 'Holographic data storage in amorphous polymers', Adv. Mater., Vol. 10, No. 11, p. 855, 1998 DOI ScienceOn
9	S. J. Jang, J. H. Park, C. H. Shon, and H. B. Chung, 'Polarization recording and reconstruction in the chalcogenide As-Ge-Se-S thin films', J. of the Kor. Inst. Electrical & Material Eng., Vol. 13, No. 9, p. 781, 2000
10	J. H. Park, J. I. Park, E. S. Kim, and H. B. Chung, 'Holographic grating formation by wet etching of amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ thin film', Jpn. J. Appl. Phys., Vol. 41, p. 4271, 2002 DOI
11	C. H. Yeo, S. J. Jang, J. I. Park, H. Y. Lee, and H. B. Chung, 'The measurement on diffraction efficiency in polarization holography using amorphous chalcogenide thin films', J. of KIEEME (in Korean), Vol. 12, No. 12, p. 1192, 1999