Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Magnetic Properties of Multiferroic $BiFeO_3/BaTiO_3$ Bi-layer Thin Films

  • Yang, P. (School of Materials Science and Engineering, Yeungnam University) ;
  • Byun, S.H. (School of Materials Science and Engineering, Yeungnam University) ;
  • Kim, K.M. (School of Materials Science and Engineering, Yeungnam University) ;
  • Lee, Y.H. (School of Materials Science and Engineering, Yeungnam University) ;
  • Lee, J.Y. (School of Materials Science and Engineering, Yeungnam University) ;
  • Zhu, J.S. (National Laboratory of Solid State Microstructures, Physics Department, Nanjing University) ;
  • Lee, H.Y. (School of Materials Science and Engineering, Yeungnam University)
  • Published : 2008.06.19
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Abstract

In this article, magnetic properties of multiferroic bi-layer $BiFeO_3$ (BFO)/$BaTiO_3$ (BTO) thin films were studied. It was found that the magnetization increased by the insertion of BTO buffer layer even though the interfacial stress was slightly relaxed, which indicated a coupling between the ferroelectric and ferromagnetic orders. Furthermore, with slightly increase of BFO film thickness, both BFO and BFO/BTO bi-layer films showed anisotropic magnetic properties with higher in-plane magnetization than the values measured out-of-plane. These are attributable to strain constraint effect at the interface.

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