• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(5)
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• pp.33-36
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• 2001

An automatic TCXO frequency-temperature test apparatus was firstly developed by using thermoelectric device may. The developed system swing stably the test temperature range from -40$^{\circ}C$ to +80$^{\circ}C$ for about 1 hour The rising temperature ratio was fairly linear with time in this test temperature range. The temperature could be controlled error in error range of ${\pm}$0.05$^{\circ}C$ in this system. The frequency-Temperature properties of TCXO or the thermoelectric properties of other electric device.

• Transactions on Electrical and Electronic Materials
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• 제17권6호
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• pp.329-334
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• 2016

In this work, the temperature dependence of electrical parameters of nanoscale SOI (silicon-on-insulator) TG (triple gate) n-FinFET (n-channel Fin field effect transistor) was investigated. Numerical device simulator $ATLAS^{TM}$ was used to construct, examine, and simulate the structure in three dimensions with different models. The drain current, transconductance, threshold voltage, subthreshold swing, leakage current, drain induced barrier lowering, and on/off current ratio were studied in various biasing configurations. The temperature dependence of the main electrical parameters of a SOI TG n-FinFET was analyzed and discussed. Increased temperature led to degraded performance of some basic parameters such as subthreshold swing, transconductance, on-current, and leakage current. These results might be useful for further development of devises to strongly down-scale the manufacturing process.

• 대한전자공학회논문지SD
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• 제46권4호
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• pp.21-27
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• 2009

본 연구에서는 고온에서 Schottky barrier SOI nMOS 및 pMOS의 전류-전압 특성을 분석하기 위해서 Er 실리사이드를 갖는 SB-SOI nMOSFET와 Pt 실리사이드를 갖는 SB-SOI pMOSFET를 제작하였다. 게이트 전압에 따른 SB-SOI nMOS 및 pMOS의 주된 전류 전도 메카니즘을 온도에 따른 드레인 전류 측정 결과를 이용하여 설명하였다. 낮은 게이트 전압에서는 온도에 따라 열전자 방출 및 터널링 전류가 증가하므로 드레인 전류가 증가하고 높은 게이트 전압에서는 드리프트 전류가 감소하여 드레인 전류가 감소하였다. 고온에서 ON 전류가 증가하지만 드레인으로부터 채널영역으로의 터널링 전류 증가로 OFF 전류가 더 많이 증가하게 되므로 ON/OFF 전류비는 감소함을 알 수 있었다. 그리고 SOI 소자나 bulk MOSFET 소자에 비해 SB-SOI nMOS 및 pMOS의 온도에 따른 문턱전압 변화는 작았고 subthreshold swing은 증가하였다.

• 한국광물학회지
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• 제30권4호
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• pp.205-217
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• 2017

간접 탄산화(indirect method) 및 양이온 공급원으로 사문암(serpentinite)을 이용하여 광물탄산화 연구를 수행하였다. 이산화탄소와 사문암 내 알칼리 토금속(칼슘과 마그네슘)의 탄산화 반응을 통해 고순도의 탄산칼슘과 탄산마그네슘을 합성할 수 있었다. 마그네슘 추출을 위해 황산암모늄을 사용하였고 Mg 추출률 향상을 위해 황산암모늄 농도, 반응온도 및 사문암과 추출 용매의 비(고액비) 등 여러 반응 변수를 검토하였다. 본 연구로부터 2 M 황산암모늄을 사용하여 $300^{\circ}C$ 반응온도에서 고액비(5 g/66 mL) 실험을 진행한 경우 약 80 wt% 이상의 Mg를 얻을 수 있었다. Mg 추출률은 추출 용매 농도 및 반응온도와 비례하여 증가하였다. 사문암의 Mg 추출 과정에서 얻어진 암모니아($NH_3$)는 회수하여 탄산화 과정에서 필요한 pH 복원제(pH swing agent)로 활용하였다. 본 연구를 통해 약 1.78 M 암모니아를 회수할 수 있었고 지구화학 모델링을 통해 사문암의 Mg 추출 과정의 핵심 단계를 해석하고자 하였다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 추계학술대회
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• pp.442-447
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• 2003

The characteristics of instantaneous wall-surface temperature of impinging plate in case of ultra high pressure injection have been measured and analyzed by using thin film instantaneous temperature probe and ultra high pressure injection equipment. The decreasing rate of temperature was greater in case of higher temperature of impinging plate. Temperature drop was largest at center of piston and it was slight for others. Instantaneous temperature decreases rapidly with increasing injection pressure. But above 2,500bar of injection pressure, the decreasing rates are slightly affected by increasing injection pressure.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.577-580
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• 1998

This paper presents the characteristics of each MOS device and Bipolar device, then investigates about how these devices take effect on BiCMOS inverter from 300K to 470K. The turn-off and Logic swing characteristics of BiCMOS inverter are degraded by the electrical characteristics of the MOS to around 400K, but over that temperature enhanced by the characteristics of the Bipolar transistor.

• 한국자동차공학회논문집
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• 제4권1호
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• pp.208-217
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• 1996

Instantaneous surface temperature and unsteady heat flux of intake and exhaust valve in methanol fueled engine were investigate as a function of compression ratio and engine speed. To accomplish this purpose, the instantaneous temperature sensor was designed and it was installed into three point of intake and exhaust valve head to measure unsteady temperature. The unsteady heat flux at valves was evaluated using one dimensional heat conduction equation with the valve head temperature and temperature gradient. And also mean heat flux of intake and exhaust valve for each stroke were evaluated as a function of engine speed.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권1호
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• pp.43-51
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• 2006

80-nm self-aligned n-and p-channel I-MOS devices were demonstrated by using a novel fabrication method featuring double sidewall spacer, elevated drain structure and RTA process. The fabricated devices showed a normal transistor operation with extremely small subthreshold swing less than 12.2 mV/dec at room temperature. The n- and p-channel I-MOS devices had an ON/OFF current of 394.1/0.3 ${\mu}A$ and 355.4/8.9 ${\mu}A$ per ${\mu}m$, respectively. We also investigated some critical issues in device design such as the junction depth of the source extension region and the substrate doping concentration.

• 한국식품조리과학회:학술대회논문집
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• 한국식품조리과학회 1993년도 춘계 학술심포지움
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• pp.149-159
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• 1993

The concept of Solid-State Fermentation is briefly explained in comparison to other fermentation principles, and several types of fermenters are presented. A recently developed "Swing Reactor" for SSF is shown. When inoculated on rice, the mould Monascus purpureus forms red pigments, Which can be used as food colors (Ang-kak, Red Rice). By Response Surface Methodology, serveral factors have been optimized for maximal red colour formation. Showing that presoaking time of rice, pH of soaking water, age of preculture and inoculum size were not of importance within the observed limits. For a fermentation time of 7 days, start humidity is optimal at 34% and temperature is optimal at 28.8 C. These results of small scale fermentation could be transferred to the Swing Reactor.

• Transactions on Electrical and Electronic Materials
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• 제16권4호
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• pp.187-189
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• 2015

A charge-trap flash (CTF) thin film transistor (TFT) memory is proposed at a low-temperature process (≤ 450℃). The memory cell consists of a sputtered oxide-nitride-oxide (ONO) gate dielectric and Schottky barrier (SB) source/drain (S/D) junctions using nickel silicide. These components enable the ultra-low-temperature process to be successfully achieved with the ONO gate stacks that have a substrate temperature of room temperature and S/D junctions that have an annealing temperature of 200℃. The silicidation process was optimized by measuring the electrical characteristics of the Ni-silicided Schottky diodes. As a result, the Ion/Ioff current ratio is about 1.4×10⁵ and the subthreshold swing and field effect mobility are 0.42 V/dec and 14 cm²/V·s at a drain voltage of −1 V, respectively.