Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Temperature Dependence of Electrical Parameters of Silicon-on-Insulator Triple Gate n-Channel Fin Field Effect Transistor

  • Boukortt, Nour El Islam (Department of Electrical Engineering, University of Mostaganem, Dipartimento Di Scienze Matematiche E Informatiche, Scienze Fisiche E Scienze Della Terra, University of Messina) ;
  • Hadri, Baghdad (Department of Electrical Engineering, University of Mostaganem) ;
  • Caddemi, Alina (Department of Engineering, University of Messina) ;
  • Crupi, Giovanni (Department of Engineering, University of Messina) ;
  • Patane, Salvatore (Dipartimento Di Scienze Matematiche E Informatiche, Scienze Fisiche E Scienze Della Terra, University of Messina)
  • Received : 2015.11.17
  • Accepted : 2016.07.12
  • Published : 2016.12.25
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Abstract

In this work, the temperature dependence of electrical parameters of nanoscale SOI (silicon-on-insulator) TG (triple gate) n-FinFET (n-channel Fin field effect transistor) was investigated. Numerical device simulator $ATLAS^{TM}$ was used to construct, examine, and simulate the structure in three dimensions with different models. The drain current, transconductance, threshold voltage, subthreshold swing, leakage current, drain induced barrier lowering, and on/off current ratio were studied in various biasing configurations. The temperature dependence of the main electrical parameters of a SOI TG n-FinFET was analyzed and discussed. Increased temperature led to degraded performance of some basic parameters such as subthreshold swing, transconductance, on-current, and leakage current. These results might be useful for further development of devises to strongly down-scale the manufacturing process.

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