• Title/Summary/Keyword: Super-P

Search Result 461, Processing Time 0.027 seconds

An Experimental Study on the Mechanical Properties of Super- Workable Concrete (다짐이 필요없는 콘크리트의 역학적 특성에 관한 실험적 연구)

  • 이준구;윤상대;박광수;이성행;배수호
    • Proceedings of the Korea Concrete Institute Conference
    • /
    • 1997.04a
    • /
    • pp.177-185
    • /
    • 1997
  • The purpose of this study is to investigate the mechanical properties of super-workable concrete using O.P.C., blast-furnace slag, and fly ash respectively. For this purpose, after determining the optimum mix proportion of super-workable concrete according to unit weight of binder and percentage of fine aggregate respectively, mechanical properties of super-workable concrete such as compressive, tensile and flexural strength as well as elastic modules were tested and analyzed. Also, the mechanical performances of super-workable concrete were compared with those of high-strength concrete with equal mix proportion of concrete. As a result, super-workable concrete have an excellent mobility, placeability, and segregation-resistance, but the strength of super-workable concrete was shown to be somewhat lower than that of high-strength concrete with equal mix proportion of concrete.

  • PDF

Inhibition of c-FLIP by RNAi Enhances Sensitivity of the Human Osteogenic Sarcoma Cell Line U2OS to TRAILInduced Apoptosis

  • Zhang, Ya-Ping;Kong, Qing-Hong;Huang, Ying;Wang, Guan-Lin;Chang, Kwen-Jen
    • Asian Pacific Journal of Cancer Prevention
    • /
    • v.16 no.6
    • /
    • pp.2251-2256
    • /
    • 2015
  • To study effects of cellular FLICE (FADD-like IL-$1{\beta}$-converting enzyme)-inhibitory protein (c-FLIP) inhibition by RNA interference (RNAi) on sensitivity of U2OS cells to tumor necrosis factor (TNF)-related apoptosis-inducing ligand (TRAIL)-induced apoptosis, plasmid pSUPER-c-FLIP-siRNA was constructed and then transfected into U2OS cells. A stable transfection cell clone U2OS/pSUPER-c-FLIP-siRNA was screened from the c-FLIP-siRNA transfected cells. RT-PCR and Western blotting were applied to measure the expression of c-FLIP at the levels of mRNA and protein. The results indicated that the expression of c-FLIP was significantly suppressed by the c-FLIP-siRNA in the cloned U2OS/pSUPER-c-FLIP-siRNA as compared with the control cells of U2OS/pSUPER. The cloned cell line of U2OS/pSUPER-c-FLIP-siRNA was further examined for TRAILinduced cell death and apoptosis in the presence of a pan-antagonist of inhibitor of apoptosis proteins (IAPs) AT406, with or without 4 hrs pretreatment with rocaglamide, an inhibitor of c-FLIP biosynthesis, for 24 hrs. Cell death effects and apoptosis were measured by the methods of MTT assay with 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide and flow cytometry, respectively. The results indicated that TRAIL-induced cell death in U2OS/pSUPER-c-FLIP-siRNA was increased compared with control cells U2OS/pSUPER in the presence or absence of AT406. Flow cytometry indicated that TRAIL-induced cell death effects proceeded through cell apoptosis pathway. However, in the presence of rocaglamide, cell death or apoptotic effects of TRAIL were similar and profound in both cell lines, suggesting that the mechanism of action for both c-FLIP-siRNA and rocaglamide was identical. We conclude that the inhibition of c-FLIP by either c-FLIP-siRNA or rocaglamide can enhance the sensitivity of U2OS to TRAIL-induced apopotosis, suggesting that inhibition of c-FLIP is a good target for anti-cancer therapy.

The Line n-sigraph of a Symmetric n-sigraph-V

  • Reddy, P. Siva Kota;Nagaraja, K.M.;Geetha, M.C.
    • Kyungpook Mathematical Journal
    • /
    • v.54 no.1
    • /
    • pp.95-101
    • /
    • 2014
  • An n-tuple ($a_1,a_2,{\ldots},a_n$) is symmetric, if $a_k$ = $a_{n-k+1}$, $1{\leq}k{\leq}n$. Let $H_n$ = {$(a_1,a_2,{\ldots},a_n)$ ; $a_k$ ${\in}$ {+,-}, $a_k$ = $a_{n-k+1}$, $1{\leq}k{\leq}n$} be the set of all symmetric n-tuples. A symmetric n-sigraph (symmetric n-marked graph) is an ordered pair $S_n$ = (G,${\sigma}$) ($S_n$ = (G,${\mu}$)), where G = (V,E) is a graph called the underlying graph of $S_n$ and ${\sigma}$:E ${\rightarrow}H_n({\mu}:V{\rightarrow}H_n)$ is a function. The restricted super line graph of index r of a graph G, denoted by $\mathcal{R}\mathcal{L}_r$(G). The vertices of $\mathcal{R}\mathcal{L}_r$(G) are the r-subsets of E(G) and two vertices P = ${p_1,p_2,{\ldots},p_r}$ and Q = ${q_1,q_2,{\ldots},q_r}$ are adjacent if there exists exactly one pair of edges, say $p_i$ and $q_j$, where $1{\leq}i$, $j{\leq}r$, that are adjacent edges in G. Analogously, one can define the restricted super line symmetric n-sigraph of index r of a symmetric n-sigraph $S_n$ = (G,${\sigma}$) as a symmetric n-sigraph $\mathcal{R}\mathcal{L}_r$($S_n$) = ($\mathcal{R}\mathcal{L}_r(G)$, ${\sigma}$'), where $\mathcal{R}\mathcal{L}_r(G)$ is the underlying graph of $\mathcal{R}\mathcal{L}_r(S_n)$, where for any edge PQ in $\mathcal{R}\mathcal{L}_r(S_n)$, ${\sigma}^{\prime}(PQ)$=${\sigma}(P){\sigma}(Q)$. It is shown that for any symmetric n-sigraph $S_n$, its $\mathcal{R}\mathcal{L}_r(S_n)$ is i-balanced and we offer a structural characterization of super line symmetric n-sigraphs of index r. Further, we characterize symmetric n-sigraphs $S_n$ for which $\mathcal{R}\mathcal{L}_r(S_n)$~$\mathcal{L}_r(S_n)$ and $$\mathcal{R}\mathcal{L}_r(S_n){\sim_=}\mathcal{L}_r(S_n)$$, where ~ and $$\sim_=$$ denotes switching equivalence and isomorphism and $\mathcal{R}\mathcal{L}_r(S_n)$ and $\mathcal{L}_r(S_n)$ are denotes the restricted super line symmetric n-sigraph of index r and super line symmetric n-sigraph of index r of $S_n$ respectively.

Electrical Characteristics of Super Junction MOSFET According to Trench Etch Angle of P-pillar (P-pillar 식각 각도에 따른 Super Junction MOSFET의 전기적 특성 분석에 관한 연구)

  • Kang, Ey Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.27 no.8
    • /
    • pp.497-500
    • /
    • 2014
  • In this paper, we analyze electrical characteristics of n/p-pillar layer according to trench angle which is the most important characteristics of SJ MOSFET and core process. Because research target is 600 V class SJ MOSFET, so conclusively trench angle deduced 89.5 degree to implement the breakdown voltage 750 V with 30% margin rate. we found that on resistance is $22mohm{\cdot}cm^2$ and threshold voltage is 3.5 V. Moreover, depletion layer of electric field distribution also uniformly distributes.

H-V -SUPER MAGIC DECOMPOSITION OF COMPLETE BIPARTITE GRAPHS

  • KUMAR, SOLOMON STALIN;MARIMUTHU, GURUSAMY THEVAR
    • Communications of the Korean Mathematical Society
    • /
    • v.30 no.3
    • /
    • pp.313-325
    • /
    • 2015
  • An H-magic labeling in a H-decomposable graph G is a bijection $f:V(G){\cup}E(G){\rightarrow}\{1,2,{\cdots},p+q\}$ such that for every copy H in the decomposition, $\sum{_{{\upsilon}{\in}V(H)}}\;f(v)+\sum{_{e{\in}E(H)}}\;f(e)$ is constant. f is said to be H-V -super magic if f(V(G))={1,2,...,p}. In this paper, we prove that complete bipartite graphs $K_{n,n}$ are H-V -super magic decomposable where $$H{\sim_=}K_{1,n}$$ with $n{\geq}1$.

The Electrical Characteristics of Power FET using Super Junction for Advance Power Modules

  • Kang, Ey Goo
    • Journal of IKEEE
    • /
    • v.17 no.3
    • /
    • pp.360-364
    • /
    • 2013
  • The maximum breakdown voltage's characteristic within the Super Junction MOSFET structure comes from N-Drift and P-Pillar's charge balance. By developing P-Pillar from Planar MOSFET, it was confirmed that the breakdown voltage is improved through charge balance, and by setting the gate voltage at 10V, the characteristic comparisons of Planar MOSFET and Super Junction MOSFET are shown in picture 6. The results show that it had the same breakdown voltage as Planar MOSFET which increased temperature resistance by 87.4% at $.019{\Omega}cm^2$ which shows that by the temperature resistance increasing, the power module's power dissipation improved.

Efficient Flooding Algorithm for Mobile P2P Systems using Super Peer (슈퍼피어를 이용한 모바일 P2P시스템을 위한 효율적인 플러딩 알고리즘)

  • Kang, So-Young;Lee, Kwang-Jo;Yang, Sung-Bong
    • Journal of KIISE:Computing Practices and Letters
    • /
    • v.16 no.2
    • /
    • pp.217-221
    • /
    • 2010
  • As the appearances of various new mobile devices and the explosive growth of mobile device users, many researches related to mobile P2P systems have been proceeded actively. In this paper, we propose a new search algorithm for the double-layered super peer system in the mobile environment. For the proposed search algorithm, we divide the entire experiment region into a grid of cells, each of which has the same size. The grid is configured properly by considering the communication range of a mobile device and the number of peers in the system. The proposed search algorithm is a partial flooding search method based on the directions of cells involved with the search. It reduces successfully the network traffic, but shows a low search hit ratio. To enhance the search hit ratio, we introduce a bridge-peer table for a super peer and utilize an n-way search. The experimental results show that the proposed algorithm made an average of 20~30% reduction in the number of message packets over the double-layered system. The success ratio was also improved about 2~5% over the double-layered system.

2G HTS wire with enhanced engineering current density attained through the deposition of HTS layer with increased thickness

  • Markelov, A.;Valikov, A.;Chepikov, V.;Petrzhik, A.;Massalimov, B.;Degtyarenko, P.;Uzkih, R.;Soldatenko, A.;Molodyk, A.;Sim, Kideok;Hwang, Soon
    • Progress in Superconductivity and Cryogenics
    • /
    • v.21 no.4
    • /
    • pp.29-33
    • /
    • 2019
  • 2G HTS wire with high engineering current density is desired for applications where compact, high power density superconducting equipment is important. We have succeeded in enhancing engineering current density of commercial SuperOx 2G HTS wire based on GdBCO by increasing the HTS layer thickness without fast degradation of the HTS film microstructure. This was possible after improving the temperature uniformity along the HTS film deposition zone. In particular, the wire engineering current density was increased from 700-770 A/㎟ (for a 65 ㎛-thick wire without stabilisation) or 430-480 A/㎟ (for a 105 ㎛-thick stabilised wire) at the beginning of this study to almost 1200 A/㎟ (for a 67 ㎛-thick wire without stabilisation) or 770 A/㎟ (for a 107 ㎛-thick stabilised wire) at completion of this study.

Study on Latch Up Characteristics of Super Junction MOSFET According to Trench Etch Angle (Trench 식각각도에 따른 Super Juction MOSFET의 래치 업 특성에 관한 연구)

  • Chung, Hun Suk;Kang, Ey Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.27 no.9
    • /
    • pp.551-554
    • /
    • 2014
  • This paper was showed latch up characteristics of super junction power MOSFET by parasitic thyristor according to trench etch angle. As a result of research, if trench etch angle of super junction MOSFET is larger, we obtained large latch up voltage. When trench etch angle was $90^{\circ}$, latch up voltage was more 50 V. and we got 700 V breakdown voltage. But we analyzed on resistance. if trench etch angle of super junction MOSFET is larger, we obtained high on resistance. Therefore, we need optimal point by simulation and experiment for solution of trade off.

Developing of Super Junction MOSFET According to Charge Imbalance Effect (전하 불균형 효과를 고려한 Super Junction MOSFET 개발에 관한 연구)

  • Kang, Ey Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.27 no.10
    • /
    • pp.613-617
    • /
    • 2014
  • This paper was analyzed electrical characteristics of super junction power MOSFET considering to charge imbalance. We extracted optimal design and process parameter at -15% of charge imbalance. Considering extracted design and process parameters, we fabricated super junction MOSFET and analyzed electrical characteristics. We obtained 600~650 V breakdown voltage, $224{\sim}240m{\Omega}$ on resistance. This paper was showed superior on resistance of super junction MOSFET. We can use for automobile industry.