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Electrical Characteristics of Super Junction MOSFET According to Trench Etch Angle of P-pillar

P-pillar 식각 각도에 따른 Super Junction MOSFET의 전기적 특성 분석에 관한 연구

  • Kang, Ey Goo (Department of Photovolatic Engineering, Far East University)
  • Received : 2014.07.17
  • Accepted : 2014.07.24
  • Published : 2014.08.01

Abstract

In this paper, we analyze electrical characteristics of n/p-pillar layer according to trench angle which is the most important characteristics of SJ MOSFET and core process. Because research target is 600 V class SJ MOSFET, so conclusively trench angle deduced 89.5 degree to implement the breakdown voltage 750 V with 30% margin rate. we found that on resistance is $22mohm{\cdot}cm^2$ and threshold voltage is 3.5 V. Moreover, depletion layer of electric field distribution also uniformly distributes.

Keywords

References

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