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http://dx.doi.org/10.4313/JKEM.2014.27.8.497

Electrical Characteristics of Super Junction MOSFET According to Trench Etch Angle of P-pillar  

Kang, Ey Goo (Department of Photovolatic Engineering, Far East University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.27, no.8, 2014 , pp. 497-500 More about this Journal
Abstract
In this paper, we analyze electrical characteristics of n/p-pillar layer according to trench angle which is the most important characteristics of SJ MOSFET and core process. Because research target is 600 V class SJ MOSFET, so conclusively trench angle deduced 89.5 degree to implement the breakdown voltage 750 V with 30% margin rate. we found that on resistance is $22mohm{\cdot}cm^2$ and threshold voltage is 3.5 V. Moreover, depletion layer of electric field distribution also uniformly distributes.
Keywords
Super juction; n-pillar; p-pillar; On-resistance; Breakdown voltage; Trench angle; Power devices; Power MOSFET; Epi-layer;
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