• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.597-600
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• 2006

The silver gate and source/drain electrodes for an a-Si thin film transistor were fabricated by the selective electroless plating (SELP) process. Relevant physical properties including taper angle, uniformity and resistivity are investigated. The Ag layer was about 150nm to 250nm thick, the resistivity less than $3{\times}10^{-6}$ Ohm-cm and the taper angle 45'-60' and the nonuniformity less than 10% on G2 substrates. The transfer characteristics with the Ag gate, and source/drain electrodes respectively possessed good field effect mobility similar to conventionally fabricated a-Si TFTs. This process provided low resistivity, low cost and ease of processing.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.273-274
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• 2008

According to current RRC procedures, network does not know either how long it will take the RRC reconfiguration message (such as Physical Channel Reconfiguration (PCR)/Transport Channel Reconfiguration (TCR)/Radio Bearer Reconfiguration (RBR)) to be transmitted over the source cell or how long the UE will take to reconfigure on receiving the message, it has to assume the worst-case. Thus, it typically indicates a conservative activation time, leading to potentially large interruption for voice traffic, particularly if the source cell signal strength has degraded. This proposals allow the UE to receive the serving cell related information (carried today in PCR/RBR/TCR message) in an Active Set Update message.

• Journal of the Korea Computer Industry Society
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• v.2 no.9
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• pp.1209-1218
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• 2001

In this dissertation, we propose a dynamic source routing protocol supporting asymmetric path for mobile ad hoc networks. At present, the existing dynamic source routing protocol supports only symmetric path for routing. However, in fact, there can exist unidirectional links due to asymmetric property of mobile termenals or current wireless environment. Thus, we implement a mobile ad hoc routing protocol supporting asymmetric routing path, which is fit for more general wireless environment. Especially, the proposed protocol uses an improved multipath maintenance method in order to perform rapid route reconfiguration when route error due to mobility is detected.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 1997.04a
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• pp.545-550
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• 1997

It is well known that Statistical Energy Analysis(SEA) is one of very attractive analytical methods to solve shipboard noise problems. With reasonable successes, many applications of SEA to shipboard noise prediction have been reported. However when one wishes to obtain theoretical predictions by using SEA in practical systems, he will find difficulty in modeling of source systems, that is, foundations where to place main engine, generator, compressor, and so on. Also, he will find that it is hard to determine the amount of power flow from machinery to structures. In this paper, SEA of a simple foundation model was carried out using the estimated amount of power flow from source; the estimated mobility method. The comparison between the estimated and measured results is presented. That comparison shows a method to get structure-borne noise power from the combination of machinery and foundation. This prediction method gave a good results for a air-compressor mounted on a model foundation. The method is expected to give a reasonable power output in practical problems.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.443-443
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• 2012

We fabricated a-IGZO TFT with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. Enhanced electrical device performance of a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = = 400/50 mm) was achieved with a subs-threshold swing of 3.78 V/dec, a minimum off-current of 10-12 A, a threshold voltage of 1.80 V, a field effect mobility of 10.86 cm2/Vs, and an on/off ration of 9x109. It demonstrated the potential application of the AZO/Ag/AZO film as a promising S/D contact material for the fabrication of the high performance TFTs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.271-272
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• 2008

We fabricated a pentacene thin-film transistor with Ni/Ag source/drain electrodes. Also, we obtained similar electrical characteristics as compared with source/drain electrode with Au. This device was found to have a field-effect mobility of about 0.021 $cm^2$/Vs, a threshold voltage of -5, -7 V, an subthreshold slope of 2.0, 4.5 V/decade, and an on!off current ratio of $3.6\times10^5$, $2.0\times10^6$.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1193-1196
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• 2009

Low resistivity interconnection and high-mobility channel are required to realize ultrahigh-definition LCDs such as 4k ${\times}$ 2k TVs. We evaluated fully Cu-based gate and Source/Drain interconnections, consisting of stacked pure-Cu/Cu-Mn layers for TFT-LCDs, and found the underlying Cu-Mn alloy film has superior adhesion to glass substrates and CVD-SiOx films. It was also confirmed that wet etching of the Cu/Cu-Mn films without residues and low contact resistance with both channel IGZO and pixel ITO films can be obtained. It is thus considered that the stacked Cu/Cu-Mn structure is one of candidates to replacing conventionally pure-Cu/refractory metal.

• Transactions on Electrical and Electronic Materials
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• v.18 no.3
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• pp.141-143
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• 2017

Novel structured thin film transistors (TFTs) of amorphous silicon zinc tin oxide (a-SZTO) were designed and fabricated with a thin metal layer between the source and drain electrodes. A SZTO channel was annealed at $500^{\circ}C$. A Ti/Au electrode was used on the SZTO channel. Metals are deposited between the source and drain in this novel structured TFTs. The mobility of the was improved from $14.77cm^2/Vs$ to $35.59cm^2/Vs$ simply by adopting the novel structure without changing any other processing parameters, such as annealing condition, sputtering power or processing pressure. In addition, stability was improved under the positive bias thermal stress and negative bias thermal stress applied to the novel structured TFTs. Finally, this novel structured TFT was observed to be less affected by back-channel effect.

• New Physics: Sae Mulli
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• v.68 no.11
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• pp.1192-1195
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• 2018

We studied the electrical properties of organic thin-film transistors (OTFTs) fabricated at different deposition rates by measuring the field-effect mobility and the threshold voltages. As the active layer, pentacene thin film with a thickness of 50 nm was deposited at a rate of $0.05{\AA}/s$ to $1.14{\AA}/s$. The thickness of the drain-source gold electrode was 50 nm. The mobility was $1.9{\times}10^{-1}cm^2/V{\cdot}s$ at a deposition rate of $0.05{\AA}/s$, the mobility increased to $5.2{\times}10^{-1}cm^2/V{\cdot}s$ when the deposition rate was increased to $0.4{\AA}/s$, and then the mobility decreased to $6.5{\times}10^{-1}cm^2/V{\cdot}s$ when the deposition rate decreased to $1.14{\AA}/s$. Thus, the mobility of pentacene OTFTs was observed to depend on the thermal deposition rate.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.12
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• pp.1001-1007
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• 2002

In this paper we analyzed the effects of pentacene thickness and the location of source/drain contacts on the performance of pentacene TFT Above a certain thickness of pentacene thin film the pentacene grain was turned from the thin film phase into the bulk phase, resulting in degrading the crystallinity and then performance as well. For the top contact structure in which source/drain contacts are located above pentacene film, the contact resistance decreased comparing with the bottom contact structure. However, the leakage current in the off-state became large and then the related parameters such as on/off current ratio were deteriorated. We found that the thickness of around 300$\AA$-700$\AA$ was suitable, and that the bottom contact was more feasible for hig Performance pentacene OTFT.