• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.192-195
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• 2000

Antimony doped tin oxyde thin films have been deposited by sol-gel method using non-alkoxide precursor SnCl$_2$$.$2H$_2$O as host and SbC1$_3$ as dopant material. Using spin coating method, thin films of thickness up to 200nm have been uniformly deposited on Corning 1737F non-alkali glass substrates. Effect of Sb doping concentration and heat treatment on electrical and optical properties was investigated. Heat treatment was performed at the temperature from 350$^{\circ}C$ to 650$^{\circ}C$ in flowing O$_2$. The resulting ATO films showed widely changing electrical resistivity and optical transmittance values in the visible spectrum depending on the composition and firing condition.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.818-821
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• 2003

Sn-doped $In_{2}O_{3}$ (ITO) thin film is one of the materials widely on research not only in the academic fields but also in industrial fields because of their transparency, high conductivity and good adhesion characteristics on substrate. ITO thin films are usually preferred oriented to one of the (222), (400), and (440) planes during crystallization process, which is dependent on processing variables. The preferred orientation affects electrical, optical and etching properties of the films. In this study, thin films of preferred oriented in different orientation were fabricated by controlling processing variables. The crystallization behavior, grain size, surface roughness, transparency and electrical properties of the thin films in different orientation were examined.

• Journal of Sensor Science and Technology
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• v.4 no.2
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• pp.51-57
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• 1995

Indium Tin Oxide (ITO) thin films have been fabricated by the rf magnetron sputtering technique with a target of a mixture $In_{2}O_{3}$ (90mol%) and $SnO_{2}$ (10mol%). We prepared ITO thin films with substrate temperature 100, 200, 300, 400, $500^{\circ}C$ and post-annealing temperature 300, 400, $500^{\circ}C$. And we analyzed X -ray diffraction patterns, electrical properties, transmission spectra and SEM photographs. As a result, the crystallinity, electrical conductivity and transmittance of ITO thin films were improved with increasing substrate temperature. But, as increasing post-annealing temperature in air, conductivity of the film was decreased. When the ITO thin film was fabricated with substrate temperature of $500^{\circ}C$ and thickness of $3000{\AA}$, its resistivity and transmittance were about $2{\times}10^{-4}{\Omega}cm$ and 85% or more, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.998-1001
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• 2004

ZnO, $SnO_2$ 타겟 각각의 RF 파워를 50 W, 38 W로 고정시킨 후 combinatorial RF magnetron sputtering법을 사용하여 기판 위치에 따라서 조성 구배를 주어 여러 가지 조성의 Zn-Sn-O(ZTO) 박막을 제작하였다. 시편의 열처리에 따른 물성 변화를 분석하기 위해 Rapid Thermal Annealer(RTA)을 이용하여 450, $650{^\circ}C$의 온도 및 $10^{-2}$ Ton의 진공 분위기에서 각각 1 시간 동안 열처리하였다. XRD 분석 결과 상온에서 제작된 ZTO 박막은 Sn 18 at%의 조성을 갖는 시편을 제외하고 모두 비정질상으로 나타났다. $450^{\circ}C$에서 열처리 후 구조적인 변화는 보이지 않았으나, 캐리어 농도와 이동도는 증가하였으며 Sn 54 at%의 조성에서 최고 $25.4cm^2/Vsec$의 전자 이동도를 나타내었다. $26{\leq}Sn$ $at%{\leq}65$의 조성 범위를 갖는 박막은 가시광 영역에서 80 % 이상의 투과도를 가졌으며 $650^{\circ}C$에서 결정화가 되면서 투과도가 증가하였다.

• Journal of Korean Ophthalmic Optics Society
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• v.15 no.4
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• pp.299-305
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• 2010

Purposes: The purposes of this study were to investigate the optical, structural and electrical properties of the antimony doped tin oxide(ATO) thin films according to certain variable deposition conditions, such as RF input power and T-S (target-substrate) distance change, using transparent conducting oxide (TCO). Methods: ATO thin films of Sb concentration ratio with $SnO_2:Sb_2O_5$ = 95:5 wt% were deposited at room temperature by RF magnetron sputtering method. Results: ATO thin films were most sensitive to the RF input power: light transmittance was 78% at RF input power of 30W, and 0.56 nm for the surface roughness and 1007 $\Omega{\cdot}cm^{-2}$ for the sheet resistance as well. Conclusions: It was found that ATO thin films were showed the large change in its characteristics of structural, optical and electrical properties which were affected by T-S distance and RF input power.

• Korean Journal of Materials Research
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• v.27 no.4
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• pp.216-220
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• 2017

The effect of electron beam (EB) irradiation on the electrical properties of Zn-Sn-O (ZTO) thin films fabricated using a sol-gel process was investigated. As the EB dose increased, the saturation mobility of ZTO thin film transistors (TFTs) was found to slightly decrease, and the subthreshold swing and on/off ratio degenerated. X-ray photoelectron spectroscopy analysis of the O 1s core level showed that the relative area of oxygen vacancies ($V_O$) increased from 10.35 to 12.56 % as the EB dose increased from 0 to $7.5{\times}10^{16}electrons/cm^2$. Also, spectroscopic ellipsometry analysis showed that the optical band gap varied from 3.53 to 3.96 eV with increasing EB dose. From the results of the electrical property and XPS analyses of the ZTO TFTs, it was found that the electrical characteristic of the ZTO thin films changed from semiconductor to conductor with increasing EB dose. It is thought that the electrical property change is due to the formation of defect sites like oxygen vacancies.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.4
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• pp.935-938
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• 2010

Indium-tin-oxide (ITO) films show a low electrical resistance and high transmittance in the visible range of an optical spectrum. The transparent electrodes have to get resistivity and sheet resistance less than $1{\times}10^{-3}{\Omega}/cm$ and $10^3{\Omega}/sq$ respectively and transmittance over 80% at wavelength of 380nm~780nm. This study establishes DC magnetron sputtering process condition on ITO thin film by measuring electrical and optical properties of the thin film. As results, we obtained $300\;{\mu}{\Omega}cm$ resistivity of ITO films with good transmittance (above 90 %) under 90:10 wt% composition rate of $In_2O_3:SnO_2$. Also, we understood that the ITO thin film by DC magnetron sputtering depends on the deposition condition, especially substrate temperature, and the composition rate of $In_2O_3:SnO_2$ that is one of the most critical parameters was successfully optimized for high qualified transparent electrodes.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.349-349
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• 2009

High quality ZnO:Al films were prepared on glass substrates by in-line RF magnetron sputtering and their surface morphologies were modified by wet-etching process in dilute acid solution to improve optical properties for application to silicon thin film solar cells as front electrode. The as-deposited films show a strong preferred orientation in [001] direction under our experimental conditions. A low resistivity below $5{\times}10^{-4}{\Omega}{\cdot}cm$ and high optical transmittance above 80% in a visible range are achieved in the films deposited at optimized conditions. After wet-etching, the surface morphologies of the films are changed dramatically depending on the deposition conditions, especially working pressure. The optical properties such as total/diffuse transmittance, haze and angular resolved distribution of light are varied significantly with the surface morphology feature, whereas the electrical properties are seldom changed. The cell performances of silicon thin film solar cells fabricated on the textured films are also evaluated in detail with comparison of commercial $SnO_2$:F films.

• Transactions on Electrical and Electronic Materials
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• v.13 no.1
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• pp.27-30
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• 2012

This paper proposes a micro gas sensor for measuring $H_2S$ gas. This is based on a $SnO_2$-CuO multi-layer thin film. The sensor has a silicon diaphragm, micro heater, and sensing layers. The micro heater is embedded in the sensing layer in order to increase the temperature to an operating temperature. The $SnO_2$-CuO multi layer film is prepared by the alternating deposition method and thermal oxidation which uses an electron beam evaporator and a thermal furnace. To determine the effect of the number of layers, five sets of films are prepared, each with different number of layers. The sensitivities are measured by applying $H_2S$ gas. It has a concentration of 1 ppm at an operating temperature of $270^{\circ}C$. At the same total thickness, the sensitivity of the sensor with multi sensing layers was improved, compared to the sensor with one sensing layer. The sensitivity of the sensor with five layers to 1 ppm of $H_2S$ gas is approximately 68%. This is approximately 12% more than that of a sensor with one-layer.

• Bulletin of the Korean Chemical Society
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• v.31 no.11
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• pp.3093-3098
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• 2010

The core-shell $SnO_2$@AO (A=Ni, Cu, Zn and Mg) films were prepared and the effects of coatings on photovoltaic properties were investigated. Studies on X-ray photoelectron spectroscopy, energy dispersive X-ray analysis and transmission electron microscopy showed the formation of divalent oxides on the surface of $SnO_2$ nanoparticles. It was commonly observed that all the dye-sensitized core-shell films exhibited higher photovoltage than the bare $SnO_2$ film. Transient photovoltage measurements confirmed that the improved photovoltages were related to the decreased time constants for electron recombination.