Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

H2S Micro Gas Sensor Based on a SnO2-CuO Multi-layer Thin Film

  • Received : 2011.10.10
  • Accepted : 2011.12.13
  • Published : 2012.02.25
Download PDF
⟨ Previous Next ⟩

Abstract

This paper proposes a micro gas sensor for measuring $H_2S$ gas. This is based on a $SnO_2$-CuO multi-layer thin film. The sensor has a silicon diaphragm, micro heater, and sensing layers. The micro heater is embedded in the sensing layer in order to increase the temperature to an operating temperature. The $SnO_2$-CuO multi layer film is prepared by the alternating deposition method and thermal oxidation which uses an electron beam evaporator and a thermal furnace. To determine the effect of the number of layers, five sets of films are prepared, each with different number of layers. The sensitivities are measured by applying $H_2S$ gas. It has a concentration of 1 ppm at an operating temperature of $270^{\circ}C$. At the same total thickness, the sensitivity of the sensor with multi sensing layers was improved, compared to the sensor with one sensing layer. The sensitivity of the sensor with five layers to 1 ppm of $H_2S$ gas is approximately 68%. This is approximately 12% more than that of a sensor with one-layer.

Keywords

References

  1. T. Kwon, S. Park, J. Ryu, and H. Choi, Sensor. Actuat. B 46, 75 (1998) [DOI: 10.1016/S0925-4005(97)00324-9].
  2. T. Gessner, K. Gottfried, R. Hoffmann, C. Kaufmann, and U. Weiss, Microsyst. Technol. 6, 169 (2000) [DOI: 10.1007/ s005420000048]
  3. G. Faglia, E. Comini, M. Pardo, A. Taroni, G. Cardinali, S. Nicoletti, and G. Sberveglieri, Microsyst. Technol. 6, 54 (1999) [DOI: 10.1007/s005420050175].
  4. N. Yamazoe, Y. Kurokawa, and T. Seiyama, Sensor. Actuat. B 4, 283 (1983) [DOI: 10.1016/0250-6874(83)85034-3].
  5. S. M. Sze, Semiconductor Sensors (Wiley, New York, 1995) p. 383.
  6. J. Watson, Sensor. Actuat. B 5, 29 (1984) [DOI: 10.1016/0250- 6874(84)87004-3].
  7. M. S. Wagh, L. A. Patil, T. Seth, and D. P. Amalnerkar, Mater. Chem. Phys. 84, 228 (2004) [DOI: 10.1016/S0254- 0584(03)00232-3].
  8. S. R. Morrison, Sensor. Actuat. B 12, 425 (1987) [DOI: 10.1016/0250-6874(87)80061-6].
  9. S. Plazer, E. Moretton, F. H. Ramirez, A. Romano-Rodriguez, and J. Wollenstein, Microsyst. Technol. 14, 645 (2008) [DOI: 10.1007/s00542-007-0473-3].
  10. V. R. Katti, A. K. Debnath, K. P. Muthe, M. Kaur, A. K. Dua, S. C. Gadkari, S. K. Gupta, and V. C. Sahni, Sensor. Actuat. B 96, 245 (2003) [DOI: 10.1016/S0925-4005(03)00532-X].
  11. J. Tamaki, K. Shimanoe, Y. Yamada, Y. Yamamoto, N. Miura, and N. Yamazoe, Sensor. Actuat. B 49, 121 (1998) [DOI: 10.1016/ S0925-4005(98)00144-0].
  12. W. Yuanda, T. Maosong, H. Xiuli, Z. Yushu, and D. Guorui, Sensor. Actuat. B 79, 187 (2001) [DOI: 10.1016/S0925- 4005(01)00873-5].
  13. R. S. Niranjan, K. P. Patil, S. R. Sainkar, and I. S. Mulla, Mater. Chem. Phys. 80, 250 (2003) [DOI: 10.1016/S0254- 0584(02)00467-4].
  14. R. B. Vasiliev, M. N. Rumyantseva, N. Y. Yakovlev, and A. M. Gasckov, Sensor. Actuat. B 50, 186 (1998) [DOI: 10.1016/S0925- 4005(98)00235-4].
  15. T. Maekawa, J. Tamaki, N. Miura, and N. Yamazoe, J. Mater. Chem. 4, 1259 (1994) [DOI: 10.1039/JM9940401259].
  16. J. Tamaki, T. Maekawa, N. Miura, and N. Yamazoe, Sensor. Actuat. B 9, 197 (1992) [DOI: 10.1016/0925-4005(92)80216-K].
  17. T. Mochida, K. Kikuchi, T. Kondo, H. Ueno, and Y. Matsuura, Sensor. Actuat. B 24, 433 (1995) [DOI: 10.1016/0925- 4005(95)85098-8].
  18. D. H. Dawson, G. S. Henshaw, and D. E. Williams, Sensor. Actuat. B 26, 76 (1995) [DOI: 10.1016/0925-4005(94)01560-5].
  19. Y. Zhu, J. Shi, Z. Zhang, C. Zhang, and X. Zhang, Anal. Chem. 74, 120 (2002) [DOI: 10.1021/ac010450p].
  20. A. Khanna, R. Kumar, and S. S. Bhatti, Appl. Phys. Lett. 82, 4388 (2003) [DOI: 10.1063/1.1584071].

Cited by

  1. Optical transitions and point defects in F:SnO2 films: Effect of annealing vol.295, 2014, https://doi.org/10.1016/j.apsusc.2013.12.057