The Electrical and Optical Characteristics of ATO Films Prepared by RF Magnetron Sputtering Method

RF 마그네트론 스퍼트링법에 의해 제조된 ATO 박막의 전기적 및 광학적 특성

  • Kang, Sung Soo (Dept. of Ophthalmic Optics, Daegu Polytechnic College University) ;
  • Lee, Sung Ho (Nano Convergence Practical Application Center, Daegu Technopark) ;
  • Jang, Yoon Seok (Department of Ophthalmic Optics, Taegu Science College) ;
  • Park, Sang Chul (Dept. of Ophthalmic Optics, Busan College of Information Technology)
  • 강성수 (대구산업정보대학 안경광학과) ;
  • 이성호 (대구테크노파크 나노부품실용화센터) ;
  • 장윤석 (대구과학대학 안경광학과) ;
  • 박상철 (부산정보대학 안경광학과)
  • Received : 2010.04.30
  • Accepted : 2010.12.18
  • Published : 2010.12.31

Abstract

Purposes: The purposes of this study were to investigate the optical, structural and electrical properties of the antimony doped tin oxide(ATO) thin films according to certain variable deposition conditions, such as RF input power and T-S (target-substrate) distance change, using transparent conducting oxide (TCO). Methods: ATO thin films of Sb concentration ratio with $SnO_2:Sb_2O_5$ = 95:5 wt% were deposited at room temperature by RF magnetron sputtering method. Results: ATO thin films were most sensitive to the RF input power: light transmittance was 78% at RF input power of 30W, and 0.56 nm for the surface roughness and 1007 $\Omega{\cdot}cm^{-2}$ for the sheet resistance as well. Conclusions: It was found that ATO thin films were showed the large change in its characteristics of structural, optical and electrical properties which were affected by T-S distance and RF input power.

목적: 본 연구에서는 투명 전도막으로 사용할 안티몬주석산화물 박막의 특성변수인 RF 전력, T-S간 거리 등의 변화에 따른 박막의 광학적, 전기적, 구조적 특성을 알아보았다. 방법: 안티몬주석산화물 박막을 마그네트론 스퍼트링 방법으로 실온에서 $SnO_2:Sb_2O_5$= 95:5 wt%의 비율로 제작하였다. 결과: 안티몬주석산화물 박막은 RF 입력전력에 가장 민감한 특성변화를 보였는데, 30W의 RF 입력전력에서 광투과율이 78%, 표면거칠기가 0.56 nm, 면저항이 1007 $\Omega{\cdot}cm^{-2}$이었다. 결론: 안티몬주석산화물 박막은 T-S간 거리와 RF 전력에 따라 구조적, 광학적 및 전기적 특성이 크게 달라지는 것을 확인하였다.

Keywords

References

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