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http://dx.doi.org/10.5012/bkcs.2010.31.11.3093

Suppression of Charge Recombination Rate in Nanocrystalline SnO2 by Thin Coatings of Divalent Oxides in Dye-Sensitized Solar Cells  

Lee, Chae-Hyeon (Solar Cell Center, Korea Institute of Science and Technology)
Lee, Gi-Won (Solar Cell Center, Korea Institute of Science and Technology)
Kang, Wee-Kyung (Department of Chemistry, Soongsil University)
Lee, Doh-Kwon (Solar Cell Center, Korea Institute of Science and Technology)
Ko, Min-Jae (Solar Cell Center, Korea Institute of Science and Technology)
Kim, Kyoung-Kon (Solar Cell Center, Korea Institute of Science and Technology)
Park, Nam-Gyu (School of Chemical Engineering, Sungkyunkwan University)
Publication Information
Abstract
The core-shell $SnO_2$@AO (A=Ni, Cu, Zn and Mg) films were prepared and the effects of coatings on photovoltaic properties were investigated. Studies on X-ray photoelectron spectroscopy, energy dispersive X-ray analysis and transmission electron microscopy showed the formation of divalent oxides on the surface of $SnO_2$ nanoparticles. It was commonly observed that all the dye-sensitized core-shell films exhibited higher photovoltage than the bare $SnO_2$ film. Transient photovoltage measurements confirmed that the improved photovoltages were related to the decreased time constants for electron recombination.
Keywords
Core-shell; Surface coating; Dye-sensitized solar cell; Charge recombination; Nanocrystalline $SnO_2$;
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