• 한국전기전자재료학회논문지
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• 제26권8호
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• pp.602-607
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• 2013

Concern for the TOS (Transparent Oxide Semiconductor) is increasing with the recent increase in interest for flexible device. Especially MgZnO has attracted a lot of attention. $Mg_xZn_{1-x}O$, which ZnO-based wideband-gap alloys is tuneable the band-gap ranges from 3.36 eV to 7.8 eV. In particular, the flexible substrate, the crystal structure of the amorphous as well as the surface morphology is not good. So research of MgZnO thin films growth on flexible substrate is essential. Therefore, in this study, we studied on the effects of the oxygen partial pressure on the structural and crystalline of $Mg_{0.1}Zn_{0.9}O$ thin films. MgZnO thin films were deposited on PES substrate by using pulsed laser deposition. We used XRD and AFM in order to observe the structural characteristics of MgZnO thin films. UV-visible spectrophotometer was used to get the band gap and transmittance. Crystallization was done at a low oxygen partial pressure. The crystallinity of MgZnO thin films with increasing temperature was improved, Grain size and RMS of the films were increased. MgZnO thin films showed high transmittance over 80% in the visible region.

• Genomics & Informatics
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• 제6권3호
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• pp.142-146
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• 2008

In order to understand the protein functions that are related to disease, it is important to detect the correlation between amino acid mutations and disease. Many mutation studies about disease-related proteins have been carried out through molecular biology techniques, such as vector design, protein engineering, and protein crystallization. However, experimental protein mutation studies are time-consuming, be it in vivo or in vitro. We therefore performed a bioinformatic analysis of known disease-related mutations and their protein structure changes in order to analyze the correlation between mutation and disease. For this study, we selected 111 diseases that were related to 175 proteins from the PDB database and 710 mutations that were found in the protein structures. The mutations were acquired from the Human Gene Mutation Database (HGMD). We selected point mutations, excluding only insertions or deletions, for detecting structural changes. To detect a structural change by mutation, we analyzed not only the structural properties (distance of pocket and mutation, pocket size, surface size, and stability), but also the physico-chemical properties (weight, instability, isoelectric point (IEP), and GRAVY score) for the 710 mutations. We detected that the distance between the pocket and disease-related mutation lay within $20\;{\AA}$ (98.5%, 700 proteins). We found that there was no significant correlation between structural stability and disease-causing mutations or between hydrophobicity changes and critical mutations. For large-scale mutational analysis of disease-causing mutations, our bioinformatics approach, using 710 structural mutations, called "Structural Mutatomics," can help researchers to detect disease-specific mutations and to understand the biological functions of disease-related proteins.

• Journal of the Optical Society of Korea
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• 제13권1호
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• pp.65-74
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• 2009

Device quality indium tin oxide (ITO) films are deposited on glass substrates and ultra-thin diamond-like carbon films are deposited as a buffer layer on ITO by a pulsed Nd:YAG laser at 355 nm and 532 nm wavelength. ITO films deposited at room temperature are largely amorphous although their optical transmittances in the visible range are > 90%. The resistivity of their amorphous ITO films is too high to enable an efficient organic light-emitting device (OLED), in contrast to that deposited by a KrF laser. Substrate heating at $200^{\circ}C$ with laser wavelength of 355 nm, the ITO film resistivity decreases by almost an order of magnitude to $2{\times}10^{-4}\;{\Omega}\;cm$ while its optical transmittance is maintained at > 90%. The thermally induced crystallization of ITO has a preferred <111> directional orientation texture which largely accounts for the lowering of film resistivity. The background gas and deposition distance, that between the ITO target and the glass substrate, influence the thin-film microstructures. The optical and electrical properties are compared to published results using other nanosecond lasers and other fluence, as well as the use of ultra fast lasers. Molecularly doped, single-layer OLEDs of ITO/(PVK+TPD+$Alq_3$)/Al which are fabricated using pulsed-laser deposited ITO samples are compared to those fabricated using the commercial ITO. Effects such as surface texture and roughness of ITO and the insertion of DLC as a buffer layer into ITO/DLC/(PVK+TPD+$Alq_3$)/Al devices are investigated. The effects of DLC-on-ITO on OLED improvement such as better turn-on voltage and brightness are explained by a possible reduction of energy barrier to the hole injection from ITO into the light-emitting layer.

• Bulletin of the Korean Chemical Society
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• 제34권8호
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• pp.2408-2412
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• 2013

We demonstrate herein the synthesis and modification of magnetic nanoparticles and its use in the immobilization of the lipase. Magnetic $Fe_3O_4$ nanoparticles (MNPs) were prepared by simple co-precipitation method in aqueous medium and then subsequently modified with tetraethyl orthosilicate (TEOS) and 3-aminopropyl triethylenesilane (APTES). Silanization magnetic nanoparticles (SMNP) and amino magnetic nanomicrosphere (AMNP) were synthesized successfully. The morphology, structure, magnetic property and chemical composition of the synthetic MNP and its derivatives were characterized using transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FT-IR) analysis, X-ray diffraction, superconducting quantum interference device (SQUID) and thermogravimetric analyses (TGA). All of these three nanoparticles exhibited good crystallization performance, apparent superparamagnetism, and the saturation magnetization of MNP, SMNP, AMNP were 47.9 emu/g, 33.0 emu/g and 19.5 emu/g, respectively. The amino content was 5.66%. The AMNP was used to immobilize lipase, and the maximum adsorption capacity of the protein was 26.3 mg/g. The maximum maintained activity (88 percent) was achieved while the amount of immobilized lipase was 23.7 mg $g^{-1}$. Immobilization of enzyme on the magnetic nanoparticles can facilitate the isolation of reaction products from reaction mixture and thus lowers the cost of enzyme application.

• 한국막학회:학술대회논문집
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• 한국막학회 2004년도 Proceedings of the second conference of aseanian membrane society
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• pp.86-89
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• 2004

The present study reports the preparation of a compact ZSM-5 membrane showing high thermal stability and high separation factors, especially n-/i-butane isomers at high temperatures. ZSM-5 membrane was prepared on a porous $\alpha$-Al$_2$O$_3$ tube (an average pore diameter, ca. 100 nm) at 18$0^{\circ}C$ by the seed-assisted crystallization method. The XRD and SEM results showed that a thin zeolite layer (ca. 1 ${\mu}{\textrm}{m}$) was formed on the support surface. The single gas permeances of $N_2$, H$_2$, SF$_{6}$, n-butane, and i-butane were taken at 27$0^{\circ}C$. i-Butane permeance hardly changed after repeated thermal treatments up to 40$0^{\circ}C$, indicating the membrane is thermally stable. On the other hand, other single gas permeances increased when the membrane was further dried at 40$0^{\circ}C$, indicating thermal pretreatment at 27$0^{\circ}C$ could not remove all the adsorbed species in the membrane. i-Butane and SF$_{6}$ permeances were significantly lower than the permeances of smaller molecules, indicating that the membrane has a low concentration of defects. The ideal selectivities at 27$0^{\circ}C$ were 61 for $H_2$/i-butane and 47 for $H_2$/SF$_{6}$. The temperature dependency of n/i-butane ideal selectivities and separation factors for an equimolar n/i-butane mixture was studied. The ideal selectivity showed a maximum of 36 at 30$0^{\circ}C$. The separation factors increased with temperature and reached around 12 at 300-40$0^{\circ}C$, which were much higher than those reported in the literature.ature.

• 마이크로전자및패키징학회지
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• 제6권2호
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• pp.69-74
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• 1999

흑연 및 카본계 재료는 층상구조 내부로 리튬이온을 가역적으로 intercalation /deintercalation시킬 수 있는 특성을 지니고 있다. 리튬이온이 intercalation된 카본의 전기화학적 퍼텐셜은 리튬금속에 가까운 값이므로, 리튬이온전지의 부극용 재료로 많은 연구가 진행되고 있다. 본 연구에서는 petroleum pitch를 열분해시킨 후, 700~$1300^{\circ}C$의 서로 다른 온도에서 각각 3시간 동안 열처리한 카본을 사용하였다. XRD 측정 결과, 카본의 결정성은 열처리 온도와 함께 증가하였다. 충방전 특성 시험 및 전해질과 카본전극 표면 사이의 계면 반응특성은 각각 0.1C의 속도로 정전류법에 의한 충방전 시험과 순환전압전류법(CV)에 의해 평가하였으며, 열처리 온도와 충방전 횟수에 따른 용량과의 관계에 대하여 논의하였다. 가역용량(reversible capacity)은 열처리 온도가 증가함에 따라 $1000^{\circ}C$까지는 증가하지만, 그 이상의 온도에서는 약간 감소하는 경향을 보였다. 또한, 충방전 횟수가 증가할수록 충전용량은 감소하지만, 가역특성(reversibility)은 향상되었다.

• 한국진공학회지
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• 제14권4호
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• pp.201-206
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• 2005

본 연구에서는 HVPE (Hydride Vapor Phase Epitaxy) 방법으로 Si 위에 GaN/AIN/Al/Si 구조를 제작하고, AlN 버퍼층의 두께에 따른 광학적 특성을 조사함으로써 효과적인 eaN 성장을 위한HVPE에서의 공정 방법을 개선하고자 하였다. 이를 위해 Al을 증착한 Si 기판과 그렇지 않은 경우를 PL측정을 통해 그 효과를 관찰하였고, $5{\AA}$ 두께의 Al 대해 AlN 버퍼층의 두께를 변화시켜가면서 GaN를 성장시켜 그 특성을 조사하였다. Al을 증착한 경우가 증착하지 않은 경우에 비해 광학적 특성이 우수한 것으로 나타났으며, AlN의 두께 변화에 대해서는 양질의 GaN를 얻기 위한 최적의 두께는 약 $260{\AA}$ 인 것으로 나타났다. 이 경우 SEM을 이용한 표면사진에서 GaN의 초기성장이 hexagonal형태로 성장되고 있음을 관찰할 수 있었다. 또한 XRD의 회절 패턴은 GaN가 {0001} 방향으로 우선 배향성을 가지고 성장되고 있음을 보여주고 있었다.

• 대한금속재료학회지
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• 제48권6호
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• pp.565-569
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• 2010

We report on the characteristics of indium-oxide-doped ZnO (IZO) ohmic contact to p-GaN. The IZO ohmic contact layer was deposited on p-GaN by a Roll-to-Roll (RTR) sputter method. IZO contact film with a thickness of 360, 230 and 100 nm yielded an ohmic contact resistance of $4.70{\times}10^{-4}$, $5.95{\times}10^{-2}$, $4.85{\times}10^{-1}\;{\Omega}cm^{2}$ on p-GaN when annealed at $600{^{\circ}C}$ for 1 min under a nitrogen ambient, respectively. While the transmittance of IZO film with a thickness of 360 nm slightly increased in the wavelength range of 380-800 nm after annealing, the transmittance rapidly increased up to 80% after annealing at $600{^{\circ}C}$ in the wavelength range of 380~430 nm because the crystallization of IZO film and created Ga vacancies near the p-GaN surface region were affected by the annealing. These results indicate that ohmic contact resistance and transmittance of the IZO films improved.

• Journal of Electrochemical Science and Technology
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• 제10권3호
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• pp.335-343
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• 2019

In this study, $Sr_2Ni_{1.8}Mo_{0.2}O_{6-{\delta}}$ (SNM) with a double perovskite structure was investigated as an alternative anode for use in the $CH_4$ fuel in solid oxide fuel cells. SNM demonstrates a double perovskite phase over $600^{\circ}C$ and marginal crystallization at higher temperatures. The Ni nanoparticles were exsolved from the SNM anode during the fabrication process. As the SNM anode demonstrates poor electrochemical and electro-catalytic properties in the $H_2$ and $CH_4$ fuels, it was modified by applying a samarium-doped ceria (SDC) coating on its surface to improve the cell performance. As a result of this SDC modification, the cell performance improved from $39.4mW/cm^2$ to $117.7mW/cm^2$ in $H_2$ and from $15.9mW/cm^2$ to $66.6mW/cm^2$ in $CH_4$ at $850^{\circ}C$. The mixed ionic and electronic conductive property of the SDC provided electrochemical oxidation sites that are beyond the triple boundary phase sites in the SNM anode. In addition, the carbon deposition on the SDC thin layer was minimized due to the SDC's excellent oxygen ion conductivity.

• 대한금속재료학회지
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• 제49권4호
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• pp.321-328
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• 2011

The 30 nm-thick Ni layers was deposited on a flexible polyimide substrate with an e-beam evaporation. Subsequently, we deposited a Si layer using a catalytic CVD (Cat-CVD) in a hydride amorphous silicon (${\alpha}$-Si:H) process of $T_{s}=180^{\circ}C$ with varying thicknesses of 55, 75, 145, and 220 nm. The sheet resistance, phase, degree of the crystallization, microstructure, composition, and surface roughness were measured by a four-point probe, HRXRD, micro-Raman spectroscopy, FE-SEM, TEM, AES, and SPM. We confirmed that our newly proposed Cat-CVD process simultaneously formed both NiSi and crystallized Si without additional annealing. The NiSi showed low sheet resistance of < $13{\Omega}$□, while carbon (C) diffused from the substrate led the resistance fluctuation with silicon deposition thickness. HRXRD and micro-Raman analysis also supported the existence of NiSi and crystallized (>66%) Si layers. TEM analysis showed uniform NiSi and silicon layers, and the thickness of the NiSi increased as Si deposition time increased. Based on the AES depth profiling, we confirmed that the carbon from the polyimide substrate diffused into the NiSi and Si layers during the Cat-CVD, which caused a pile-up of C at the interface. This carbon diffusion might lessen NiSi formation and increase the resistance of the NiSi.