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http://dx.doi.org/10.4313/JKEM.2013.26.8.602

The Characteristics of Mg0.1Zn0.9O Thin Films on PES Substrate According to Fabricated Conditions by PLD  

Kim, Sang-Hyun (Division of Electrical and Electronics Engineering, Korea Maritime University)
Lee, Hyun-Min (Division of Electrical and Electronics Engineering, Korea Maritime University)
Jang, NakWon (Division of Electrical and Electronics Engineering, Korea Maritime University)
Park, Mi-Seon (Department of Nano Technology, Dong Eui University)
Lee, Won-Jae (Department of Nano Technology, Dong Eui University)
Kim, Hong-Seung (Department of Nano Semiconductor Engineering, Korea Maritime University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.26, no.8, 2013 , pp. 602-607 More about this Journal
Abstract
Concern for the TOS (Transparent Oxide Semiconductor) is increasing with the recent increase in interest for flexible device. Especially MgZnO has attracted a lot of attention. $Mg_xZn_{1-x}O$, which ZnO-based wideband-gap alloys is tuneable the band-gap ranges from 3.36 eV to 7.8 eV. In particular, the flexible substrate, the crystal structure of the amorphous as well as the surface morphology is not good. So research of MgZnO thin films growth on flexible substrate is essential. Therefore, in this study, we studied on the effects of the oxygen partial pressure on the structural and crystalline of $Mg_{0.1}Zn_{0.9}O$ thin films. MgZnO thin films were deposited on PES substrate by using pulsed laser deposition. We used XRD and AFM in order to observe the structural characteristics of MgZnO thin films. UV-visible spectrophotometer was used to get the band gap and transmittance. Crystallization was done at a low oxygen partial pressure. The crystallinity of MgZnO thin films with increasing temperature was improved, Grain size and RMS of the films were increased. MgZnO thin films showed high transmittance over 80% in the visible region.
Keywords
MgZnO; buffer layer; XRD; AFM; UV;
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