Korean Journal of Metals and Materials (대한금속재료학회지)

The Korean Institute of Metals and Materials (대한금속재료학회)
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Effects of Film Thickness and Annealing Temperature on the Specific Contact Resistivity and the Transmittance of the IZO Layers Grown on p-GaN by Roll-to-Roll Sputtering

p-GaN 위에 Roll-to-Roll sputter로 성장된 IZO의 접촉 비저항 및 투과도에 대한 박막 두께와 열처리 온도의 영향

  • Kim, Jun Young (Department of Materials Science and Metallurgical Engineering, Sunchon National University) ;
  • Kim, Jae-Kwan (Department of Materials Science and Metallurgical Engineering, Sunchon National University) ;
  • Han, Seung-Cheol (Department of Materials Science and Metallurgical Engineering, Sunchon National University) ;
  • Kim, Han Ki (Department of Display Materials Engineering, Kyung Hee University) ;
  • Lee, Ji-Myon (Department of Materials Science and Metallurgical Engineering, Sunchon National University)
  • 김준영 (순천대학교 재료금속공학과) ;
  • 김재관 (순천대학교 재료금속공학과) ;
  • 한승철 (순천대학교 재료금속공학과) ;
  • 김한기 (경희대학교 디스플레이재료공학과) ;
  • 이지면 (순천대학교 재료금속공학과)
  • Received : 2009.12.31
  • Published : 2010.06.22
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Abstract

We report on the characteristics of indium-oxide-doped ZnO (IZO) ohmic contact to p-GaN. The IZO ohmic contact layer was deposited on p-GaN by a Roll-to-Roll (RTR) sputter method. IZO contact film with a thickness of 360, 230 and 100 nm yielded an ohmic contact resistance of $4.70{\times}10^{-4}$, $5.95{\times}10^{-2}$, $4.85{\times}10^{-1}\;{\Omega}cm^{2}$ on p-GaN when annealed at $600{^{\circ}C}$ for 1 min under a nitrogen ambient, respectively. While the transmittance of IZO film with a thickness of 360 nm slightly increased in the wavelength range of 380-800 nm after annealing, the transmittance rapidly increased up to 80% after annealing at $600{^{\circ}C}$ in the wavelength range of 380~430 nm because the crystallization of IZO film and created Ga vacancies near the p-GaN surface region were affected by the annealing. These results indicate that ohmic contact resistance and transmittance of the IZO films improved.

Keywords

Acknowledgement

Supported by : 지식경제부

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