• Journal of the Microelectronics and Packaging Society
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• v.6 no.4
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• pp.9-14
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• 1999

In this paper, we proposed a simultaneous switching noise (SSN) reduction technique in multi-layer boards (MLB) for high-speed digital applications and analyzed it using the Finite Difference Time Domain (FDTD) method. The new structure using conductive dielectric substrates is effective for the reduction of SSN couplings and resonances. The uniform insertion of the conducive layer reduced the SSN coupling and resonance by 85% and the partial insertion only around the edges reduced by 55% respectively.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 1999.11a
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• pp.33-36
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• 1999

In this paper, we proposed a simultaneous switching noise(SSN) reduction technique in muti-layer beards(MLB) for high-speed digital applications and analyzed them using the Finite Difference Time Domain(FDTD) method. The new method by conductive dielectric substrates reduces SSN couplings and resonances, significantly, which cause series malfunctions in the modem high-speed digital applications.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.3
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• pp.115-119
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• 2001

This paper presents an efficient and simple method for analyzine maximum simultaneous switching noise (SSN) on ground interconnection networks in CMOS systems. For the derivation of maximum SSN expression, we use ${\alpha}$-power law MOS model and Taylor's series approximation. The accuracy of the proposed method is verified by comparing the results with those of previous researches and HSPICE simulations under the contemporary process parameters and environmental conditions. The proposed method predicts the maximum SSN values more accurately when compared to existing approaches even in most practical cases such that exist some output drivers not in transition.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.1
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• pp.71-80
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• 2004

A new SSN(Simultaneous Switching Noise) model is presented, which can afford to investigate SSN due to integrated circuit package. It is shown that previous SSN models are not accurate enough to be practical since they do not take decoupling capacitor into account. In this paper, a new SSN model including the decoupling capacitor is developed. It is verified that the model has excellent agreement(within $5\%$ error) with HSPICE simulation which employs TSMC 0.18um CMOS process technology.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.6
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• pp.44-50
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• 2002

A novel technique for minimization of simultaneous switching noise is Presented. Dual Layer Power Line (DLPL) structure i:; newly proposed for a possible silicon realization of a mutual inductor, with which an instant large current in the power line is half-divided flowing through two different, but closely coupled, layers in opposite directions. This mutual inductance between two power layers enables us to significantly reduce the switching noise. SPICE simulations show that with a mutual coupling coefficient higher than 0.8, the switching noise reduces by 63% compared to the previously reported solutions. This DLPL technique can also be applied to PCB artworks.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.1141-1144
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• 1998

A new design methodology for the shortchannel CMOS IC-package is presented. It is developed by representing the package inductance with an effective lumpedinductance. The worst case maximum-simultaneous-switching noise (SSN) and gate propagation delay due to the package are modeled in terms of driver geometry, the maximum number of simultaneous switching drivers, and the effective inductance. The SSN variations according to load capacitances are investigated with this model. The package design techniques based on the proposed guidelines are verified by performing HSPICE simulations with the $0.35\mu\textrm{m}$ CMOS model parameters.

• ETRI Journal
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• v.31 no.2
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• pp.201-208
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• 2009

This paper proposes a spiral-shaped power island structure that can effectively suppress simultaneous switching noise (SSN) when the power plane drives high-speed integrated circuits in a small area. In addition, a new technique is presented which greatly improves the resonance peaks in a stopband by utilizing ${\lambda}$/4 open stubs on a conventional periodic electromagnetic bandgap (EBG) power plane. Both proposed structures are simulated numerically and experimentally verified using commercially available 3D electromagnetic field simulation software. The results demonstrate that they achieve better SSN suppression performance than conventional periodic EBG structures.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.8
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• pp.933-939
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• 2008

In this paper, a new composite electromagnetic bandgap(EBG) structure using magnetic materials is proposed for simultaneous switching noise(SSN) suppression in the high-speed digital circuits. The proposed EBG structure has periodic unit cells of square-patches connected by spiral-shaped bridges. The magnetic materials are located on the unit cells of spiral-shaped EBG. The real part of the permeability shifts bandgap to the lower frequency region due to the increased effective inductance. The imaginary part of the permeability has magnetic loss that decreases parasitic LC resonance peaks from between the unit cells. As a result, the proposed structure has the lower cut-off frequency compared with conventional EBG structure and -30 dB SSN suppression bandwidth from 175 MHz to 7.7 GHz. The proposed structure is expected to improve the power integrity and reduce the size of the EBG power plane.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.389-392
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• 1999

It is essential to estimate an effective inductance in a ground plane of muliti-layer IC package system in order to determine the simultaneous switching noise of the package. A new method to estimate the effective ground inductance in multi-layer IC package is presented. With the estimated ground plane inductance values, maximum switching noise variations according to the number of simultaneously switching drivers are investigated by developing a new SSN model. These results are verified by performing HSPICE simulation with the 0.35${\mu}{\textrm}{m}$ CMOS technology.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.51-54
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• 2000

This paper presents an efficient method for estimating maximum simultaneous switching noise(SSN) of ground interconnection networks in CMOS systems. For the derivation of maximum SSN expression we use ａ-power law MOS model and an iterative method to reduce error that may occur due to the assumptions used in the derivation process. The accuracy of the proposed method is verified by comparing the results with those of previous researches and HSPICE simulations under the present process parameters and environmental conditions. Our method predicts the maximum SSN values more accurately as compared to existing approaches even in more practical cases such that there exist some of output drivers not in transition.