디커플링 커패시터가 존재하는 파워/그라운드 라인의 SSN모델링

SSN(Simultaneous Switching Noise) Modeling of Power/Ground Lines with Decoupling Capacitor

  • 배성규 (한양대학교 전자컴퓨터공학) ;
  • 어영선 (한양대학교 전자컴퓨터공학) ;
  • 심종인 (한양대학교 전자컴퓨터공학)
  • Bae Seongkyu (Hanyang University, Dept. of Electrical and Computer Engineering) ;
  • Eo Yungseon (Hanyang University, Dept. of Electrical and Computer Engineering) ;
  • Shim Jongin (Hanyang University, Dept. of Electrical and Computer Engineering)
  • 발행 : 2004.01.01

초록

본 논문에서는 집적회로 패키지에 기인한 노이즈를 해석할 수 있는 새로운 SSN모델을 보인다. 기존의 디커플링 커패시터를 고려하지 않은 회로모델은 과도하게 SSN을 예측한다는 것을 보였으며, 디커플링 커패시터가 포함된 패키지 회로모델을 통하여 새로운 SSN 모델을 제안하였다. 새롭게 제안된 SSN 모델은 0.18um공정(TSMC 0.18um공정)을 사용하여 다양한$\cdot$회로설계 변수(입력상승시간, 패키지 인덕턴스 및 동시 스위칭 개수)의 변화에 따라 HSPICE 시뮬레이션과 정확히($5\%$ 이내에서) 일치한다는 것을 검증하였다.

A new SSN(Simultaneous Switching Noise) model is presented, which can afford to investigate SSN due to integrated circuit package. It is shown that previous SSN models are not accurate enough to be practical since they do not take decoupling capacitor into account. In this paper, a new SSN model including the decoupling capacitor is developed. It is verified that the model has excellent agreement(within $5\%$ error) with HSPICE simulation which employs TSMC 0.18um CMOS process technology.

키워드

참고문헌

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