• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.1
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• pp.48-57
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• 2020

MCU used in applications such as wireless chargers and USB type-C require MTP memory with a small cell size and a small additional process mask. Conventional double poly EEPROM cells are small in size, but additional processing masks of about 3 to 5 sheets are required, and FN tunneling type single poly EEPROM cells have a large cell size. In this paper, a 110nm MTP cell using a vertical PIP capacitor is proposed. The erase operation of the proposed MTP cell uses FN tunneling between FG and EG, and the program operation uses CHEI injection method, which reduces the MTP cell size to 1.09㎛2 by sharing the PW of the MTP cell array. Meanwhile, MTP memory IP required for applications such as USB type-C needs to operate over a wide voltage range of 2.5V to 5.5V. However, the pumping current of the VPP charge pump is the lowest when the VCC voltage is the minimum 2.5V, while the ripple voltage is large when the VCC voltage is 5.5V. Therefore, in this paper, the VPP ripple voltage is reduced to within 0.19V through SPICE simulation because the pumping current is suppressed to 474.6㎂ even when VCC is increased by controlling the number of charge pumps turned on by using the VCC detector circuit.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.1
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• pp.64-71
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• 2020

eFuse OTP memory IP is required to trim the analog circuit of the gate driving chip of the power semiconductor device. Conventional NMOS diode-type eFuse OTP memory cells have a small cell size, but require one more deep N-well (DNW) mask. In this paper, we propose a small PMOS-diode type eFuse OTP memory cell without the need for additional processing in the CMOS process. The proposed PMOS-diode type eFuse OTP memory cell is composed of a PMOS transistor formed in the N-WELL and an eFuse link, which is a memory element and uses a pn junction diode parasitic in the PMOS transistor. A core driving circuit for driving the array of PMOS diode-type eFuse memory cells is proposed, and the SPICE simulation results show that the proposed core circuit can be used to sense post-program resistance of 61㏀. The layout sizes of PMOS-diode type eFuse OTP memory cell and 512b eFuse OTP memory IP designed using 0.13㎛ BCD process are 3.475㎛ × 4.21㎛ (= 14.62975㎛2) and 119.315㎛ × 341.95㎛ (= 0.0408mm2), respectively. After testing at the wafer level, it was confirmed that it was normally programmed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.174-179
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• 2017

We designed the CMOS analog integrate and fire (I&F) neuron circuit for driving memristor based on resistive-switching random access memory (RRAM). And we fabricated the RRAM device that have $HfO_2$ switching layer using atomic layer deposition (ALD). The RRAM device has gradual set and reset characteristics. By spice modeling of the synaptic device, we performed circuit simulation of synaptic device and CMOS neuron circuit. The neuron circuit consists of a current mirror for spatial integration, a capacitor for temporal integration, two inverters for pulse generation, a refractory part, and finally a feedback part for learning of the RRAM. We emulated the spike-timing-dependent-plasticity (STDP) characteristic that is performed automatically by pre-synaptic pulse and feedback signal of the neuron circuit. By STDP characteristics, the synaptic weight, conductance of the RRAM, is changed without additional control circuit.

• Journal of Sensor Science and Technology
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• v.18 no.1
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• pp.77-85
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• 2009

We propose a new image pixel architecture which has OFD(Over Flow Device) node by improving conventional 3TR pixel structure. Newly designed pixel consists of photo diode which is verified with HSPICE simulation, PMOS reset transistor, several NMOS and several PMOS transistors. Photodiode signals from each PMOS and NMOS are detected by Reset PMOS. These output signals give enough chances to detect wide operation coverage because OFD node has overflow photocurrent. According to various light intensity, we analyzed characteristic of the output voltage with a SPICE tool. Proposed pixel output has specific value which can detect possible from $0.1{\mu}W/cm^2$ to $10W/cm^2$ light intensity. It has wide-dynamic range of 160 dB.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.1
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• pp.627-633
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• 2015

We designed of a LDO regulator with a OVP and UVLO protection function for a PMIC. Proposed LDO regulator circuit consists of a BGR reference circuit, an error amplifier and a power transistor and so on. The proposed LDO regulator is designed for low voltage input power protection. Proposed LDO circuit generated fixed 2.5 V from a supply of 3.3V. It was designed with 3.3 V power supply using a $0.35{\mu}m$ CMOS technology. SPICE simulation results showed that the proposed circuit provides 0.713 mV/V line regulation with output 2.5 V ~ 3.9 V and $8.35{\mu}V/mA$ load regulation with load current 0 mA to 40 mA.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.37 no.2
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• pp.43-49
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• 2000

In this paper, the CMOS four-quadrant analog multipliers for low-voltage low-power applications ate presented. The circuit approach is based on the characteristic of the LV(Low-Voltage) composite transistor which is one of the useful analog building blocks. SPICE simulations are carried out to examine the performances of the designed multipliers. Simulation results are obtained by 0.6${\mu}{\textrm}{m}$ CMOS parameters with 2V power supply. The LV composite transistor can easily be extended to perform a four-quadrant multiplication. The multiplier has a linear input range up to $\pm$0.5V with a linearity error of less than 1%. The measured -3㏈ bandwidth is 290MHz and the power dissipation is 373㎼. The proposed multiplier is expected to be suitable for analog signal processing applications such as portable communication equipment, radio receivers, and hand-held movie cameras.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.5
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• pp.13-26
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• 1999

This paper presents a metric that can guide to optimal circuit models for interconnects among various models, given interconnect parameters and operating environment. To get this goal, we categorize interconnects into RC~c1ass and RLC-c1ass model domains based on the quantitative modeling error analysis using total resistance, inductance and capacitance of interconnects as well as operating frequency. RC~c1ass circuit models, which include most on~chip interconnects, can be efficiently analyzed by using the model~order reduction techniques. RLC-c1ass circuit models are constructed using one of three candidates, ILC(Iterative Ladder Circuit) macromodels, MC(Method of Characteristics) macromodels, and state-based convolution method, the selection process of which is based upon the allowable modeling error and electrical parameters of interconnects. We propose the model domain diagram leading to optimal circuit models and the division of model domains has been achieved considering the simulation cost of macromodels under the environmental assumption of the general purpose circuit simulator such as SPICE. The macromodeling method presented in this paper keeps the passivity of the original interconnects and accordingly guarantees the unconditional stability of circuit models.

• The Journal of the Korea institute of electronic communication sciences
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• v.8 no.2
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• pp.207-212
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• 2013

A novel pixel circuit that uses only n-type low-temperature polycrystalline silicon (poly-Si) thin-film transistors (LTPS-TFTs) to compensate the threshold voltage variation of a OLED driving TFT is proposed. The proposed 6T1C pixel circuit consists of 5 switching TFTs, 1 OLED driving TFT and 1 capacitor. When the threshold voltage of driving TFT varies by ${\pm}0.33$ V, Smartspice simulation results show that the maximum error rate of OLED current is 7.05 % and the error rate of anode voltage of OLED is 0.07 % at Vdata = 5.75 V. Thus, the proposed 6T1C pixel circuit can realize uniform output current with high immunity to the threshold voltage variation of poly-Si TFT.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.16 no.1
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• pp.46-56
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• 1991

In this paper, 16word X 8bit Content Addressable and Reentrant Memory(CARM) is described. This device has 4 operation modes(read, write, match, reentrant). The read and write operation of CARM is like that of static RAM, CARM has the reentrant mode operation where the on chip garbage collection is accomplished conditionally. Thus function can be used for high speed matching unit of dynamic data flow computer. And CARM also can encode matching address sequentially according to therir priority. CARM consists of 8 blocks(CAM cell, Sequential Address Encoder(S.A.E). Reentrant operation. Read/Write control circuit, Data/Mask Register, Sense Amplifier, Encoder. Decoder). Designed DARM can be used in data flow computer, pattern, inspection, table look-up, image processing. The simulation is performed using the QUICKSIM logic simulator and Pspice circuit simulator. Having hierarchical structure, the layout was done using the 3{\;}\mu\textrm{m} n well CMOS technology of the ETRI design rule.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.7
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• pp.63-70
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• 2004

This paper describes the link layer and physical layer of the Serial ATA which is the next generation for parallel ATA specification that defines data transfer between PC and peripheral storage devices. The link layer consists of CRC generation/error detection, 8b/10b decoding/encoding, primitive generation/detection block. For the physical layer, it includes CDR(Cock Data Recovery), transmission PLL, serializer/de-serializer. It also includes generation and receipt of OOB(Out-Of-Band) signal, impedance calibration, squelch circuit and comma detection/generation. Additionally, this chip includes TCB(Test Control Block) and BIST(Built-In Selt Test) block to ease debugging and verification. It is fabricated with 0.18${\mu}{\textrm}{m}$ standard CMOS cell library. All the function of the link layer operate properly. For the physical layer, all the blocks operate properly but the data transfer is limited to the 1.28Gbps. This is doe to the affection or parasitic elements and is verified with SPICE simulation.