JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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CMOS Analog Integrate-and-fire Neuron Circuit for Driving Memristor based on RRAM

  • Kwon, Min-Woo (Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University) ;
  • Baek, Myung-Hyun (Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University) ;
  • Park, Jungjin (Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University) ;
  • Kim, Hyungjin (Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University) ;
  • Hwang, Sungmin (Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University) ;
  • Park, Byung-Gook (Inter-university Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University)
  • Received : 2016.07.28
  • Accepted : 2016.12.28
  • Published : 2017.04.30
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Abstract

We designed the CMOS analog integrate and fire (I&F) neuron circuit for driving memristor based on resistive-switching random access memory (RRAM). And we fabricated the RRAM device that have $HfO_2$ switching layer using atomic layer deposition (ALD). The RRAM device has gradual set and reset characteristics. By spice modeling of the synaptic device, we performed circuit simulation of synaptic device and CMOS neuron circuit. The neuron circuit consists of a current mirror for spatial integration, a capacitor for temporal integration, two inverters for pulse generation, a refractory part, and finally a feedback part for learning of the RRAM. We emulated the spike-timing-dependent-plasticity (STDP) characteristic that is performed automatically by pre-synaptic pulse and feedback signal of the neuron circuit. By STDP characteristics, the synaptic weight, conductance of the RRAM, is changed without additional control circuit.

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References

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