The Journal of Korea Institute of Information, Electronics, and Communication Technology (한국정보전자통신기술학회논문지)

Korea Information Electronic Communication Technology (한국정보전자통신기술학회)
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Design of PMOS-Diode Type eFuse OTP Memory IP

PMOS-다이오드 형태의 eFuse OTP IP 설계

  • Kim, Young-Hee (Department of Electronic Engineering, Changwon National University) ;
  • Jin, Hongzhou (Department of Electronic Engineering, Changwon National University) ;
  • Ha, Yoon-Gyu (Department of Electronic Engineering, Changwon National University) ;
  • Ha, Pan-Bong (Department of Electronic Engineering, Changwon National University)
  • Received : 2020.02.10
  • Accepted : 2020.02.20
  • Published : 2020.02.28
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Abstract

eFuse OTP memory IP is required to trim the analog circuit of the gate driving chip of the power semiconductor device. Conventional NMOS diode-type eFuse OTP memory cells have a small cell size, but require one more deep N-well (DNW) mask. In this paper, we propose a small PMOS-diode type eFuse OTP memory cell without the need for additional processing in the CMOS process. The proposed PMOS-diode type eFuse OTP memory cell is composed of a PMOS transistor formed in the N-WELL and an eFuse link, which is a memory element and uses a pn junction diode parasitic in the PMOS transistor. A core driving circuit for driving the array of PMOS diode-type eFuse memory cells is proposed, and the SPICE simulation results show that the proposed core circuit can be used to sense post-program resistance of 61㏀. The layout sizes of PMOS-diode type eFuse OTP memory cell and 512b eFuse OTP memory IP designed using 0.13㎛ BCD process are 3.475㎛ × 4.21㎛ (= 14.62975㎛2) and 119.315㎛ × 341.95㎛ (= 0.0408mm2), respectively. After testing at the wafer level, it was confirmed that it was normally programmed.

전력 반도체 소자의 게이트 구동 칩의 아날로그 회로를 트리밍하기 위해서는 eFuse OTP IP가 필요하다. 기존의 NMOS 다이오드 형태의 eFuse OTP 셀은 셀 사이즈가 작은 반면 DNW(Deep N-Well) 마스크가 한 장 더 필요로 하는 단점이 있다. 본 논문에서는 CMOS 공정에서 추가 공정이 필요 없으면서 셀 사이즈가 작은 PMOS-다이오드 형태의 eFuse OTP 셀을 제안하였다. 본 논문에서 제안된 PMOS-다이오드 형태의 eFuse OTP 셀은 N-WELL 안에 형성된 PMOS 트랜지스터와 기억소자인 eFuse 링크로 구성되어 있으며, PMOS 트랜지스터에서 기생적으로 만들어지는 pn 접합 다이오드를 이용하였다. 그리고 PMOS-다이오드 형태의 eFuse 셀 어레이를 구동하기 위한 코어 구동회로를 제안하였으며, SPICE 모의실험 결과 제안된 코어 회로를 사용하여 61㏀의 post-program 저항을 센싱하였다. 한편 0.13㎛ BCD 공정을 이용하여 설계된 PMOS-다이오드 형태의 eFuse OTP 셀과 512b eFuse OTP IP의 레이아웃 사이즈는 각각 3.475㎛ × 4.21㎛ (=14.62975㎛2)과 119.315㎛ × 341.95㎛ (=0.0408㎟)이며, 웨이퍼 레벨에서 테스트한 결과 정상적으로 프로그램 되는 것을 확인하였다.

Keywords

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