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http://dx.doi.org/10.17661/jkiiect.2020.13.1.48

Design of MTP memory IP using vertical PIP capacitor  

Kim, Young-Hee (Department of Electronic Engineering, Changwon National University)
Cha, Jae-Han (SK hynix system ic INC.)
Jin, Hongzhou (Department of Electronic Engineering, Changwon National University)
Lee, Do-Gyu (Department of Electronic Engineering, Changwon National University)
Ha, Pan-Bong (Department of Electronic Engineering, Changwon National University)
Park, Mu-Hun (Department of Electronic Engineering, Changwon National University)
Publication Information
The Journal of Korea Institute of Information, Electronics, and Communication Technology / v.13, no.1, 2020 , pp. 48-57 More about this Journal
Abstract
MCU used in applications such as wireless chargers and USB type-C require MTP memory with a small cell size and a small additional process mask. Conventional double poly EEPROM cells are small in size, but additional processing masks of about 3 to 5 sheets are required, and FN tunneling type single poly EEPROM cells have a large cell size. In this paper, a 110nm MTP cell using a vertical PIP capacitor is proposed. The erase operation of the proposed MTP cell uses FN tunneling between FG and EG, and the program operation uses CHEI injection method, which reduces the MTP cell size to 1.09㎛2 by sharing the PW of the MTP cell array. Meanwhile, MTP memory IP required for applications such as USB type-C needs to operate over a wide voltage range of 2.5V to 5.5V. However, the pumping current of the VPP charge pump is the lowest when the VCC voltage is the minimum 2.5V, while the ripple voltage is large when the VCC voltage is 5.5V. Therefore, in this paper, the VPP ripple voltage is reduced to within 0.19V through SPICE simulation because the pumping current is suppressed to 474.6㎂ even when VCC is increased by controlling the number of charge pumps turned on by using the VCC detector circuit.
Keywords
MTP IP; VPP charge pump; MTP cell; VCC detector; Ripple voltage;
Citations & Related Records
Times Cited By KSCI : 4  (Citation Analysis)
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