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http://dx.doi.org/10.5369/JSST.2009.18.1.077

OFD(Over Flow Drain) pixel architecture design of the CIS which has wide dynamic range with a CMOS process  

Kim, Jin-Su (School of NANO Engeering, Inje University)
Kwon, Bo-Min (School of NANO Engeering, Inje University)
Jung, Jin-Woo (School of NANO Engeering, Inje University)
Park, Ju-Hong (School of NANO Engeering, Inje University)
Kim, Jong-Min (Dongbu Hitek. Device Engineering Team)
Lee, Je-Won (School of NANO Engeering, Inje University)
Kim, Nam-Tae (Department of Electronics and Intelligent Robotics Engineering, Inje University)
Song, Han-Jung (School of NANO Engeering, Inje University)
Publication Information
Journal of Sensor Science and Technology / v.18, no.1, 2009 , pp. 77-85 More about this Journal
Abstract
We propose a new image pixel architecture which has OFD(Over Flow Device) node by improving conventional 3TR pixel structure. Newly designed pixel consists of photo diode which is verified with HSPICE simulation, PMOS reset transistor, several NMOS and several PMOS transistors. Photodiode signals from each PMOS and NMOS are detected by Reset PMOS. These output signals give enough chances to detect wide operation coverage because OFD node has overflow photocurrent. According to various light intensity, we analyzed characteristic of the output voltage with a SPICE tool. Proposed pixel output has specific value which can detect possible from $0.1{\mu}W/cm^2$ to $10W/cm^2$ light intensity. It has wide-dynamic range of 160 dB.
Keywords
OFD(over flow drain); PMOS reset MOS; photodiode; readout circuit;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
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