• Bulletin of the Korean Mathematical Society
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• v.34 no.2
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• pp.211-223
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• 1997

Lehmann [13] introduced the concept of positive(negative) dependence together with some other dependence concepts. Since then, a great numerous multivariate inequalities have been obtained. For a references of available results, see Karlin and Rinott [12], Ebrahimi and Ghosh [8] and Sampson [14]. Whereas a number of dependence notions exist for multivariate processes (see Friday [10]), recently, Ebrahimi [7] introduced some new dependence concepts of the hitting times of stochastic processes.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.3
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• pp.229-235
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• 2001

Uncooled pyroelectric thin-film (Ba,Sr)TiO$_3$ infrared detectors thermally isolated from Si-substrate by Si$_3$N$_4$/SiO$_2$/Si$_3$N$_4$-membrane have been fabricated, and figures of merit for detectors were examined. The detector at $25^{\circ}C$ in air showed relatively high voltage responsivity of about 168.8 V/W and low specific detectivity of about 2.6$\times$10$^4$cm.Hz$^{1}$2//W at 1 Hz-chopping frequency because of very small signal-to-noise voltage ratio. It could be found that both thermal noise voltage and thermal time constant of the detector were very large by analyzing dependences of output waveforms on chopping frequency and temperature.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.6 s.348
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• pp.18-22
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• 2006

The inspection of surface properties under n-octadecyltrichlorosilane treated $SiO_2$ film was carried out by current-voltage characteristic and the scanning electron microscope. The voltage at zero current in low electric field is the lowest at 0.3 % OTS treated $SiO_2$ film with hybrid type. $SiO_2$ films changed from inorganic to hybrid or organic properties according to the increase of OTS content. OTS treated $SiO_2$ films with hybrid properties decreased the leakage currents, and the grain size of pentacene deposited sample was also the most small at the hybrid properties. The perpendicular generation of pentacene molecular was related with the surface of insulators. The surface with hybrid properties decreased the grain size, but that with inorganic or organic properties increased the grain size.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.11 no.5
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• pp.58-64
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• 2002

Mirror surface finish of Si-wafers has been achieved by rotary in-feed machining with cup-type wheels in ELID grinding. But the diameter of the workpiece is limited with the diameter of the grinding wheel in the in-feed machining method. In this study, some finding experiments by the rotary surface grinding machine with straight type wheels were conducted, by which the possible grinding area of the workpiece is independent of the diameter of the wheels. For the purpose of investigating the grinding characteristics of large scale diametrical silicon wafer, grinding conditions such as rotation speed of grinding wheels and revolution of workpieces are varied, and grinding machine used in this experiment is rotary type surface grinding m/c equipment with an ELID unit. The surface ground using the SD8000 wheels showed that mirror like surface roughness can be attained near 2~6 nm in Ra.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.946-949
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• 2001

Mirror surface finish of Si-wafers has been achieved by rotary in-feed machining with cup-type wheels in ELID grinding. But the diameter of the workpiece is limited with the diameter of the grinding wheel in the in-feed machining method. In this study, some grinding experiments by the rotary surface grinding machine with straight type wheels were conducted, by which the possible grinding area of the workpiece is independent of the diameter of the wheels. For the purpose of investigating the grinding characteristics of large scale diametral silicon wafer, grinding conditions such as rotation speed of grinding wheels and revolution of workpiece are varied, and grinding machine used in this experiment is rotary type surface grinding m/c equipped with an ELID unit. The surface ground using the SD8000 wheels showed that mirror like surface roughness can be attained near 2~6nm in Ra.

• Journal of the Korean Society of Food Science and Nutrition
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• v.42 no.12
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• pp.1940-1948
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• 2013

This study is conducted to investigate the antioxidative effect of oyster hydrolysates in the serum and liver of SD-rats through the determination of lipid content, production of free radicals and antioxidant enzyme activities. Two different hydrolysates, Protamex-treated and Neutrase-treated hydrolysate with the cross-linking of protein by transglutaminase (TGPN group) and without (PN group), were fed for 6 weeks. TGPN hydrolysate in serum and liver significantly decreased the total cholesterol in the range of 26.1% to 28.9%, and triglyceride in the liver of up to 6.3%. Superoxide radical in the serum and lipid peroxide radical in the liver were significantly decreased in SD-rats fed 200 mg TGPN hydrolysate. Superoxide dismutase activity was significantly decreased in the liver of SD-rats. These results indicate that TGPN hydrolysate could scavenge the superoxide and hydroxyl radicals, and reduce the superoxide dismutase and catalase activities. The TGPN is also protected the oxidation of protein by the free radicals.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.5
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• pp.8-14
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• 2007

In this paper, $HfO_2$/Hf stacked film has been applied as the gate dielectric in MOS devices. The $HfO_2$ thin film was deposited on p-type (100) silicon wafers by atomic layer deposition (ALD) using TEMAHf and $O_3$ as precursors. Prior to the deposition of the $HfO_2$ film, a thin Hf metal layer was deposited as an intermediate layer. Round-type MOS capacitors have been fabricated on Si substrates with 2000${\AA}$-thick Al or Pt top electrode. The prepared film showed the stoichiometric components. At the $HfO_2$/Si interface, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. It seems that the intermediate Hf metal layer has a benefit for the enhancement of electric characteristics of gate dielectric in $HfO_2$/Si structure.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.11
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• pp.20-25
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• 2007

In this paper, It was reported the dielectric constant in organic inorganic hybrid silica material such as SiOC film modeling of bond structure by annealing in organic properties. The organic inorganic hybrid silica material were deposited using bis-trimethylsilymethane (BTMSM, [(CH3)3Si]2CH2) and oxygen gas precursor by a plasma chemical vapor deposition (CVD). The organic inorganic hybrid silica material have three types according to the deposition condition. The dielectric constant of the films were performed MIS(Al/Si-O-C film/p-Si) structure. The C 1s spectra in organin inorganic silica materials with the flow rate ratio of O2/BTMSM=1.5 was organometallic carbon with the peak 282.9 eV by XPS. It means that organometallic carbon component is the cross-link bonding structure with good stability. The dielectric constant was the lowest at annealed films with cross-link bonding structure.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.6
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• pp.22-27
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• 2008

Analytical models for breakdown voltage and specific on-resistance of 4H-silicon carbide Schottky diodes have been derived successfully by extracting an effective ionization coefficient $\gamma$ from ionization coefficients $\alpha$ and $\beta$ for electron and hole in 4H-SiC. The breakdown voltages extracted from our analytical model are compared with experimental results. The specific on-resistance as a function of doping concentration is also compared with the ones reported previously. Good fits with the experimental results are found for the breakdown voltage within 10% in error for the doping concentration in the range of about $10^{15}{\sim}10^{18}\;cm^{-3}$. The analytical results show good agreement with the experimental data for the specific on-resistance in the range of $3{\times}10^{15}{\sim}2{\times}10^{16}\;cm^{-3}$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.11
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• pp.50-58
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• 2000

A Mach-Zehnder type $Ti:LiNbO_3$ optical modulator with a grooved $SiO_2$ buffer layer, was evaluated in terms of an electrode structure. The finite element method was performed to find out the optinum design parameters of electrodes. characteristic impedance ($Z_o$), MW effective index ($N_{eff}$) and attenuation constant ($a_o$)of fabricated traveling-wave electrodes were measured and compared with those obtained by the simulation expectation. For an optical modulator with 11${\mu}m$thick electrodes and a grooved $SiO_2$ buffer layer, the 3dB bandwidth based on the RF measurement results turned out to be 18GHz.