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Annealing effects of organic inorganic hybrid silica material with C-H hydrogen bonds  

Oh, Teresa (School of Electronics and Information Engineering, Cheongju University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.44, no.11, 2007 , pp. 20-25 More about this Journal
Abstract
In this paper, It was reported the dielectric constant in organic inorganic hybrid silica material such as SiOC film modeling of bond structure by annealing in organic properties. The organic inorganic hybrid silica material were deposited using bis-trimethylsilymethane (BTMSM, [(CH3)3Si]2CH2) and oxygen gas precursor by a plasma chemical vapor deposition (CVD). The organic inorganic hybrid silica material have three types according to the deposition condition. The dielectric constant of the films were performed MIS(Al/Si-O-C film/p-Si) structure. The C 1s spectra in organin inorganic silica materials with the flow rate ratio of O2/BTMSM=1.5 was organometallic carbon with the peak 282.9 eV by XPS. It means that organometallic carbon component is the cross-link bonding structure with good stability. The dielectric constant was the lowest at annealed films with cross-link bonding structure.
Keywords
SiOC film; low-k materials; C-H bond elongation; C-H bond condensation; chemical shift;
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Times Cited By KSCI : 1  (Citation Analysis)
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