Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

Annealing effects of organic inorganic hybrid silica material with C-H hydrogen bonds

C-H 수소결합을 갖는 유무기 하이브리드 물질에서의 열처리 효과

  • Oh, Teresa (School of Electronics and Information Engineering, Cheongju University)
  • Published : 2007.11.25
Download PDF
⟨ Previous Next ⟩

Abstract

In this paper, It was reported the dielectric constant in organic inorganic hybrid silica material such as SiOC film modeling of bond structure by annealing in organic properties. The organic inorganic hybrid silica material were deposited using bis-trimethylsilymethane (BTMSM, [(CH3)3Si]2CH2) and oxygen gas precursor by a plasma chemical vapor deposition (CVD). The organic inorganic hybrid silica material have three types according to the deposition condition. The dielectric constant of the films were performed MIS(Al/Si-O-C film/p-Si) structure. The C 1s spectra in organin inorganic silica materials with the flow rate ratio of O2/BTMSM=1.5 was organometallic carbon with the peak 282.9 eV by XPS. It means that organometallic carbon component is the cross-link bonding structure with good stability. The dielectric constant was the lowest at annealed films with cross-link bonding structure.

SiOC 박막과 같은 유무기 하이브리드 실리카 물질에서의 열처리효과에 의한 결합구조의 변화와 유전상수에 관하여 연구하였다. 유무기 하이브리드 실리카 물질은 BTMSM과 산소의 혼합가스를 이용한 CVD방법에 의하여 증착되었다. 유무기 하이브리드 실리카 물질은 증착조건에 따라 3가지 유형으로 분류되었으며, 유전상수는 MIS 구조에 의하여 조사되었다. XPS 분석에 의하여 C 1s 스펙트라는 O2/BTMSM=1.5의 유량비를 갖는 박막에서 282.9 eV의 organometallic carbon 반응을 보여주는 피크를 나타내었다. organometallic carbon반응의 결과는 안정성 있는 크로스 링크 결합구조를 만들어내며, 하이브리드 특성을 갖는 이 박막에서 열처리 후 유전상수는 가장 낮았다.

Keywords

References

  1. Teresa Oh, Kwang-Man Lee, Sung-Teak Ko, Kyung Sik Kim, Khi-Jung Ahn and Chi Kyu Choi, 'Bonding Structure of the Cross-link in Organosilicate Films Using $O_2$/BTMSM Precursors,' Jpn. J. Appl. Phys. 42, pp.1517-1520, 2003 https://doi.org/10.1143/JJAP.42.1517
  2. A. Grill and D. A. Neumayer, 'Structure of low dielectric constant to extreme low dielectric constant SIOCH films: Fourier transform infrared spectroscopy characterization,' J. Appl. Phys. Vol. 94, pp. 6697-6707, 2003 https://doi.org/10.1063/1.1618358
  3. Saravanapriyan Sriraman, Eray S. Aydil, and Dimitrios Maroudas, 'Visualizing the evolution of surface bond straining during radical-surface interactions in plasma deposition processes,' IEEE TRANSACTION ON PLASMA SCIENCE, VOL, 30, pp. 112-113, 2002 https://doi.org/10.1109/TPS.2002.1003949
  4. 오데레사 '탄소밀도의 변화가 SiOC 박막의 결합 구조에 미치는 영향,' 대한전자공학회, Vol. 43, pp. 322-327, May. 2006
  5. Doosik Kim, and Demetre J. Economou, 'Energy and angular distributions of ions and neutrals extracted from a slot in contact with a high-density plasma,' IEEE TRANSACTION ON PLASMA SCIENCE, VOL, 30, pp. 126-127, 2002 https://doi.org/10.1109/TPS.2002.1003956
  6. Kostya Ostrikov, E. Tsakadze, Jiang Ning, Z. Tsakadze, Long Jidong, R. Storer, and Shuyan Xu, 'Dynamics of mode transitions in inductively-coupled plasmas,' IEEE TRANSACTION ON PLASMA SCIENCE, VOL, 30, pp. 128-129, 2002 https://doi.org/10.1109/TPS.2002.1003957
  7. Y. Miyoshi, Z. Lj. Petrovic, and T. Makabe, 'Transition between capacitive and inductive mode in inductively coupled plasma observed by emission computerized tomography,' IEEE TRANSACTION ON PLASMA SCIENCE, VOL, 30, pp. 130-131, 2002 https://doi.org/10.1109/TPS.2002.1003958
  8. A. Grill, 'Amorphous carbon based materials as the interconnect dielectric in ULSI chips' Diamond and Related Materials. pp. 234-239, 2001
  9. G. Galli and R. M. Martin, 'Structural and electronic properties of amorphous carbon,' Phys. Rev. Lett. Vol. 62, No. 5, 1989, pp. 555-558, 1999 https://doi.org/10.1103/PhysRevLett.62.555
  10. M. A. Tamor, C. H. Wu, 1990, 'Graphitic network models of diamondlike carbon,' J.Appl. Phys. 67(2), pp. 1007-1012, 1990 https://doi.org/10.1063/1.345808
  11. Jaeyeong Heo, Hyeong Joon Kim, Jeong Hoon Han and Jong Won Shon, 'The structures of low dielectric constant SiOC thin films prepared by direct and remote plasma enhanced chemical vapor deposition,' Thin Solid Films, Vol. 515, pp. 5035-5039, 2007 https://doi.org/10.1016/j.tsf.2006.10.095